TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 125 W at 25°C Case Temperature E 3 SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) SYMBOL TIPL765 TIPL765A TIPL765 TIPL765A TIPL765 TIPL765A VCBO VCES VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V V EBO 10 V IC 10 A Peak collector current (see Note 1) ICM 15 A Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W Tj -65 to +150 °C Tstg -65 to +150 °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES ICEO IEBO hFE VCE(sat) V BE(sat) ft Cob TEST CONDITIONS Collector-emitter sustaining voltage IC = 100 mA L = 25 mH MIN (see Note 2) TIPL765 400 TIPL765A 450 TYP MAX V VCE = 850 V VBE = 0 TIPL765 Collector-emitter V CE = 1000 V VBE = 0 TIPL765A 50 cut-off current V CE = 850 V VBE = 0 TC = 100°C TIPL765 200 TC = 100°C 50 V CE = 1000 V VBE = 0 TIPL765A 200 Collector cut-off VCE = 400 V IB = 0 TIPL765 50 current V CE = 450 V IB = 0 TIPL765A 50 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio 1 IC = 0.5 A (see Notes 3 and 4) IB = 0.4 A IC = 2A Collector-emitter IB = 1A IC = 5A saturation voltage IB = 2A IC = 10 A IB = 2A IC = 10 A IB = 0.4 A IC = 2A Base-emitter IB = 1A IC = 5A saturation voltage IB = 2A IC = 10 A IB = 2A IC = 10 A TC = 100°C VCE = 10 V IC = 0.5 A f= VCB = 20 V IE = 0 f = 0.1 MHz Current gain bandwidth product Output capacitance UNIT 15 µA µA mA 60 0.5 (see Notes 3 and 4) 1.0 2.5 TC = 100°C V 5.0 1.1 (see Notes 3 and 4) 1.3 1.7 V 1.6 1 MHz 8 MHz 150 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † † MIN TYP MAX UNIT 2 µs 300 ns tsv Voltage storage time trv Voltage rise time tfi Current fall time tti Current tail time txo Cross over time 400 ns tsv Voltage storage time 3.5 µs trv Voltage rise time 400 ns tfi Current fall time tti Current tail time txo Cross over time IC = 10 A V BE(off) = -5 V IB(on) = 2 A IC = 10 A IB(on) = 2 A V BE(off) = -5 V TC = 100°C (see Figures 1 and 2) (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION 200 ns 50 ns 300 ns 80 ns 500 ns TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF V Gen 180 µ H 2N2222 1 kΩ 68 Ω 0.02 µ F vcc BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP765AE 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 1·0 TCP765AF 5·0 IC = 1 A IC = 2 A IC = 5 A IC = 10 A 4·0 TC = 25°C 3·0 2·0 1·0 0 0·01 10 0·1 IC - Collector Current - A Figure 4. TCP765AJ 5·0 IC = 1 A IC = 2 A IC = 5 A IC = 10 A 4·0 TC = 100°C 3·0 2·0 1·0 TCP765AG 1·6 1·4 1·2 1·0 IC = 10 A IC = 5 A IC = 2 A IC = 1 A 0·8 0·6 0·1 1·0 IB - Base Current - A Figure 5. 4 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT PRODUCT 10 IB - Base Current - A Figure 3. 0 0·01 1·0 INFORMATION 10 0 0·5 1·0 IB - Base Current - A Figure 6. 1·5 2·0 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP765AH ICES - Collector Cut-off Current - µA 4·0 1·0 TIPL765A VCE = 1000 V 0·1 TIPL765 VCE = 850 V 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 7. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP765AB 10 1·0 0.1 0·01 1·0 tp = 100 µs tp = 500 µs tp = 1 ms tp = 2 ms tp = 5 ms tp = 10 ms tp = 100 ms DC Operation TIPL765 TIPL765A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. PRODUCT INFORMATION 5 TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 6 INFORMATION MDXXAW TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7