This version: Jul. 1998 Previous version: Jan. 1998 E2Q0025-38-71 ¡ electronic components KGF1262 ¡ electronic components KGF1262 Medium-Power Amplifier GENERAL DESCRIPTION The KGF1262 is a medium-power amplifier, with frequencies ranging from the UHF-band to the L-band, that features high gain, high output power, and low current operation. The KGF1262 specifications are guaranteed to a fixed matching circuit for 5.2 V and 1.9 GHz; external impedance-matching circuits are also required. Because of the high gain and high output power at the low operating current, the KGF1262 is ideal as a transmitter-driver amplifier for personal handy phones of more than 1.5 GHz band. FEATURES • High linear gain: 15 dB (min.) at 1.9 GHz • High output power: 18 dBm (min.) at 1.9 GHz • Low current operation: 70 mA (max.) • Self-bias circuit configuration with built-in source capacitor • package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more Lead frame material (Unit: mm) 1/10 ¡ electronic components KGF1262 MARKING (4) (3) N X X (1) (2) NUMERICAL ALPHABETICAL LOT NUMBER PRODUCT TYPE (1) Gate (2) Source (3) Drain (4) GND CIRCUIT Drain(3) Gate(1) Source(2) GND(4) 2/10 ¡ electronic components KGF1262 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 10 Gate-source voltage VGS Ta = 25°C V –5.0 0.4 Drain current IDS Ta = 25°C mA — 360 Total power dissipation Ptot Ta = 25°C mW — 300 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Operating current Gate-source cut-off voltage Transconductance Linear gain Output power Symbol Unit Min. Typ. Max. IGSS VGS = –5 V mA — — 0.1 IGDO VGD = –15 V mA — — 0.5 VDS = 3 V, VGS = –2.5 V mA — — 1.0 VDS = 3 V, VGS = 0 V mA 180 — — (*1), PIN = 7 dBm mA — 50.0 70.0 IDS(off) IDSS ID Condition VGS(off) VDS = 3 V, IDS = 720 mA mA –2.0 — –1.0 gm GLIN VDS = 3 V, IDS = 60 mA mS 100 — — PO (*1), PIN = –10 dBm (*1), PIN = 7 dBm dB 15.0 16.5 — dBm 18.0 20.0 — *1 Self-bias condition: VDD = 5 V±0.25 V, VG = 0 V, f = 1.9 GHz 3/10 ¡ electronic components KGF1262 RF CHARACTERISTICS 4/10 ¡ electronic components KGF1262 5/10 ¡ electronic components KGF1262 Typical S Parameters VDD = 5 V, VG = 0 V, ID = 45.4 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.861 –43.20 8.314 132.26 0.023 81.74 0.708 –20.18 600.0 0.885 –46.52 7.319 131.88 0.032 73.96 0.740 –23.72 700.0 0.938 –53.35 7.176 131.57 0.035 68.04 0.739 –29.36 800.0 0.969 –62.62 7.448 127.57 0.038 58.11 0.724 –34.75 900.0 0.972 –72.43 7.617 121.79 0.041 59.61 0.693 –39.17 1000.0 0.942 –82.27 7.566 113.36 0.037 52.91 0.657 –42.84 1100.0 0.907 –91.58 7.454 105.56 0.038 55.56 0.630 –44.99 1200.0 0.852 –99.25 7.080 97.79 0.037 61.75 0.610 –46.73 1300.0 0.804 –105.78 6.706 91.46 0.038 66.19 0.599 –48.16 1400.0 0.756 –112.04 6.346 85.32 0.038 75.05 0.591 –49.34 1500.0 0.718 –116.78 6.004 79.92 0.040 78.36 0.584 –51.27 1600.0 0.681 –121.54 5.672 74.96 0.046 85.13 0.589 –52.35 1700.0 0.654 –125.66 5.394 70.48 0.052 88.18 0.588 –54.02 1800.0 0.631 –129.73 5.093 65.90 0.057 93.35 0.594 –56.54 1900.0 0.618 –133.88 4.889 61.24 0.064 95.49 0.598 –59.04 2000.0 0.603 –137.40 4.659 57.66 0.074 95.70 0.605 –60.99 2100.0 0.594 –140.49 4.501 53.61 0.083 94.46 0.614 –63.71 2200.0 0.585 –143.89 4.321 50.05 0.095 94.21 0.619 –66.74 2300.0 0.581 –146.80 4.179 46.29 0.107 96.61 0.624 –69.08 2400.0 0.582 –150.18 4.056 42.23 0.117 94.20 0.628 –72.55 2500.0 0.578 –152.79 3.902 38.65 0.128 92.99 0.643 –76.40 2600.0 0.581 –156.41 3.786 35.05 0.143 91.07 0.646 –80.05 2700.0 0.587 –158.85 3.685 31.84 0.156 89.38 0.662 –83.66 2800.0 0.592 –161.90 3.578 27.91 0.171 88.38 0.668 –86.20 2900.0 0.597 –164.17 3.502 25.03 0.185 87.34 0.683 –91.62 3000.0 0.611 –167.83 3.398 20.74 0.202 84.36 0.696 –96.08 6/10 ¡ electronic components KGF1262 Typical S Parameters VDD = 5 V, VG = 0 V, ID = 45.4 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/10 ¡ electronic components KGF1262 Typical S Parameters VDD = 3 V, VG = 0 V, ID = 48.5 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.916 –43.51 6.335 140.34 0.027 98.55 0.457 –4.57 600.0 0.927 –48.23 5.762 139.83 0.039 83.96 0.498 –8.99 700.0 0.964 –54.71 5.580 136.14 0.042 75.40 0.502 –19.93 800.0 0.993 –63.63 5.892 132.31 0.043 69.15 0.515 –24.18 900.0 1.005 –72.69 5.909 126.70 0.048 69.44 0.483 –28.86 1000.0 0.987 –82.39 6.026 117.94 0.047 65.48 0.493 –33.12 1100.0 0.967 –91.73 5.982 111.07 0.051 67.55 0.477 –34.38 1200.0 0.920 –99.80 5.754 101.93 0.053 67.95 0.490 –39.74 1300.0 0.876 –107.04 5.571 95.56 0.055 70.09 0.495 –41.60 1400.0 0.836 –113.69 5.299 88.68 0.059 72.60 0.498 –45.70 1500.0 0.797 –119.30 5.086 82.78 0.060 73.94 0.501 –49.18 1600.0 0.763 –124.95 4.821 77.21 0.065 76.41 0.507 –52.17 1700.0 0.733 –129.64 4.628 71.96 0.071 78.66 0.514 –55.11 1800.0 0.706 –134.46 4.421 67.14 0.076 80.42 0.524 –58.04 1900.0 0.691 –139.12 4.262 61.28 0.083 84.73 0.540 –62.81 2000.0 0.669 –143.06 4.068 56.47 0.089 83.56 0.562 –66.89 2100.0 0.661 –146.80 3.913 51.74 0.100 83.44 0.562 –71.44 2200.0 0.651 –149.92 3.747 47.17 0.112 83.94 0.576 –76.90 2300.0 0.643 –153.50 3.620 43.20 0.123 86.10 0.578 –79.82 2400.0 0.648 –157.16 3.475 38.19 0.136 84.08 0.579 –85.80 2500.0 0.638 –160.05 3.359 34.18 0.146 84.76 0.598 –90.54 2600.0 0.646 –164.22 3.210 30.03 0.164 81.24 0.591 –96.30 2700.0 0.650 –167.02 3.130 26.08 0.176 80.05 0.618 –101.05 2800.0 0.651 –170.84 3.000 21.96 0.193 78.05 0.607 –104.47 2900.0 0.659 –173.51 2.930 18.10 0.211 76.90 0.634 –112.05 3000.0 0.667 –177.55 2.809 13.75 0.225 74.08 0.638 –117.04 8/10 ¡ electronic components KGF1262 Typical S Parameters VDD = 3 V, VG = 0 V, ID = 48.5 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 9/10 ¡ electronic components KGF1262 Test Circuit and Bias Configuration for KGF1262 at 1.9 GHz CS CB CF VDD RG T1 T2 IN CC T3 T4 C1 C2 (2) (1) KGF (3) 1262 (4) T9 T5 T6 RFC OUT T7 CC T8 C3 C4 T1: Z0 = 75 W, E = 90 deg T5: Z0 = 75 W, E = 70 deg T2: Z0 = 75 W, E = 55 deg T6: Z0 = 75 W, E = 65 deg T3 = T9: Z0 = 100 W, E = 1 deg T4 = T7 = T8: Z0 = 100 W, E = 5 deg C1 = 1.2 pF, C2 = 1.5 pF, C3 = 0.6 pF, C4 = 0.4 pF, CS = 100 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG = 1000 W 10/10