This version: Jul. 1998 Previous version: Jan. 1998 E2Q0026-38-72 ¡ electronic components ¡ electronic components KGF1283 KGF1283 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency, high output power, and high gain. The KGF1283 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 26.5 dBm), high gain, and plastic package, the KGF1283 is ideal as a transmitter-driver amplifier for personal handy phones. FEATURES • High output power: 26.5 dBm (min.) • High efficiency: 60% (typ.) • High linear gain: 17 dB (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.5±0.1 4±0.2 1±0.2 2.5±0.1 1.6 +0.15 –0.10 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.39±0.05 0.4 +0.08 –0.05 (Unit: mm) Package material Lead frame material Epoxy resin Pin treatment Cu Solder plating Solder plate thickness 5 mm or more 1/7 ¡ electronic components KGF1283 MARKING (1) D1 PRODUCT TYPE XX LOT NUMBER (NUMERICAL or ALPHABETICAL) (2) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1283 ABSOLUTE MAXIMUM RATINGS Item Symbol Condition Unit Min. Max. Drain-source voltage VDS Ta = 25°C V — 10 Gate-source voltage VGS Ta = 25°C V –6.0 0.4 Drain current IDS Ta = 25°C A — 0.8 Total power dissipation Ptot Ta = Tc = 25°C W — 2.5 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Condition Unit Min. Typ. Max. Gate-source leakage current IGSS VGS = –6 V mA — — 50 Gate-drain leakage current IGDO VGD = –16 V mA — — 150 Drain-source leakage current Drain current Gate-source cut-off voltage Output power IDS(off) VDS = 10 V, VGS = –6 V mA — — 500 IDSS VDS = 1.5 V, VGS = 0 V mA 450 — — VGS(off) PO VDS = 3 V, IDS = 1.4 mA (*1), PIN = 15 dBm V –3.0 — –2.0 dBm 26.5 27.5 — hD (*1), PIN = 15 dBm % 50 60 — Linear gain GLIN (*1), PIN = –5 dBm dB — 17.0 — Thermal resistance Rth Channel to case °C/W — 35 — Drain efficiency *1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 70 mA 3/7 ¡ electronic components KGF1283 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1283 Typical S Parameters VDS = 5.8 V, VGS = –1.71 V, IDS = 70 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.928 –75.55 6.052 128.22 0.041 53.15 0.216 –140.73 600.0 0.913 –86.65 5.575 121.14 0.045 48.09 0.238 –143.48 700.0 0.902 –96.40 5.152 114.59 0.049 43.65 0.256 –146.18 800.0 0.892 –105.12 4.788 108.53 0.053 40.10 0.271 –148.79 900.0 0.882 –112.97 4.454 103.41 0.056 36.55 0.283 –150.77 1000.0 0.876 –119.78 4.153 98.19 0.058 33.64 0.292 –153.12 1100.0 0.868 –126.19 3.895 93.46 0.060 31.03 0.299 –154.81 1200.0 0.861 –131.83 3.657 89.01 0.063 28.58 0.306 –156.91 1300.0 0.854 –137.11 3.464 84.72 0.064 26.57 0.311 –158.46 1400.0 0.846 –141.95 3.268 80.66 0.066 24.29 0.315 –159.96 1500.0 0.842 –146.44 3.107 76.72 0.067 22.61 0.318 –161.51 1600.0 0.835 –150.81 2.959 73.04 0.069 20.63 0.320 –163.03 1700.0 0.832 –155.00 2.816 69.53 0.070 19.19 0.323 –164.39 1800.0 0.819 –158.72 2.701 65.53 0.071 17.77 0.325 –165.64 1900.0 0.818 –162.30 2.571 62.36 0.073 15.95 0.324 –167.18 2000.0 0.808 –166.12 2.487 58.83 0.073 15.15 0.327 –168.37 2100.0 0.803 –169.41 2.375 55.18 0.075 13.37 0.326 –169.82 2200.0 0.795 –172.93 2.297 52.11 0.076 12.15 0.328 –171.17 2300.0 0.786 –176.05 2.200 48.43 0.077 10.98 0.327 –172.30 2400.0 0.781 –179.23 2.119 45.83 0.078 9.29 0.328 –173.76 2500.0 0.773 177.57 2.061 42.29 0.079 8.86 0.328 –175.26 2600.0 0.766 174.58 1.982 39.28 0.080 7.26 0.327 –176.65 2700.0 0.760 171.51 1.924 36.07 0.082 5.97 0.326 –177.97 2800.0 0.751 168.56 1.861 32.88 0.082 4.70 0.327 –179.20 2900.0 0.745 165.87 1.785 30.00 0.084 2.97 0.328 179.36 3000.0 0.742 162.94 1.742 27.08 0.084 2.19 0.329 177.71 5/7 ¡ electronic components KGF1283 Typical S Parameters VDS = 5.8 V, VGS = –1.71 V, IDS = 70 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1283 Test Circuit and Bias Configuration for KGF1283 at 850 MHz VGS CF RFC CB T1 CF CB T2 (1) (3) T3 T4 VDS RFC OUT IN CC C1 C2 f = 850 MHz T1: Z0 = 80 W, E = 7.3 deg T2: Z0 = 80 W, E = 36.6 deg (2) CC C3 T3: Z0 = 50 W, E = 27.0 deg T4: Z0 = 50 W, E = 18.0 deg C1 = 1.0 pF, C2 = 5.0 pF, C3 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH 7/7