POLYFET F3002

polyfet rf devices
F3002
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
300 Watts Gemini
Package Style AR
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high F t enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
500 Watts
0.35 o C/W
Maximum
Junction
Temperature
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
36 A
RF CHARACTERISTICS (
SYMBOL
PARAMETER
Gps
Common Source Pow er Gain
η
Drain Efficiency
VSWR
MIN
TYP
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
300WATTS OUTPUT )
MAX
12
60
Load Mismatch Tolerance
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq =
4 A, Vds = 28.0 V, F = 100 MHz
%
Idq =
4 A, Vds = 28.0 V, F = 100 MHz
Relative
Idq =
4 A, Vds = 28.0 V, F = 100 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
Bvdss
Drain Breakdow n Voltage
Idss
Zero Bias Drain Current
Igss
Gate Leakage Current
Vgs
Gate Bias for Drain Current
gM
Forw ard Transconductance
Rdson
MIN
TYP
MAX
65
UNITS
V
1
TEST CONDITIONS
Ids =
0.2 A,
Vgs = 0V
12
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.6 A,
Vgs = Vds
7
Mho
Vds = 10V, Vgs = 5V
Saturation Resistance
0.1
Ohm
Vgs = 20V, Ids = 20 A
Idsat
Saturation Current
50
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
400
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
40
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
240
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com
F3002
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F3A2 DICE CAPACITANCE
1000
Ciss
Coss
100
Crss
10
0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F3A2 DICE ID & GMVs VG
F3A 2 DICE IV
100.00
Id in amps; Gm in mhos
50
45
40
ID IN AMPS
35
30
25
20
15
10
5
Id
10.00
gM
1.00
0.10
0
0
2
4
vg=2v
6
Vg=4v
8
10
12
VDSINVOLTS
Vg=6v
vg=8v
14
16
vg=10v
S11 AND S22 SMITH CHART
18
20
0
2
4
6
8
10
Vgs in Volts
vg=12v
PACKAGE DIMENSIONS IN INCHES
Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com