OKI KGF1313

This version: Jul. 1998
Previous version: Jan. 1998
E2Q0029-38-72
¡ electronic components
KGF1313
¡ electronic components
KGF1313
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with
frequencies ranging from the UHF-band to the L-band. This device features high efficiency and
high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for
3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high
efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as
a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless
phones.
FEATURES
• Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz
• High output power: 27 dBm (min.) at 1.9 GHz
• High efficiency: 50% (typ.) at 1.9 GHz
• Low thermal resistance: 23°C/W (typ.)
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5±0.1
1.5±0.1
4±0.2
1±0.2
2.5±0.1
1.6 +0.15
–0.10
0.48 +0.08
–0.05
0.4
+0.08
–0.05
1.5±0.1 1.5±0.1
3±0.1
0.39±0.05
0.4
+0.08
–0.05
(Unit: mm)
Package material
Lead frame material
Epoxy resin
Pin treatment
Cu
Solder plating
Solder plate thickness
5 mm or more
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KGF1313
MARKING
(1)
P1
PRODUCT TYPE
XX
LOT NUMBER
(MUMERICAL or
ALPHABETICAL)
(2)
(3)
(1) Gate
(2) Source
(3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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KGF1313
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Condition
Unit
Min.
Max.
Drain-source voltage
VDS
Ta = 25°C
V
—
7.0
Gate-source voltage
VGS
Ta = 25°C
V
–5.0
0.4
Drain current
IDS
Ta = 25°C
A
—
2.0
Total power dissipation
Ptot
Ta = Tc = 25°C
W
—
4.5
Channel temperature
Tch
—
°C
—
150
Storage temperature
Tstg
—
°C
–45
125
Condition
Unit
Min.
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Symbol
Typ.
Max.
Gate-source leakage current
IGSS
VGS = –5 V
mA
—
—
100
Gate-drain leakage current
IGDO
VGD = –12 V
mA
—
—
500
IDS(off)
VDS = 7 V, VGS = –5 V
mA
—
—
1500
IDSS
VDS = 1.5 V, VGS = 0 V
A
1.3
—
—
VGS(off)
VDS = 3 V, IDS = 4.0 mA
Drain-source leakage current
Drain current
Gate-source cut-off voltage
Output power
PO
(*1), PIN = 20 dBm
V
–3.0
—
–2.0
dBm
27.0
27.5
—
hD
(*1), PIN = 20 dBm
%
45
50
—
Linear gain
GLIN
(*1), PIN = 0 dBm
dB
—
9.5
—
Thermal resistance
Rth
Channel to case
°C/W
—
15
—
Drain efficiency
*1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 200 mA
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KGF1313
RF CHARACTERISTICS
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KGF1313
Typical S Parameters
VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA
Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
0.929
–144.45
4.159
98.07
0.030
29.22
0.715
–178.78
600.0
0.926
–151.64
3.643
93.23
0.031
27.84
0.717
179.91
700.0
0.925
–157.14
3.189
88.93
0.032
26.84
0.720
178.56
800.0
0.923
–161.46
2.833
85.11
0.033
26.40
0.721
177.48
900.0
0.923
–165.18
2.543
81.97
0.034
26.26
0.721
176.49
1000.0
0.921
–168.30
2.314
78.72
0.035
25.70
0.719
175.41
1100.0
0.919
–171.07
2.121
75.71
0.036
25.89
0.719
174.68
1200.0
0.917
–173.67
1.959
72.79
0.037
25.53
0.718
173.46
1300.0
0.915
–175.87
1.823
70.07
0.038
25.89
0.716
172.74
1400.0
0.913
–178.12
1.702
67.46
0.040
25.44
0.717
171.75
1500.0
0.911
179.76
1.602
64.62
0.041
25.55
0.713
170.66
1600.0
0.907
177.80
1.511
62.17
0.042
25.16
0.714
169.82
1700.0
0.903
175.91
1.428
59.34
0.043
24.95
0.708
168.55
1800.0
0.901
174.04
1.361
56.91
0.044
24.92
0.710
167.77
1900.0
0.896
172.38
1.292
54.42
0.046
24.41
0.704
166.73
2000.0
0.894
170.48
1.236
51.87
0.047
24.23
0.706
165.70
2100.0
0.890
168.74
1.180
49.30
0.048
23.93
0.700
164.81
2200.0
0.885
167.12
1.130
47.08
0.049
23.58
0.702
163.51
2300.0
0.882
165.38
1.086
44.40
0.051
23.06
0.697
162.59
2400.0
0.876
163.78
1.043
42.64
0.052
22.40
0.697
161.49
2500.0
0.875
162.12
1.011
39.67
0.053
21.91
0.692
160.22
2600.0
0.870
160.47
0.972
37.75
0.054
21.43
0.691
159.44
2700.0
0.866
158.91
0.942
35.06
0.056
20.25
0.689
158.03
2800.0
0.863
157.28
0.911
33.01
0.057
19.79
0.687
157.02
2900.0
0.858
155.62
0.875
30.62
0.059
18.82
0.688
155.85
3000.0
0.858
153.95
0.856
28.46
0.059
18.59
0.683
154.65
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KGF1313
Typical S Parameters
VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
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KGF1313
Test Circuit and Bias Configuration for KGF1313 at 1.9 GHz
VGS
CF
RFC
CB
T1
CF
CB
T2
T3
(1)
(3)
T4
T5
T6
VDS
RFC
OUT
IN
CC
C1
(2)
CC
f = 1.9 GHz
T1: Z0 = 80 W, E = 77 deg
T4: Z0 = 30 W, E = 53 deg
T2: Z0 = 10 W, E = 18 deg
T5: Z0 = 27 W, E = 42 deg
T3: Z0 = 30 W, E = 53 deg
T6: Z0 = 80 W, E = 43 deg
C1 = 0.8 pF
CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH
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