TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1999, Power Innovations Limited, UK JANUARY 1998 - REVISED MARCH 1999 TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS ● Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply ● 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge SMBJ PACKAGE (TOP VIEW) 1 VDRM DEVICE 2 MDXXBGB device symbol V(BO) 2 MINIMUM MAXIMUM V V ‘5070 -58 -70 ‘5080 -65 -80 ‘5110 -80 -110 ‘5150 -120 -150 SD5XAB 1 ● Rated for International Surge Wave Shapes WAVE SHAPE STANDARD 2/10 µs GR-1089-CORE ITSP A 500 8/20 µs ANSI C62.41 300 10/160 µs FCC Part 68 250 10/700 µs ITU-T K20/21 200 10/560 µs FCC Part 68 160 10/1000 µs GR-1089-CORE 100 description These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode. This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels (58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING SYMBOL VALUE ‘5080 Repetitive peak off-state voltage, (see Note 1) UNIT - 58 ‘5070 - 65 VDRM ‘5110 V - 80 -120 ‘5150 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 500 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 300 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 250 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 220 ITSP 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) A 200 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 200 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 200 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 160 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 55 16.7 ms (60 Hz) full sine wave 2.1 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 140 A Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5. A 60 ITSM diT/dt 400 A/µs TJ -40 to +150 °C Tstg -65 to +150 °C See Figure 9 for voltage values at lower temperatures. Initially the TISP5xxxH3BJ must be in thermal equilibrium with TJ = 25°C. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. See Figure 10 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted) PARAMETER IDRM TEST CONDITIONS Repetitive peak offstate current VD = VDRM MIN V(BO) Breakover voltage dv/dt = -750 V/ms, RSOURCE = 300 Ω MAX -5 TA = 85°C -10 ‘5070 V(BO) TYP TA = 25°C -80 ‘5110 -110 ‘5150 -150 ‘5070 -80 Impulse breakover Maximum ramp value = -500 V ‘5080 -90 voltage di/dt = -20 A/µs, Linear current ramp, ‘5110 -120 Maximum ramp value = -10 A ‘5150 Breakover current dv/dt = -750 V/ms, VF Forward voltage IF = 5 A, tW = 500 µs RSOURCE = 300 Ω µA -70 ‘5080 dv/dt ≥ -1000 V/µs, Linear voltage ramp, I(BO) UNIT V V -160 -0.15 -0.6 A ‘5070 thru ‘5150 3 V ‘5070 thru ‘5150 5 V -3 V -0.6 A dv/dt ≤ +1000 V/µs, Linear voltage ramp, Peak forward recovery Maximum ramp value = +500 V voltage di/dt = +20 A/µs, Linear current ramp, VT On-state voltage IT = -5 A, tW = 500 µs IH Holding current IT = -5 A, di/dt = +30 mA/ms VFRM Maximum ramp value = +10 A PRODUCT 2 INFORMATION -0.15 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 electrical characteristics for terminal pair, TA = 25°C (unless otherwise noted) (continued) PARAMETER dv/dt ID TEST CONDITIONS Critical rate of rise of off-state voltage Off-state current MIN Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = -50 V f = 100 kHz, Coff f = 100 kHz, NOTE Vd = 1 Vrms, VD = -2 V Vd = 1 Vrms, VD = -50 V Vd = 1 Vrms, VD = -100 V UNIT kV/µs TA = 85°C Vd = 1 Vrms, VD = -1V, Off-state capacitance f = 100 kHz, MAX -5 (see Note 6) f = 100 kHz, TYP -10 ‘5070 300 420 ‘5080 280 390 ‘5110 240 335 ‘5150 140 195 ‘5070 260 365 ‘5080 245 345 ‘5110 205 285 ‘5150 120 170 ‘5070 90 125 ‘5080 80 110 ‘5110 65 90 ‘5150 35 50 ‘5150 30 40 µA pF 6: Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. thermal characteristics PARAMETER TEST CONDITIONS MIN TYP EIA/JESD51-3 PCB, IT = ITSM(1000), RθJA Junction to free air thermal resistance 4-layer PCB, IT = ITSM(1000), TA = 25 °C NOTE UNIT 113 TA = 