This version: Jul. 1998 Previous version: Jan. 1998 E2Q0019-38-71 ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that features low voltage operation, low current operation, low noise, and low distortion. The KGF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high 3rd-order intercept point, even at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties. FEATURES • Low voltage and low current operation: 3 V, 5 mA (max.) • Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz • Low noise figure: 1.3 dB (typ.) at 1.9 GHz • High linear gain: 12.5 dB (typ.) at 1.9 GHz • High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz • Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 Lead frame material 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more (Unit: mm) 1/8 ¡ electronic components KGF1522 MARKING (4) (3) F X X (1) (2) NUMERICAL LOT NUMBER ALPHABETICAL PRODUCT TYPE (1) Gate (2) Source (3) Drain (4) GND CIRCUIT D(3) G(1) S(2) GND(4) 2/8 ¡ electronic components KGF1522 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 4.0 Gate-source voltage VGS Ta = 25°C V –3.0 0.4 Drain current IDS Ta = 25°C mA — 50 Total power dissipation Ptot Ta = 25°C mW — 200 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Symbol Unit Min. Typ. Max. IGSS VGS = –3 V Condition mA — — 30 IGDO VGD = –6 V mA — — 30 IDS(off) VDS = 3 V, VGS = –2 V mA — — 30 IDSS VDS = 3 V, VGS = 0 V mA 15 25 — (*1), PIN = –20 dBm mA — 3.5 5.0 V –1.4 — –0.6 VDS = 3 V, IDS = 4 mA mS 20 25 — (*1) dB — 1.3 2.0 ID VGS(off) gm VDS = 3 V, IDS = 100 mA Noise figure F Linear gain GLIN (*1), PIN = –20 dBm dB 11.0 12.5 — Output power PO1 (*1) dBm 2.0 4.5 — Third-order intercept point IP3 (*2), f2 = 1.901 GHz dBm — 17 — *1 Self-bias condition: VDD = 3 V ± 0.3 V, VG = 0 V, f = 1.9 GHz 3/8 ¡ electronic components KGF1522 RF CHARACTERISTICS 4/8 ¡ electronic components KGF1522 5/8 ¡ electronic components KGF1522 Typical S Parameters VDD = 3 V, ID = 4.24 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 1.006 –8.82 1.793 177.92 0.011 76.78 0.906 –7.05 600.0 1.002 –10.55 1.805 173.54 0.013 75.78 0.903 –8.02 700.0 0.999 –12.36 1.818 169.53 0.014 74.39 0.900 –9.13 800.0 0.995 –14.14 1.824 166.14 0.015 75.17 0.897 –10.06 900.0 0.991 –15.89 1.821 162.83 0.017 75.08 0.895 –11.09 1000.0 0.985 –17.61 1.827 159.59 0.018 76.01 0.892 –12.05 1100.0 0.980 –19.40 1.826 156.50 0.019 73.48 0.889 –13.13 1200.0 0.974 –21.12 1.931 153.70 0.021 73.99 0.886 –14.05 1300.0 0.967 –22.86 1.832 150.73 0.022 73.53 0.884 –15.12 1400.0 0.960 –24.52 1.829 148.07 0.023 72.19 0.880 –16.05 1500.0 0.952 –26.28 1.833 144.82 0.024 74.66 0.877 –17.02 1600.0 0.944 –27.92 1.839 142.34 0.024 74.26 0.875 –17.94 1700.0 0.934 –29.58 1.832 139.43 0.025 74.34 0.869 –18.76 1800.0 0.925 –31.20 1.834 136.44 0.026 75.49 0.866 –19.81 1900.0 0.915 –32.87 1.837 133.56 0.026 77.61 0.863 –20.67 2000.0 0.904 –34.49 1.842 130.98 0.026 79.54 0.858 –21.59 2100.0 0.893 –36.11 1.835 128.16 0.027 84.41 0.855 –22.52 2200.0 0.880 –37.56 1.828 125.22 0.029 84.29 0.852 –23.35 2300.0 0.868 –38.93 1.821 122.28 0.029 85.27 0.846 –24.15 2400.0 0.856 –40.42 1.827 119.70 0.030 86.94 0.843 –24.87 2500.0 0.843 –41.76 1.807 116.85 0.031 90.44 0.838 –25.57 2600.0 0.828 –43.17 1.810 113.86 0.032 94.40 0.835 –26.44 2700.0 0.815 –44.32 1.786 111.17 0.034 97.95 0.830 –27.12 2800.0 0.801 –45.55 1.793 108.30 0.037 101.31 0.826 –27.83 2900.0 0.788 –46.68 1.767 105.50 0.039 105.31 0.825 –28.51 3000.0 0.773 –47.72 1.767 102.69 0.041 108.19 0.823 –29.01 6/8 ¡ electronic components KGF1522 Typical S Parameters VDD = 3 V, ID = 4.24 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 ¡ electronic components KGF1522 Test Circuit and Bias Configuration for KGF1522 at 1.9 GHz CC T1 IN RG T2 T3 (1) KGF 1522 T4 (3) T5 T6 T7 OUT (4) T8 RFC C2 CB VDD T9 C1 CC CF T1: Z0 = 75 W, E = 25 deg T5: Z0 = 100 W, E = 95 deg T2: Z0 = 100 W, E = 1 deg T6: Z0 = 100 W, E = 24 deg T3: Z0 = 100 W, E = 78 deg T7: Z0 = 75 W, E = 23 deg T4 = T8: Z0 = 100 W, E = 10 deg T9: Z0 = 100 W, E = 5 deg C1 = 1.40 pF, C2 = 1.35 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG = 1000 W 8/8