VISHAY TB9414VA-SF-F

TB9414VA
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
FEATURES
• Package type: chip
-
• Package form: single chip
• Technology: double hetero
• Dimensions chip (L x W x H in mm): 0.37 x 0.37
x 0.19
• Peak wavelength:  = 940 nm
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
21594
DESCRIPTION
TB9414VA is an infrared, 940 nm emitting diode in GaAlAs
double hetero technology with high radiant power and high
speed. Anode is the bond pad on top.
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
TB9414VA
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
4.3
± 80
940
15
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TB9414VA-SF-F
PACKAGING
REMARKS
PACKAGE FORM
Wafer sawn on foil
MOQ: 40 000 pcs
Chip
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Forward current
IF
100
mA
Reverse voltage
VR
5
V
IFSM
1
A
Surge forward current
Junction temperature
TEST CONDITION
tp = 100 μs
Tj
125
°C
Tamb
- 40 to + 100
°C
Storage temperature range chip
Tstg1
- 40 to + 100
°C
Storage temperature range on foil
Tstg2
- 40 to + 50
°C
Operating temperature range
Document Number: 81132
Rev. 1.2, 23-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TB9414VA
Vishay Semiconductors Specification of GaAlAs IR Emitting
Diode Chip
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Forward voltage
PARAMETER
IF = 100 mA
VF
1.1
1.35
1.6
V
Radiant power (1)
IF = 100 mA
e
13.7
21
28
mW
Radiant intensity (2)
IF = 100 mA
Ie
2.8
4.3
5.8
mW/sr
IF = 100 mA
e
29
44
60
mW
IF = 50 mA
e
3.4
5.2
7
mW
IF = 100 mA
TKe
Reverse voltage
IR = 10 μA
VR
Temperature coefficient of forward
voltage
IF = 1 mA
TKVF
Radiant power
(epoxy encapsulated)
Radiant power chip
(3)
Temperature coefficient of radiant
power
UNIT
- 0.51
5
%/K
17
50
V
- 1.8
mV/K
Angle of half intensity
IF = 100 mA

Peak wavelength
IF = 30 mA
p
920
940
960
nm
Spectral bandwidth
IF = 30 mA
0.5
15
25
45
nm
Rise time/fall time
IF = 100 mA
tr, tf
7
15
25
ns
> ± 80
deg
Notes
(1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating
(2) The radiant intensity, I , is measured on the geometric axis of the TO-18 header
e
(3) The radiant power,  , is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer
e
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ϕe rel - Relative Radiant Power
1.25
- 70°
- 80°
90°
80°
70°
- 60°
1.0
60°
- 50°
50°
40°
- 40°
0.75
- 30°
0.5
30°
- 20°
20°
10°
- 10°
0.25
0
750
0°
100
800
850
900
950
1000 1050 1100
21630
0°
50
0
50
100
Relative Angular Intensity
λ - Wavelength (nm)
21632
Fig. 1 - Relative Spectral Emission
e rel = f ()
Fig. 2 - Radiant Characteristics
Irel = f()
DIMENSIONS
Sectional view (schematic):
Electrode pattern:
P (anode) side
N (cathode) side
anode
P
N
typ. 185 µm
substrate
Fig. 1
www.vishay.com
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For technical questions, contact: [email protected]
Document Number: 81132
Rev. 1.2, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TB9414VA
Specification of GaAlAs IR Emitting Vishay Semiconductors
Diode Chip
MECHANICAL DIMENSIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Length of chip edge (x-direction)
Lx
0.37
Length of chip edge (y-direction)
Ly
0.37
mm
Emission area
AE
0.325 x 0.325
mm2
Die height
H
0.19
mm
Diameter of bondpad
d
0.11
mm
ADDITIONAL INFORMATION
mm
(1)
Frontside metallization, anode
Aluminum
Backside metallization, cathode
Gold alloy
Dicing
Sawing
Die bonding technology
Epoxy bonding
Note
(1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
Document Number: 81132
Rev. 1.2, 23-Mar-11
For technical questions, contact: [email protected]
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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