25 °C, (see Note 7) 265 mm x 210 mm populated line card, MAX °C/W 50 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. PRODUCT INFORMATION 3 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 PARAMETER MEASUREMENT INFORMATION +i Quadrant I ITSP Forward Conduction Characteristic ITSM IF VF VDRM -v VD ID IDRM +v IH I(BO) VT V(BO) IT ITSM Quadrant III Switching Characteristic ITSP -i Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIR ALL MEASUREMENTS ARE REFERENCED TO TERMINAL 1 PRODUCT 4 INFORMATION PMXXACA TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 TYPICAL CHARACTERISTICS OFF-STATE CURRENT vs JUNCTION TEMPERATURE TC5XAFA 1.10 100 Normalised Breakover Voltage ID - Off-State Current - µA 10 1 0·1 VD = -50 V 0·01 NORMALISED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC5XAIA 1.05 1.00 0.95 0·001 -25 0 25 50 75 100 125 -25 150 Figure 2. tW = 100 µs 2.0 20 15 10 7 5 4 3 VF VT 2 1.5 1 0.7 TC5LAC 75 100 125 150 NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC5XAD 1.5 70 50 40 30 Normalised Holding Current IT , IF - On-State Current, Forward Current - A 100 50 Figure 3. ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES TA = 25 °C 25 TJ - Junction Temperature - °C TJ - Junction Temperature - °C 200 150 0 1.0 0.9 0.8 0.7 0.6 0.5 1 1.5 2 3 4 5 7 10 VT , VF- On-State Voltage, Forward Voltage - V Figure 4. PRODUCT 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - °C 150 Figure 5. INFORMATION 5 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 TYPICAL CHARACTERISTICS OFF-STATE CAPACITANCE vs OFF-STATE VOLTAGE TC5XAB DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE 300 Vd = 1 Vrms Coff - Capacitance - pF 150 100 90 80 70 60 '5070 '5080 '5110 50 40 '5150 30 20 '5150 '5110 '5080 180 '5070 ∆ C - Differential Off-State Capacitance - pF TJ = 25°C 200 170 160 150 140 ∆ C = Coff(-2 V) - Coff(-50 V) 130 120 110 100 90 80 1 2 3 5 10 20 30 50 VD - Negative Off-state Voltage - V 100 Figure 6. PRODUCT 6 TC5XAE 190 INFORMATION 58 65 80 120 VDRM - Negative Repetitive Peak Off-State Voltage - V Figure 7. TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 RATING AND THERMAL INFORMATION ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI5HAC 30 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) 20 EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 °C 15 10 9 8 7 6 5 4 3 2 1.5 0·1 1 10 100 1000 t - Current Duration - s Figure 8. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE IMPULSE RATING vs AMBIENT TEMPERATURE TI5XAD 1.00 700 600 0.99 IEC 1.2/50, 8/20 400 Impulse Current - A Derating Factor BELLCORE 2/10 500 0.98 0.97 0.96 300 FCC 10/160 250 ITU-T 10/700 200 FCC 10/560 150 0.95 120 0.94 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - °C Figure 9. PRODUCT TC5XAA BELLCORE 10/1000 100 90 80 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 TA - Ambient Temperature - °C Figure 10. INFORMATION 7 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 APPLICATIONS INFORMATION deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two points (Figure 11) or in multiples to limit the voltage at several points in a circuit (Figure 12). SIGNAL AI4XAC R1a R1b TISP5xxxH3BJ - D.C. Figure 11. POWER SUPPLY PROTECTION In Figure 11, the TISP5xxxH3BJ limits the maximum voltage of the negative supply to -V(BO) and +VF. This configuration can be used for protecting circuits where the voltage polarity does not reverse in normal operation. In Figure 12, the two TISP5xxxH3BJ protectors, Th4 and Th5, limit the maximum voltage of the SLIC (Subscriber Line Interface Circuit) outputs to -V(BO) and +VF. Ring and test protection is given by protectors Th1, Th2 and Th3. Protectors Th1 and Th2 limit the maximum tip and ring wire voltages to the ±V(BO) of the individual protector. Protector Th3 limits the maximum voltage between the two conductors to its ±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th3 is not required. OVERCURRENT PROTECTION TIP WIRE RING/TEST PROTECTION TEST RELAY RING RELAY SLIC RELAY SLIC PROTECTION TISP5xxxH3BJ S3a R1a Th1 S1a Th4 S2a SLIC Th3 Th2 RING WIRE Th5 R1b S3b S1b TEST EQUIPMENT S2b VBAT RING GENERATOR AI4XAA Figure 12. LINE CARD SLIC PROTECTION PRODUCT 8 INFORMATION TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 broad-band protection. The star-connection of three TISP5xxxH3BJ protectors gives a protection circuit which has a low differential capacitance to ground (Figure 13). This example, a -100 V ISDN line is protected. In Figure 13, the circuit illustration A shows that protector Th1 will be forward biased as it is connected to the most negative potential. The other two protectors, Th2 and Th3 will be reverse biased as protector Th1 will pull their common connection to within 0.5 V of the negative voltage supply. C0.5 V 600 pF Th1 26 pF 29 pF Th3 26 pF SIGNAL C-99.5 V C-99.5 V 29 pF Th2 A) STAR-CONNECTED U-INTERFACE PROTECTOR - 100 V 1 pF B) EQUIVALENT TISP5150H3BJ CAPACITANCES - 100 V C) DELTA EQUIVALENT SHOWS 25 pF LINE UNBALANCE - 100 V AI4XAB Figure 13. ISDN LOW CAPACITANCE U-INTERFACE PROTECTION Illustration B shows the equivalent capacitances of the two reverse biased protectors (Th2 and Th3) as 29 pF each and the capacitance of the forward biased protector (Th1) as 600 pF. Illustration C shows the delta equivalent of the star capacitances of illustration B. The protector circuit differential capacitance will be 26 - 1 = 25 pF. In this circuit, the differential capacitance value cannot exceed the capacitance value of the ground protector (Th3). A bridge circuit can be used for low capacitance differential. Whatever the potential of the ring and tip conductors are in Figure 14, the array of steering diodes, D1 through to D6, ensure that terminal 1 of protector Th1 is always positive with respect to terminal 2. The protection voltage will be the sum of the protector Th1, V(BO), and the forward voltage of the appropriate series diodes. It is important to select the correct diodes. Diodes D3 through to D6 divert the currents from the ring and tip lines. Diodes D1 and D2 will carry the sum of the ring and tip currents and so conduct twice the current of the other four diodes. The diodes need to be specified for forward recovery voltage, VFRM, under the expected impulse conditions. (Some conventional a.c. rectifiers can produce as much as 70 V of forward recovery voltage, which would be an extra 140 V added to the V(BO) of Th1). In principle the bridge circuit can be extended to protect more than two conductors by adding extra legs to the bridge. RING 1 TIP D1 D3 D5 D2 D4 D6 2 Th1 AI5XAC Figure 14. LOW CAPACITANCE BRIDGE PROTECTION CIRCUIT PRODUCT INFORMATION 9 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 ISDN device selection The ETSI Technical Report ETR 080:1993 defines several range values in terms of maximum and minimum ISDN feeding voltages. The following table shows that ranges 1 and 2 can use a TISP5110H3BJ protector and ranges 3 to 5 can use a TISP5150H3BJ protector. FEEDING VOLTAGE STANDOFF VOLTAGE RANGE MINIMUM MAXIMUM V V 1 51 69 2 66 70 3 91 99 4 90 110 5 105 115 DEVICE # VDRM V -80 TISP5110H3BJ -120 TISP5150H3BJ impulse testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. STANDARD GR-1089-CORE PEAK VOLTAGE VOLTAGE PEAK CURRENT CURRENT TISP5xxxH3 SERIES SETTING WAVE FORM VALUE WAVE FORM 25 °C RATING RESISTANCE Ω V µs A µs A 2500 2/10 500 2/10 500 1000 10/1000 100 10/1000 100 0 1500 10/160 200 10/160 250 0 FCC Part 68 800 10/560 100 10/560 160 0 (March 1998) 1500 9/720 † 37.5 5/320 † 200 0 1000 9/720 † 25 5/320 † 200 0 1500 0.5/700 37.5 0.2/310 200 0 5/310 200 0 I3124 ITU-T K20/K21 1500 4000 10/700 37.5 100 † FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator