polyfet rf devices F3002 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 300 Watts Gemini Package Style AR TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 500 Watts 0.35 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 36 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Pow er Gain η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 300WATTS OUTPUT ) MAX 12 60 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 4 A, Vds = 28.0 V, F = 100 MHz % Idq = 4 A, Vds = 28.0 V, F = 100 MHz Relative Idq = 4 A, Vds = 28.0 V, F = 100 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdow n Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forw ard Transconductance Rdson MIN TYP MAX 65 UNITS V 1 TEST CONDITIONS Ids = 0.2 A, Vgs = 0V 12 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.6 A, Vgs = Vds 7 Mho Vds = 10V, Vgs = 5V Saturation Resistance 0.1 Ohm Vgs = 20V, Ids = 20 A Idsat Saturation Current 50 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 400 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 40 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 240 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com F3002 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F3A2 DICE CAPACITANCE 1000 Ciss Coss 100 Crss 10 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F3A2 DICE ID & GMVs VG F3A 2 DICE IV 100.00 Id in amps; Gm in mhos 50 45 40 ID IN AMPS 35 30 25 20 15 10 5 Id 10.00 gM 1.00 0.10 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDSINVOLTS Vg=6v vg=8v 14 16 vg=10v S11 AND S22 SMITH CHART 18 20 0 2 4 6 8 10 Vgs in Volts vg=12v PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 1/12/98 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com