OKI KGF1262

This version: Jul. 1998
Previous version: Jan. 1998
E2Q0025-38-71
¡ electronic components
KGF1262
¡ electronic components
KGF1262
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1262 is a medium-power amplifier, with frequencies ranging from the UHF-band to the
L-band, that features high gain, high output power, and low current operation. The KGF1262
specifications are guaranteed to a fixed matching circuit for 5.2 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of the high gain and high output power
at the low operating current, the KGF1262 is ideal as a transmitter-driver amplifier for personal
handy phones of more than 1.5 GHz band.
FEATURES
• High linear gain: 15 dB (min.) at 1.9 GHz
• High output power: 18 dBm (min.) at 1.9 GHz
• Low current operation: 70 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.36 0.74
0.3 MIN
1.1±0.15
0.4 +0.1
–0.05
1.5±0.15
3.0±0.2
0.6 +0.1
–0.05
0 to 0.15
Package material
1.9±0.1
0.125
+0.03
–0
2.8±0.15
Epoxy resin
Pin treatment
42 alloy
Solder plating
Solder plate thickness
5 mm or more
Lead frame material
(Unit: mm)
1/10
¡ electronic components
KGF1262
MARKING
(4)
(3)
N X X
(1)
(2)
NUMERICAL
ALPHABETICAL
LOT
NUMBER
PRODUCT TYPE
(1) Gate
(2) Source
(3) Drain
(4) GND
CIRCUIT
Drain(3)
Gate(1)
Source(2)
GND(4)
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¡ electronic components
KGF1262
ABSOLUTE MAXIMUM RATINGS
Symbol
Condition
Unit
Min.
Max.
Drain-source voltage
Item
VDS
Ta = 25°C
V
—
10
Gate-source voltage
VGS
Ta = 25°C
V
–5.0
0.4
Drain current
IDS
Ta = 25°C
mA
—
360
Total power dissipation
Ptot
Ta = 25°C
mW
—
300
Channel temperature
Tch
—
°C
—
150
Storage temperature
Tstg
—
°C
–45
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Linear gain
Output power
Symbol
Unit
Min.
Typ.
Max.
IGSS
VGS = –5 V
mA
—
—
0.1
IGDO
VGD = –15 V
mA
—
—
0.5
VDS = 3 V, VGS = –2.5 V
mA
—
—
1.0
VDS = 3 V, VGS = 0 V
mA
180
—
—
(*1), PIN = 7 dBm
mA
—
50.0
70.0
IDS(off)
IDSS
ID
Condition
VGS(off)
VDS = 3 V, IDS = 720 mA
mA
–2.0
—
–1.0
gm
GLIN
VDS = 3 V, IDS = 60 mA
mS
100
—
—
PO
(*1), PIN = –10 dBm
(*1), PIN = 7 dBm
dB
15.0
16.5
—
dBm
18.0
20.0
—
*1 Self-bias condition: VDD = 5 V±0.25 V, VG = 0 V, f = 1.9 GHz
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KGF1262
RF CHARACTERISTICS
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KGF1262
5/10
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KGF1262
Typical S Parameters
VDD = 5 V, VG = 0 V, ID = 45.4 mA
Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
0.861
–43.20
8.314
132.26
0.023
81.74
0.708
–20.18
600.0
0.885
–46.52
7.319
131.88
0.032
73.96
0.740
–23.72
700.0
0.938
–53.35
7.176
131.57
0.035
68.04
0.739
–29.36
800.0
0.969
–62.62
7.448
127.57
0.038
58.11
0.724
–34.75
900.0
0.972
–72.43
7.617
121.79
0.041
59.61
0.693
–39.17
1000.0
0.942
–82.27
7.566
113.36
0.037
52.91
0.657
–42.84
1100.0
0.907
–91.58
7.454
105.56
0.038
55.56
0.630
–44.99
1200.0
0.852
–99.25
7.080
97.79
0.037
61.75
0.610
–46.73
1300.0
0.804
–105.78
6.706
91.46
0.038
66.19
0.599
–48.16
1400.0
0.756
–112.04
6.346
85.32
0.038
75.05
0.591
–49.34
1500.0
0.718
–116.78
6.004
79.92
0.040
78.36
0.584
–51.27
1600.0
0.681
–121.54
5.672
74.96
0.046
85.13
0.589
–52.35
1700.0
0.654
–125.66
5.394
70.48
0.052
88.18
0.588
–54.02
1800.0
0.631
–129.73
5.093
65.90
0.057
93.35
0.594
–56.54
1900.0