If the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 °C to 85 °C. If the devices are used in a star-connection, then the ground return protector, Th3 in Figure 13, will conduct the combined current of protectors Th1 and Th2. Similarly in the bridge connection (Figure 14), the protector Th1 must be rated for the sum of the conductor currents. In these cases, it may be necessary to include some series resistance in the conductor feed to reduce the impulse current to within the protectors ratings. a.c. power testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used PRODUCT 10 INFORMATION TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure). capacitance The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of -1 V, -2 V and -50 V. The TISP5150H3BJ is also given for a bias of -100 V. Values for other voltages may be determined from Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. In Figure 12, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. For example, the TISP5070H3BJ has a differential capacitance value of 166 pF under these conditions. normal system voltage levels The protector should not clip or limit the voltages that occur in normal system operation. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the maximum normal system voltages. The TISP5150H3BJ, with a VDRM of -120 V, can be used to protect ISDN feed voltages having maximum values of -99 V, -110 V and -115 V (range 3 through to range 5). These three range voltages represent 0.83 (99/120), 0.92 (110/120) and 0.96 (115/120) of the -120 V TISP5150H3BJ VDRM. Figure 9 shows that the VDRM will have decreased to 0.944 of its 25 °C value at -40 °C. Thus the supply feed voltages of -99 V (0.83) and -110 V (0.92) will not be clipped at temperatures down to -40 °C. The -115 V (0.96) feed supply may be clipped if the ambient temperature falls below -21 °C. JESD51 thermal measurement method To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values. PRODUCT INFORMATION 11 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 MECHANICAL DATA SMBJ (DO-214AA) plastic surface mount diode package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB 4,57 4,06 3,94 3,30 2 Index Mark (if needed) 2,40 2,00 1,52 0,76 2,10 1,90 0,20 0,10 2,32 1,96 5,59 5,21 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXBHA PRODUCT 12 INFORMATION TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 MECHANICAL DATA recommended printed wiring footprint. SMB Pad Size 2.54 2.40 2.16 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXBI device symbolization code Devices will be coded as below. Terminal 1 is identified by a bar index mark. DEVICE SYMOBLIZATION CODE TISP5070H3BJ 5070H3 TISP5080H3BJ 5080H3 TISP5110H3BJ 5110H3 TISP5150H3BJ 5150H3 carrier information The carrier for production quantities is embossed tape reel pack. Evaluation quantities will be shipped in the most practical carrier. CARRIER Embossed Tape Reel Pack (3000 Devices are on a Reel) PRODUCT ORDER # TISP5xxxH3BJR INFORMATION 13 TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 MECHANICAL DATA tape dimensions SMB Package Single-Sprocket Tape 4,10 3,90 1,65 1,55 2,05 1,95 1,85 1,65 0,40 MAX. 5,55 5,45 8,10 7,90 ø 1,5 MIN. 0 MIN. Carrier Tape Direction of Feed 12,30 11,70 8,20 MAX. Cover Tape 4,5 MAX. Embossment 20° Index Mark Maximium component rotation Typical component cavity centre line Typical component centre line ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20° within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 ±3,0 mm Reel hub diameter 75 mm MIN. Reel axial hole: 13,0 ±0,5 mm C. 3000 devices are on a reel. PRODUCT 14 INFORMATION MDXXBJ TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998 - REVISED MARCH 1999 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1999, Power Innovations Limited PRODUCT INFORMATION 15