This version: Jul. 1998 Previous version: Jan. 1998 E2Q0030-38-72 ¡ electronic components KGF1323 ¡ electronic components KGF1323 Power FET(Plastic Package Type) GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET that features high efficiency and high output power. The KGF1323 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and plastic package, the KGF1323 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as TDMA-type cellular phones. FEATURES • High output power: 33 dBm (min.) • High efficiency: 70% (typ.) • Low thermal resistance: 23°C/W (typ.) • Package: 3PMMP (SOT-89 type) PACKAGE DIMENSIONS 4.5±0.1 1.5±0.1 4±0.2 1±0.2 2.5±0.1 1.6 +0.15 –0.10 0.48 +0.08 –0.05 0.4 +0.08 –0.05 1.5±0.1 1.5±0.1 3±0.1 0.39±0.05 0.4 +0.08 –0.05 (Unit: mm) Package material Lead frame material Epoxy resin Pin treatment Cu Solder plating Solder plate thickness 5 mm or more 1/7 ¡ electronic components KGF1323 MARKING (1) P2 PRODUCT TYPE XX LOT NUMBER (NUMERICAL or ALPHABETICAL) (2) (3) (1) Gate (2) Source (3) Drain CIRCUIT Drain(3) Gate(1) Source(2) 2/7 ¡ electronic components KGF1323 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 10 Gate-source voltage VGS Ta = 25°C V –6.0 0.4 Drain current IDS Ta = 25°C A — 3.0 Total power dissipation Ptot Ta = Tc = 25°C W — 5 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Unit Min. Typ. Max. Gate-source leakage current Item IGSS VGS = –6 V mA — — 100 Gate-drain leakage current IGDO VGD = –16 V mA — — 500 IDS(off) VDS = 10 V, VGS = –6 V mA — — 1500 IDSS VDS = 1.5 V, VGS = 0 V A 2.0 — — Drain-source leakage current Drain current Gate-source cut-off voltage Output power Symbol VGS(off) PO Condition VDS = 3 V, IDS = 4.8 mA (*1), PIN = 22 dBm V –3.8 — –2.8 dBm 33.0 33.5 — hD (*1), PIN = 22 dBm % 60 70 — Linear gain GLIN (*1), PIN = 0 dBm dB — 15.0 — Thermal resistance Rth Channel to case °C/W — 14 — Drain efficiency *1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA 3/7 ¡ electronic components KGF1323 RF CHARACTERISTICS 4/7 ¡ electronic components KGF1323 Typical S Parameters VDS = 5.8 V, VGS = –2.80 V, IDS = 240 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 0.921 –154.27 3.891 91.63 0.037 20.87 0.655 –176.53 600.0 0.921 –160.15 3.291 87.28 0.038 19.65 0.657 –178.18 700.0 0.920 –164.62 2.854 82.96 0.039 18.86 0.659 –179.48 800.0 0.917 –168.17 2.519 79.31 0.040 18.39 0.661 179.28 900.0 0.917 –171.22 2.250 76.01 0.040 18.30 0.660 178.41 1000.0 0.914 –173.90 2.041 72.42 0.041 17.74 0.661 177.38 1100.0 0.913 –176.22 1.871 69.42 0.042 17.99 0.660 176.61 1200.0 0.911 –178.42 1.721 66.28 0.043 17.72 0.660 175.52 1300.0 0.909 179.67 1.599 63.39 0.044 18.08 0.660 174.76 1400.0 0.907 177.63 1.491 60.39 0.045 17.76 0.661 173.75 1500.0 0.903 175.71 1.404 57.29 0.046 17.98 0.658 172.81 1600.0 0.901 173.93 1.324 54.72 0.047 17.75 0.660 171.94 1700.0 0.899 172.15 1.248 51.47 0.048 17.57 0.654 170.90 1800.0 0.893 170.52 1.188 48.90 0.048 17.85 0.660 170.04 1900.0 0.892 169.01 1.127 45.99 0.050 17.23 0.653 169.08 2000.0 0.888 167.01 1.077 43.37 0.051 17.60 0.658 168.02 2100.0 0.885 165.66 1.027 40.36 0.052 17.24 0.651 167.14 2200.0 0.881 163.90 0.983 37.89 0.053 16.83 0.655 165.92 2300.0 0.875 162.38 0.944 35.01 0.055 16.62 0.650 164.99 2400.0 0.873 160.75 0.906 32.96 0.055 16.02 0.652 163.98 2500.0 0.869 159.09 0.876 29.90 0.057 16.20 0.649 162.58 2600.0 0.866 157.56 0.844 27.58 0.058 15.62 0.649 161.68 2700.0 0.863 155.95 0.816 24.58 0.060 14.77 0.649 160.24 2800.0 0.856 154.35 0.789 22.20 0.061 14.20 0.646 159.52 2900.0 0.854 152.84 0.756 19.48 0.063 12.48 0.649 158.10 3000.0 0.852 151.31 0.736 17.09 0.063 11.90 0.646 157.17 5/7 ¡ electronic components KGF1323 Typical S Parameters VDS = 5.8 V, VGS = –2.80 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 6/7 ¡ electronic components KGF1323 Test Circuit and Bias Configuration for KGF1323 at 850 MHz VGS CF RFC CB T1 CF CB T2 (1) (3) T3 T4 VDS RFC OUT IN CC C1 C2 f = 850 MHz T1: Z0 = 50 W, E = 28.5 deg T2: Z0 = 50 W, E = 16.5 deg (2) CC C3 C4 T3: Z0 = 50 W, E = 15.0 deg T4: Z0 = 50 W, E = 30.0 deg C1 = 2.0 pF, C2 = 10.0 pF, C3 = 5.0 pF, C4 = 1.0 pF CC = 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH 7/7