0.618
–133.88
4.889
61.24
0.064
95.49
0.598
–59.04
2000.0
0.603
–137.40
4.659
57.66
0.074
95.70
0.605
–60.99
2100.0
0.594
–140.49
4.501
53.61
0.083
94.46
0.614
–63.71
2200.0
0.585
–143.89
4.321
50.05
0.095
94.21
0.619
–66.74
2300.0
0.581
–146.80
4.179
46.29
0.107
96.61
0.624
–69.08
2400.0
0.582
–150.18
4.056
42.23
0.117
94.20
0.628
–72.55
2500.0
0.578
–152.79
3.902
38.65
0.128
92.99
0.643
–76.40
2600.0
0.581
–156.41
3.786
35.05
0.143
91.07
0.646
–80.05
2700.0
0.587
–158.85
3.685
31.84
0.156
89.38
0.662
–83.66
2800.0
0.592
–161.90
3.578
27.91
0.171
88.38
0.668
–86.20
2900.0
0.597
–164.17
3.502
25.03
0.185
87.34
0.683
–91.62
3000.0
0.611
–167.83
3.398
20.74
0.202
84.36
0.696
–96.08
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KGF1262
Typical S Parameters
VDD = 5 V, VG = 0 V, ID = 45.4 mA
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
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KGF1262
Typical S Parameters
VDD = 3 V, VG = 0 V, ID = 48.5 mA
Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
0.916
–43.51
6.335
140.34
0.027
98.55
0.457
–4.57
600.0
0.927
–48.23
5.762
139.83
0.039
83.96
0.498
–8.99
700.0
0.964
–54.71
5.580
136.14
0.042
75.40
0.502
–19.93
800.0
0.993
–63.63
5.892
132.31
0.043
69.15
0.515
–24.18
900.0
1.005
–72.69
5.909
126.70
0.048
69.44
0.483
–28.86
1000.0
0.987
–82.39
6.026
117.94
0.047
65.48
0.493
–33.12
1100.0
0.967
–91.73
5.982
111.07
0.051
67.55
0.477
–34.38
1200.0
0.920
–99.80
5.754
101.93
0.053
67.95
0.490
–39.74
1300.0
0.876
–107.04
5.571
95.56
0.055
70.09
0.495
–41.60
1400.0
0.836
–113.69
5.299
88.68
0.059
72.60
0.498
–45.70
1500.0
0.797
–119.30
5.086
82.78
0.060
73.94
0.501
–49.18
1600.0
0.763
–124.95
4.821
77.21
0.065
76.41
0.507
–52.17
1700.0
0.733
–129.64
4.628
71.96
0.071
78.66
0.514
–55.11
1800.0
0.706
–134.46
4.421
67.14
0.076
80.42
0.524
–58.04
1900.0
0.691
–139.12
4.262
61.28
0.083
84.73
0.540
–62.81
2000.0
0.669
–143.06
4.068
56.47
0.089
83.56
0.562
–66.89
2100.0
0.661
–146.80
3.913
51.74
0.100
83.44
0.562
–71.44
2200.0
0.651
–149.92
3.747
47.17
0.112
83.94
0.576
–76.90
2300.0
0.643
–153.50
3.620
43.20
0.123
86.10
0.578
–79.82
2400.0
0.648
–157.16
3.475
38.19
0.136
84.08
0.579
–85.80
2500.0
0.638
–160.05
3.359
34.18
0.146
84.76
0.598
–90.54
2600.0
0.646
–164.22
3.210
30.03
0.164
81.24
0.591
–96.30
2700.0
0.650
–167.02
3.130
26.08
0.176
80.05
0.618
–101.05
2800.0
0.651
–170.84
3.000
21.96
0.193
78.05
0.607
–104.47
2900.0
0.659
–173.51
2.930
18.10
0.211
76.90
0.634
–112.05
3000.0
0.667
–177.55
2.809
13.75
0.225
74.08
0.638
–117.04
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¡ electronic components
KGF1262
Typical S Parameters
VDD = 3 V, VG = 0 V, ID = 48.5 mA
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
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KGF1262
Test Circuit and Bias Configuration for KGF1262 at 1.9 GHz
CS
CB
CF
VDD
RG
T1
T2
IN
CC
T3
T4
C1
C2
(2)
(1) KGF
(3)
1262
(4)
T9
T5
T6
RFC
OUT
T7
CC
T8
C3
C4
T1: Z0 = 75 W, E = 90 deg
T5: Z0 = 75 W, E = 70 deg
T2: Z0 = 75 W, E = 55 deg
T6: Z0 = 75 W, E = 65 deg
T3 = T9: Z0 = 100 W, E = 1 deg
T4 = T7 = T8: Z0 = 100 W, E = 5 deg
C1 = 1.2 pF, C2 = 1.5 pF, C3 = 0.6 pF, C4 = 0.4 pF, CS = 100 pF
CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF
RFC = 60 nH, RG = 1000 W
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