POINN TIPL765

TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
●
Rugged Triple-Diffused Planar Construction
●
10 A Continuous Collector Current
●
Operating Characteristics Fully Guaranteed
at 100°C
B
1
●
1000 Volt Blocking Capability
C
2
●
125 W at 25°C Case Temperature
E
3
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (V BE = 0)
Collector-emitter voltage (IB = 0)
SYMBOL
TIPL765
TIPL765A
TIPL765
TIPL765A
TIPL765
TIPL765A
VCBO
VCES
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
V EBO
10
V
IC
10
A
Peak collector current (see Note 1)
ICM
15
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
125
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Emitter-base voltage
Continuous collector current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V CEO(sus)
ICES
ICEO
IEBO
hFE
VCE(sat)
V BE(sat)
ft
Cob
TEST CONDITIONS
Collector-emitter
sustaining voltage
IC =
100 mA
L = 25 mH
MIN
(see Note 2)
TIPL765
400
TIPL765A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
TIPL765
Collector-emitter
V CE = 1000 V
VBE = 0
TIPL765A
50
cut-off current
V CE = 850 V
VBE = 0
TC = 100°C
TIPL765
200
TC = 100°C
50
V CE = 1000 V
VBE = 0
TIPL765A
200
Collector cut-off
VCE = 400 V
IB = 0
TIPL765
50
current
V CE = 450 V
IB = 0
TIPL765A
50
VEB =
10 V
IC = 0
VCE =
5V
Emitter cut-off
current
Forward current
transfer ratio
1
IC = 0.5 A
(see Notes 3 and 4)
IB =
0.4 A
IC =
2A
Collector-emitter
IB =
1A
IC =
5A
saturation voltage
IB =
2A
IC = 10 A
IB =
2A
IC = 10 A
IB =
0.4 A
IC =
2A
Base-emitter
IB =
1A
IC =
5A
saturation voltage
IB =
2A
IC = 10 A
IB =
2A
IC = 10 A
TC = 100°C
VCE =
10 V
IC = 0.5 A
f=
VCB =
20 V
IE = 0
f = 0.1 MHz
Current gain
bandwidth product
Output capacitance
UNIT
15
µA
µA
mA
60
0.5
(see Notes 3 and 4)
1.0
2.5
TC = 100°C
V
5.0
1.1
(see Notes 3 and 4)
1.3
1.7
V
1.6
1 MHz
8
MHz
150
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
†
MIN
TYP
MAX
UNIT
2
µs
300
ns
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
txo
Cross over time
400
ns
tsv
Voltage storage time
3.5
µs
trv
Voltage rise time
400
ns
tfi
Current fall time
tti
Current tail time
txo
Cross over time
IC = 10 A
V BE(off) = -5 V
IB(on) = 2 A
IC = 10 A
IB(on) = 2 A
V BE(off) = -5 V
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TEST CONDITIONS
INFORMATION
200
ns
50
ns
300
ns
80
ns
500
ns
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
V Gen
180 µ H
2N2222
1 kΩ
68 Ω
0.02 µ F
vcc
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 1. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv
D - E = tfi
E - F = tti
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
PRODUCT
INFORMATION
3
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP765AE
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
1·0
0·1
1·0
TCP765AF
5·0
IC = 1 A
IC = 2 A
IC = 5 A
IC = 10 A
4·0
TC = 25°C
3·0
2·0
1·0
0
0·01
10
0·1
IC - Collector Current - A
Figure 4.
TCP765AJ
5·0
IC = 1 A
IC = 2 A
IC = 5 A
IC = 10 A
4·0
TC = 100°C
3·0
2·0
1·0
TCP765AG
1·6
1·4
1·2
1·0
IC = 10 A
IC = 5 A
IC = 2 A
IC = 1 A
0·8
0·6
0·1
1·0
IB - Base Current - A
Figure 5.
4
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
PRODUCT
10
IB - Base Current - A
Figure 3.
0
0·01
1·0
INFORMATION
10
0
0·5
1·0
IB - Base Current - A
Figure 6.
1·5
2·0
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP765AH
ICES - Collector Cut-off Current - µA
4·0
1·0
TIPL765A
VCE = 1000 V
0·1
TIPL765
VCE = 850 V
0·01
-80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 7.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP765AB
10
1·0
0.1
0·01
1·0
tp = 100 µs
tp = 500 µs
tp =
1 ms
tp =
2 ms
tp =
5 ms
tp = 10 ms
tp = 100 ms
DC Operation
TIPL765
TIPL765A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 8.
PRODUCT
INFORMATION
5
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
6
INFORMATION
MDXXAW
TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
INFORMATION
7