This version: Jul. 1998 Previous version: Jan. 1998 E2Q0015-38-71 ¡ electronic components KGF1175B/1175 ¡ electronic components KGF1175B/1175 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the Lband, that features low noise and low current operation. The KGF1175B specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required. Because of the one-input dual gate configuration, low noise, and low operating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy phones. The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties. Although possessing S Parameters that are slightly different from those of the KGF1175B, the KGF1175 meets the specifications for the KGF1175B, even with the same matching circuits as those of the KGF1175B. FEATURES • Low current operation: 2.5 mA (max.) • High output power: 3 dBm (min.) • Low noise: 2 dB (max.) • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 Lead frame material 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more (Unit: mm) Note: Ask our sales department for detailed requirements of the KGF1175. 1/8 ¡ electronic components KGF1175B/1175 MARKING (4) (3) R X X (1) (2) NUMERICAL NUMERICAL LOT NUMBER PRODUCT TYPE (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D(3) G(1) S(2) GND(4) 2/8 ¡ electronic components KGF1175B/1175 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 7.0 Gate-source voltage VGS Ta = 25°C V –3.0 0.4 Drain current IDS Ta = 25°C mA — 60 Total power dissipation Ptot Ta = 25°C mW — 200 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Symbol Unit Min. Typ. Max. IGSS VGS = –3 V mA — — 12 IGDO VGD = –8 V mA — — 60 VDS = 3 V, VGS = –2.5 V mA — — 120 IDSS VDS = 3 V, VGS = 0 V mA 15 — — ID (*1), PIN = –20 dBm mA — — 2.5 VDS = 3 V, IDS = 120 mA V –2.0 — –1.0 VDS = 3 V, IDS = 1.5 mA mS 8 — — (*1) dB — — 2.0 IDS(off) VGS(off) gm Noise figure F Linear gain Condition GLIN (*1), PIN = –20 dBm dB 12.0 — — Output power PO (*1), PIN = –3 dBm dBm 3.0 — — Third-order intercept point IP3 (*1), f2 = 851 MHz dBm — 11 — *1 Self-bias condition: VDD = 5.0 V±0.25 V, VG = 0 V, f = 850 MHz 3/8 ¡ electronic components KGF1175B/1175 RF CHARACTERISTICS 4/8 ¡ electronic components KGF1175B/1175 5/8 ¡ electronic components KGF1175B/1175 Typical S Parameters of KGF1175B VDD = 5 V, ID = 1.69 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 1.008 –11.02 1.019 171.36 0.007 83.61 0.958 –6.74 600.0 1.007 –13.24 1.025 167.48 0.008 83.43 0.957 –7.82 700.0 1.006 –15.37 1.025 164.09 0.009 75.44 0.954 –9.11 800.0 1.001 –17.68 1.034 160.38 0.009 85.48 0.956 –10.38 900.0 0.998 –19.88 1.033 157.50 0.010 82.09 0.953 –11.83 1000.0 0.996 –22.19 1.044 153.96 0.011 80.33 0.955 –12.91 1100.0 0.991 –24.38 1.038 150.84 0.012 75.82 0.953 –14.06 1200.0 0.986 –26.69 1.049 147.93 0.011 81.04 0.951 –15.33 1300.0 0.983 –28.89 1.050 145.49 0.012 83.52 0.951 –16.72 1400.0 0.976 –31.10 1.057 142.31 0.011 77.92 0.946 –17.78 1500.0 0.972 –33.47 1.071 139.27 0.010 91.04 0.947 –18.96 1600.0 0.966 –35.78 1.077 136.44 0.010 91.33 0.947 –20.19 1700.0 0.958 –38.00 1.078 133.75 0.009 103.17 0.946 –21.30 1800.0 0.949 –40.29 1.090 130.07 0.009 108.28 0.945 –22.67 1900.0 0.941 –42.69 1.098 127.08 0.010 126.29 0.946 –23.46 2000.0 0.931 –45.01 1.114 124.55 0.012 141.00 0.938 –24.72 2100.0 0.923 –47.22 1.130 121.79 0.013 152.85 0.941 –25.74 2200.0 0.915 –49.59 1.123 117.89 0.016 161.34 0.937 –26.78 2300.0 0.902 –51.85 1.130 114.85 0.022 164.46 0.937 –27.93 2400.0 0.888 –54.08 1.139 111.93 0.028 169.99 0.937 –28.74 2500.0 0.875 –56.60 1.142 108.72 0.033 173.26 0.936 –30.14 2600.0 0.859 –58.75 1.137 105.39 0.040 172.77 0.938 –30.84 2700.0 0.844 –61.15 1.158 102.27 0.047 174.63 0.936 –31.58 2800.0 0.828 –63.45 1.160 99.38 0.057 172.91 0.939 –32.64 2900.0 0.813 –65.50 1.166 95.89 0.067 171.69 0.938 –33.47 3000.0 0.791 –67.60 1.168 92.62 0.078 170.94 0.938 –34.37 6/8 ¡ electronic components KGF1175B/1175 Typical S Parameters of KGF1175B VDD = 5 V, ID = 1.69 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 ¡ electronic components KGF1175B/1175 Test Circuit and Bias Configuration for KGF1175B at 850 MHz CC T1 T2 IN (1) KGF (3) T4 CC T5 OUT 1175B T3 RG C1 CB (4) T7 T6 C2 RFC VDD CB CF T1: Z0 = 110 W, E = 25 deg T4: Z0 = 110 W, E = 7 deg T2: Z0 = 110 W, E = 27 deg T5: Z0 = 110 W, E = 35 deg T3 : Z0 = 65 W, E = 16 deg T6: Z0 = 65 W, E = 16 deg T7 : Z0 = 110 W, E = 6 deg C1 = 0.10 pF, C2 = 1.05 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 200 nH, RG = 1000 W 8/8