This version: Jul. 1998 Previous version: Jan. 1998 E2Q0029-38-72 ¡ electronic components KGF1313 ¡ electronic components KGF1313 Power FET (Plastic Package Type) GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-band to the L-band. This device features high efficiency and high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for 3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless phones. FEATURES • Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz • High output power: 27 dBm (min.) at 1.9 GHz • High efficiency: 50% (typ.) at 1.9 GHz • Low thermal resistance: 23°C/W (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.5±0.1 4±0.2 1±0.2 2.5±0.1 1.6 +0.15 –0.10 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.39±0.05 0.4 +0.08 –0.05 (Unit: mm) Package material Lead frame material Epoxy resin Pin treatment Cu Solder plating Solder plate thickness 5 mm or more 1/7 ¡ electronic components KGF1313 MARKING (1) P1 PRODUCT TYPE XX LOT NUMBER (MUMERICAL or ALPHABETICAL) (2) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1313 ABSOLUTE MAXIMUM RATINGS Item Symbol Condition Unit Min. Max. Drain-source voltage VDS Ta = 25°C V — 7.0 Gate-source voltage VGS Ta = 25°C V –5.0 0.4 Drain current IDS Ta = 25°C A — 2.0 Total power dissipation Ptot Ta = Tc = 25°C W — 4.5 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 Condition Unit Min. ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Typ. Max. Gate-source leakage current IGSS VGS = –5 V mA — — 100 Gate-drain leakage current IGDO VGD = –12 V mA — — 500 IDS(off) VDS = 7 V, VGS = –5 V mA — — 1500 IDSS VDS = 1.5 V, VGS = 0 V A 1.3 — — VGS(off) VDS = 3 V, IDS = 4.0 mA Drain-source leakage current Drain current Gate-source cut-off voltage Output power PO (*1), PIN = 20 dBm V –3.0 — –2.0 dBm 27.0 27.5 — hD (*1), PIN = 20 dBm % 45 50 — Linear gain GLIN (*1), PIN = 0 dBm dB — 9.5 — Thermal resistance Rth Channel to case °C/W — 15 — Drain efficiency *1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 200 mA 3/7 ¡ electronic components KGF1313 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1313 Typical S Parameters VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.929 –144.45 4.159 98.07 0.030 29.22 0.715 –178.78 600.0 0.926 –151.64 3.643 93.23 0.031 27.84 0.717 179.91 700.0 0.925 –157.14 3.189 88.93 0.032 26.84 0.720 178.56 800.0 0.923 –161.46 2.833 85.11 0.033 26.40 0.721 177.48 900.0 0.923 –165.18 2.543 81.97 0.034 26.26 0.721 176.49 1000.0 0.921 –168.30 2.314 78.72 0.035 25.70 0.719 175.41 1100.0 0.919 –171.07 2.121 75.71 0.036 25.89 0.719 174.68 1200.0 0.917 –173.67 1.959 72.79 0.037 25.53 0.718 173.46 1300.0 0.915 –175.87 1.823 70.07 0.038 25.89 0.716 172.74 1400.0 0.913 –178.12 1.702 67.46 0.040 25.44 0.717 171.75 1500.0 0.911 179.76 1.602 64.62 0.041 25.55 0.713 170.66 1600.0 0.907 177.80 1.511 62.17 0.042 25.16 0.714 169.82 1700.0 0.903 175.91 1.428 59.34 0.043 24.95 0.708 168.55 1800.0 0.901 174.04 1.361 56.91 0.044 24.92 0.710 167.77 1900.0 0.896 172.38 1.292 54.42 0.046 24.41 0.704 166.73 2000.0 0.894 170.48 1.236 51.87 0.047 24.23 0.706 165.70 2100.0 0.890 168.74 1.180 49.30 0.048 23.93 0.700 164.81 2200.0 0.885 167.12 1.130 47.08 0.049 23.58 0.702 163.51 2300.0 0.882 165.38 1.086 44.40 0.051 23.06 0.697 162.59 2400.0 0.876 163.78 1.043 42.64 0.052 22.40 0.697 161.49 2500.0 0.875 162.12 1.011 39.67 0.053 21.91 0.692 160.22 2600.0 0.870 160.47 0.972 37.75 0.054 21.43 0.691 159.44 2700.0 0.866 158.91 0.942 35.06 0.056 20.25 0.689 158.03 2800.0 0.863 157.28 0.911 33.01 0.057 19.79 0.687 157.02 2900.0 0.858 155.62 0.875 30.62 0.059 18.82 0.688 155.85 3000.0 0.858 153.95 0.856 28.46 0.059 18.59 0.683 154.65 5/7 ¡ electronic components KGF1313 Typical S Parameters VDS = 3.4 V, VGS = –1.43 V, IDS = 200 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1313 Test Circuit and Bias Configuration for KGF1313 at 1.9 GHz VGS CF RFC CB T1 CF CB T2 T3 (1) (3) T4 T5 T6 VDS RFC OUT IN CC C1 (2) CC f = 1.9 GHz T1: Z0 = 80 W, E = 77 deg T4: Z0 = 30 W, E = 53 deg T2: Z0 = 10 W, E = 18 deg T5: Z0 = 27 W, E = 42 deg T3: Z0 = 30 W, E = 53 deg T6: Z0 = 80 W, E = 43 deg C1 = 0.8 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH 7/7