This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output power, and high gain. The KGF1284 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 21.5 dBm), high gain, and plastic package, the KGF1284 is ideal as a transmitter-driver amplifier for personal handy phones, such as digital keying cordless phones. FEATURES • Specifications guaranteed to a fixed matching circuit for 3.4 V, 1.9 GHz • High output power: 21.5 dBm (min.) at 1.9 GHz • High efficiency: 50% (typ.) at 1.9 GHz • High linear gain: 12 dB (typ.) at 1.9 GHz • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.5±0.1 4±0.2 1±0.2 2.5±0.1 1.6 +0.15 –0.10 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.39±0.05 0.4 +0.08 –0.05 (Unit: mm) Package material Lead frame material Epoxy resin Pin treatment Cu Solder plating Solder plate thickness 5 mm or more 1/7 ¡ electronic components KGF1284 MARKING (1) D2 PRODUCT TYPE XX LOT NUMBER (NUMERICAL or ALPHABETICAL) (2) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1284 ABSOLUTE MAXIMUM RATINGS Item Symbol Condition Unit Min. Max. Drain-source voltage VDS Ta = 25°C Gate-source voltage VGS Ta = 25°C V — 7.0 V –5.0 0.4 Drain current IDS Ta = 25°C A — 0.8 Total power dissipation Ptot Ta = Tc = 25°C W — 2.5 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 Condition Unit Min. Typ. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Max. Gate-source leakage current IGSS VGS = –5 V mA — — 50 Gate-drain leakage current IGDO VGD = –12 V mA — — 150 Drain-source leakage current Drain current Gate-source cut-off voltage Output power IDS(off) VDS = 7 V, VGS = –5 V mA — — 500 IDSS VDS = 1.5 V, VGS = 0 V mA 450 — — VGS(off) PO VDS = 3 V, IDS = 1.4 mA (*1), PIN = 12 dBm V –3.0 — –2.0 dBm 21.5 22.5 — hD (*1), PIN = 12 dBm % 45 50 — Linear gain GLIN (*1), PIN = –5 dBm dB — 12.0 — Thermal resistance Rth Channel to case °C/W — 35 — Drain efficiency *1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 70 mA 3/7 ¡ electronic components KGF1284 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1284 Typical S Parameters VDS = 3.4 V, VGS = –1.50 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.929 –78.89 5.276 128.00 0.042 51.45 0.267 –148.33 600.0 0.912 –90.54 5.192 120.39 0.047 46.56 0.290 –151.44 700.0 0.898 –100.54 4.906 113.48 0.051 42.16 0.309 –153.97 800.0 0.883 –109.32 4.758 107.25 0.055 38.55 0.323 –156.56 900.0 0.876 –117.13 4.432 102.09 0.057 35.18 0.335 –158.61 1000.0 0.866 –123.86 4.255 96.87 0.060 32.38 0.343 –160.77 1100.0 0.859 –130.11 4.020 92.12 0.062 30.00 0.350 –162.66 1200.0 0.851 –135.65 3.790 87.84 0.064 27.73 0.355 –164.65 1300.0 0.844 –140.78 3.588 83.54 0.065 25.74 0.360 –166.30 1400.0 0.838 –145.60 3.381 79.70 0.067 23.56 0.363 –168.00 1500.0 0.832 –149.99 3.226 75.89 0.069 22.15 0.364 –169.53 1600.0 0.825 –154.26 3.066 72.32 0.070 20.26 0.366 –171.09 1700.0 0.819 –158.20 2.908 68.85 0.072 18.89 0.366 –172.68 1800.0 0.812 –161.99 2.809 65.26 0.073 17.33 0.369 –174.12 1900.0 0.806 –165.60 2.666 61.68 0.074 16.01 0.366 –175.62 2000.0 0.799 –169.02 2.570 58.72 0.076 14.72 0.369 –177.03 2100.0 0.793 –172.66 2.470 54.67 0.077 13.41 0.366 –178.53 2200.0 0.785 –175.81 2.367 52.14 0.078 12.04 0.367 179.93 2300.0 0.778 –178.99 2.285 48.53 0.080 10.71 0.365 178.65 2400.0 0.771 177.76 2.194 45.78 0.080 9.42 0.365 177.06 2500.0 0.764 174.95 2.129 42.86 0.082 8.56 0.364 175.54 2600.0 0.758 171.70 2.067 39.50 0.082 7.12 0.361 174.11 2700.0 0.750 168.79 1.991 36.47 0.085 5.91 0.360 172.44 2800.0 0.742 165.98 1.932 33.51 0.085 4.43 0.359 171.33 2900.0 0.736 163.16 1.854 30.44 0.087 2.92 0.358 169.80 3000.0 0.733 160.53 1.808 27.91 0.087 1.82 0.360 168.19 5/7 ¡ electronic components KGF1284 Typical S Parameters VDS = 3.4 V, VGS = –1.50 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1284 Test Circuit and Bias Configuration for KGF1284 at 1.9 GHz VGS CF RFC CB T1 CF CB T2 T3 (1) (3) T4 T5 T6 VDS RFC OUT IN CC C1 (2) CC C2 f = 1.9 GHz T1: Z0 = 80 W, E = 53 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 32 deg T5: Z0 = 12 W, E = 32 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 50 W, E = 54 deg C1 = 1.0 pF, C2 = 2.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH 7/7