POWEREX CM800HA-24H

CM800HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Single IGBTMOD™
H-Series Module
800 Amperes/1200 Volts
A
B
U - M4 THD
(2 TYP.)
R
K
P
E
M
G
B
A
S - M8 THD
(2 TYP.)
C
E
Q
J
C
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
G
L
H
T - DIA.
(4 TYP.)
F
N
D
E
E
C
G
E
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
5.12
130.0
L
0.79
20.0
B
4.33±0.01
110.0±0.25
M
0.77
19.5
C
1.840
46.75
N
0.75
19.0
0.61
15.6
D
1.73±0.04/0.02 44.0±1.0/0.5
P
E
1.46±0.04/0.02 37.0±1.0/0.5
Q
0.51
13.0
F
1.42
36.0
R
0.35
9.0
G
1.25
31.8
S
M8 Metric
M8
H
1.18
30.0
T
0.26 Dia.
Dia. 6.5
J
1.10
28.0
U
M4 Metric
M4
K
1.08
27.5
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM800HA-24H is a 1200V (VCES),
800 Ampere Single IGBTMOD™
Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
800
24
197
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM800HA-24H
Units
Junction Temperature
Tj
–40 to +150
°C
Storage Temperature
Tstg
–40 to +125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
800
Amperes
ICM
1600*
Amperes
Collector Current
Peak Collector Current
Diode Forward Current
IF
800
Amperes
Diode Forward Surge Current
IFM
1600*
Amperes
Power Dissipation
Pd
4800
Watts
–
95
in-lb
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
–
26
in-lb
Max. Mounting Torque M4 G-E Terminal Screws
–
13
in-lb
–
1600
Grams
VRMS
2500
Volts
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
–
–
5.0
mA
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 80mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 800A, VGE = 15V
–
2.7
3.6
Volts
IC = 800A, VGE = 15V, Tj = 150°C
–
2.4
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 800A, VGS = 15V
–
4500
–
nC
Diode Forward Voltage
VFM
IE = 800A, VGS = 0V
–
–
3.5
Volts
Min.
Typ.
Max.
Units
–
–
180
nF
–
–
64
nF
Gate Leakage Current
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VGE = 0V, VCE = 10V, f = 1MHz
Reverse Transfer Capacitance
Cres
–
–
36
nF
Resistive
td(on)
–
–
500
ns
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
tr
VCC = 600V, IC = 800A,
–
–
1200
ns
td(off)
VGE1 = VGE2 = 15V, RG = 4.2Ω
–
–
1000
ns
–
–
350
ns
Diode Reverse Recovery Time
trr
tf
IE = 800A, diE/dt = –1600A/µs
–
–
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 800A, diE/dt = –1600A/µs
–
5.9
–
µC
Test Conditions
Min.
Typ.
Max.
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
198
Characteristics
Symbol
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.026
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.058
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.018
°C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
1600
VGE = 20V
1200
11
800
10
400
9
7
VCE = 10V
Tj = 25°C
Tj = 125°C
1200
800
400
8
0
0
0
2
4
6
8
10
4
3
2
1
0
0
4
8
12
16
0
20
400
800
1200
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
104
IC = 1600A
6
IC = 800A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
Tj = 25°C
8
103
102
Cies
102
Coes
101
VGE = 0V
f = 1MHz
IC = 320A
101
8
12
16
0
20
0.8
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
3.2
REVERSE RECOVERY TIME, t rr, (ns)
103
td(off)
t d(on)
tf
102
tr
101
101
2.4
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
102
COLLECTOR CURRENT IC, (AMPERES)
4.0
103
102
100
102
Irr
di/dt = -1600A/µsec
Tj = 25°C
101
101
102
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
103
t rr
Cres
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
104
103
1.6
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
4
100
10-1
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
0
1600
103
Tj = 25°C
0
SWITCHING TIME, (ns)
VGE = 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12
15
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
1600
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
IC = 800A
VCC = 400V
16
12
VCC = 600V
8
4
0
0
1
2
3
4
5
6
GATE CHARGE, QG, (µC)
199
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
10-2
10-1
100
101
100
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.026°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
200
101
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
10-2
10-1
100
101
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.058°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3