BUX84 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C AUGUST 1978 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) SYMBOL VALUE UNIT Collector-base voltage (IE = 0) RATING VCBO 800 V Collector-emitter voltage (V BE = 0) VCES 800 V Collector-emitter voltage (IB = 0) VCEO 400 V IC 2 A Continuous collector current Peak collector current (see Note 1) ICM 3 A Continuous device dissipation at (or below) 25°C case temperature Ptot 40 W Tj -65 to +150 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob NOTES: 2. 3. 4. 5. TEST CONDITIONS Collector-emitter sustaining voltage IC = 0.1 A L = 25 mH Collector-emitter VCE = 800 V VBE = 0 cut-off current V CE = 800 V VBE = 0 VEB = 5V IC = 0 VCE = 5V IC = 0.1 A Emitter cut-off current Forward current transfer ratio IC = 0.3 A IB = 0.03 A saturation voltage IB = 0.2 A IC = 1A IB = 0.2 A IC = 1A VCE = 10 V IC = 0.2 A VCB = 20 V IE = 0 saturation voltage Current gain bandwidth product Output capacitance (see Note 2) TYP MAX 400 0.2 TC = 125°C 1 (see Notes 3 and 4) UNIT V 1 Collector-emitter Base-emitter MIN mA mA 35 0.8 (see Notes 3 and 4) 1 (see Notes 3 and 4) 1.1 f = 0.1 MHz V V 12 MHz 60 pF Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 2.5 °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton Turn on time ts Storage time tf Fall time tf † Fall time † IC = 1 A IB(on) = 0.2 A V CC = 250 V (see Figures 1 and 2) IC = 1 A IB(on) = 0.2 A V CC = 250 V TC = 95°C MIN IB(off) = -0.4 A IB(off) = -0.4 A Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP MAX UNIT 0.25 0.5 µs 1.8 µs 0.2 µs 0.4 µs BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µ F 120 Ω T V1 100 Ω 100 µ F 47 Ω tp V cc = 250 V TUT 15 Ω V1 100 Ω 680 µ F 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = toff 90% D dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP741AJ 100 10 ICES - Collector Cut-off Current - µA hFE - Typical DC Current Gain VCE = 5 V TC = 25°C 10 1·0 0·1 1·0 5·0 TCP741AK VCE = 800 V VBE = 0 1·0 0·1 0·01 0·001 -60 -30 IC - Collector Current - A 0 30 Figure 4. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AB 1·0 0·1 0.01 1·0 10 100 VCE - Collector-Emitter Voltage - V Figure 5. 4 90 TC - Case Temperature - °C Figure 3. PRODUCT 60 INFORMATION 1000 120 150 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 ZθJC / Rθ JC - Normalised Transient Thermal Impedance THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION TCP741AL 1·0 50% 20% 10% 0·1 5% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = P D(peak) · 0·01 10-5 10 -4 10 -3 t1 t2 ( ) 10-2 Zθ JC RθJC · Rθ JC(max) 10-1 100 t1 - Power Pulse Duration - s Figure 6. PRODUCT INFORMATION 5 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7