TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 txo typically 320 ns, IC = 10 A C 2 E 3 ● TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL790 TIPL790A TIPL790 TIPL790A TIPL790 TIPL790A VCBO VCES VCEO VALUE 150 200 150 200 120 150 UNIT V V V V EBO 8 V IC 10 A Peak collector current (see Note 1) ICM 15 A Continuous device dissipation at (or below) 25°C case temperature Ptot 70 W Tj -65 to +150 °C Tstg -65 to +150 °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) VCBO ICES ICEV ICEO IEBO hFE VCE(sat) V BE(sat) VEC ft Cob NOTES: 2. 3. 4. 5. TEST CONDITIONS Collector-emitter sustaining voltage Collector-base breakdown voltage IC = 100 mA IC = L = 25 mH 1 mA MIN (see Note 2) (see Note 3) TIPL790 120 TIPL790A 150 TIPL790 150 TIPL790A 200 TYP MAX V V VCE = 150 V VBE = 0 TIPL790 0.05 Collector-emitter V CE = 200 V VBE = 0 TIPL790A 0.05 cut-off current V CE = 150 V VBE = 0 TC = 100°C TIPL790 V CE = 200 V VBE = 0 TC = 100°C TIPL790A 1 TIPL790 50 TIPL790A 50 Collector cut-off VCE = 150 V current V CE = 200 V 1.5 < VEB <8 V 1 Collector cut-off VCE = 120 V IB = 0 TIPL790 50 current V CE = 150 V IB = 0 TIPL790A 50 VEB = 5V IC = 0 VCE = 5V IC = 0.5 A Emitter cut-off current Forward current transfer ratio 4 (see Notes 3 and 4) IB = 20 mA IC = 4A Collector-emitter IB = 30 mA IC = 7A saturation voltage IB = 50 mA IC = 10 A IB = 50 mA IC = 10 A IB = 20 mA IC = 4A Base-emitter IB = 30 mA IC = 7A saturation voltage IB = 50 mA IC = 10 A IB = 50 mA IC = 10 A IE = 10 A IB = 0 VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz Parallel diode forward voltage Current gain bandwidth product Output capacitance UNIT 60 mA µA µA mA 500 1.2 (see Notes 3 and 4) 1.5 2.0 TC = 100°C V 2.0 1.8 (see Notes 3 and 4) 1.9 2.2 TC = 100°C 2.1 3 1 MHz V (see Note 5) V 10 MHz 90 pF Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.79 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † † MIN TYP MAX UNIT tsi Current storage time 450 700 ns trv Voltage rise time 160 750 ns tfi Current fall time 250 400 ns tti Current tail time 280 450 ns txo Cross over time 320 500 ns IC = 10 A IB(on) = 50 mA IB(off) = -2.5 A V BE(off) = -5 V (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF V Gen 180 µ H 2N2222 1 kΩ 68 Ω 0.02 µ F vcc BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TC = 125°C TC = 25°C TC = -65°C VCE(sat) - Collector-Emitter Saturation Voltage - V TCE785AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = 5 V 1000 100 1·0 TCE785AB 6 IC = 10 A IC = 7 A IC = 4 A IC = 1 A 5 4 3 2 1 0 10 1 10 IC - Collector Current - A IB - Base Current - mA Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1·8 TCE785AC IC = 10 A IC = 7 A IC = 4 A IC = 1 A 1·6 1·4 1·2 1·0 1·0 10 100 IB - Base Current - mA Figure 5. PRODUCT 4 COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE INFORMATION TCE785AD 10 ICES - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V 2·0 100 1·0 TIPL790A VCE = 200 V 0·1 TIPL790 VCE = 150 V 0·01 0·001 -60 -30 0 30 60 TC - Case Temperature - °C Figure 6. 90 120 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAE785AA tp = 1 ms, d = 1% tp = 2 ms, d = 5% tp = 10 ms, d = 5% DC Operation 10 1·0 0.1 TIPL790 TIPL790A 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. PRODUCT INFORMATION 5 TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7