TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip (L x W x H in mm): 0.37 x 0.37 x 0.19 • Peak wavelength: = 940 nm • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 21594 DESCRIPTION TB9414VA is an infrared, 940 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. PRODUCT SUMMARY COMPONENT TB9414VA Ie (mW/sr) (deg) p (nm) tr (ns) 4.3 ± 80 940 15 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TB9414VA-SF-F PACKAGING REMARKS PACKAGE FORM Wafer sawn on foil MOQ: 40 000 pcs Chip Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Forward current IF 100 mA Reverse voltage VR 5 V IFSM 1 A Surge forward current Junction temperature TEST CONDITION tp = 100 μs Tj 125 °C Tamb - 40 to + 100 °C Storage temperature range chip Tstg1 - 40 to + 100 °C Storage temperature range on foil Tstg2 - 40 to + 50 °C Operating temperature range Document Number: 81132 Rev. 1.2, 23-Mar-11 For technical questions, contact: [email protected] www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. Forward voltage PARAMETER IF = 100 mA VF 1.1 1.35 1.6 V Radiant power (1) IF = 100 mA e 13.7 21 28 mW Radiant intensity (2) IF = 100 mA Ie 2.8 4.3 5.8 mW/sr IF = 100 mA e 29 44 60 mW IF = 50 mA e 3.4 5.2 7 mW IF = 100 mA TKe Reverse voltage IR = 10 μA VR Temperature coefficient of forward voltage IF = 1 mA TKVF Radiant power (epoxy encapsulated) Radiant power chip (3) Temperature coefficient of radiant power UNIT - 0.51 5 %/K 17 50 V - 1.8 mV/K Angle of half intensity IF = 100 mA Peak wavelength IF = 30 mA p 920 940 960 nm Spectral bandwidth IF = 30 mA 0.5 15 25 45 nm Rise time/fall time IF = 100 mA tr, tf 7 15 25 ns > ± 80 deg Notes (1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating (2) The radiant intensity, I , is measured on the geometric axis of the TO-18 header e (3) The radiant power, , is measured with chip on bare plate and aperture angle about 30°, as indicated on the label of each wafer e BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ϕe rel - Relative Radiant Power 1.25 - 70° - 80° 90° 80° 70° - 60° 1.0 60° - 50° 50° 40° - 40° 0.75 - 30° 0.5 30° - 20° 20° 10° - 10° 0.25 0 750 0° 100 800 850 900 950 1000 1050 1100 21630 0° 50 0 50 100 Relative Angular Intensity λ - Wavelength (nm) 21632 Fig. 1 - Relative Spectral Emission e rel = f () Fig. 2 - Radiant Characteristics Irel = f() DIMENSIONS Sectional view (schematic): Electrode pattern: P (anode) side N (cathode) side anode P N typ. 185 µm substrate Fig. 1 www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81132 Rev. 1.2, 23-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TB9414VA Specification of GaAlAs IR Emitting Vishay Semiconductors Diode Chip MECHANICAL DIMENSIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Length of chip edge (x-direction) Lx 0.37 Length of chip edge (y-direction) Ly 0.37 mm Emission area AE 0.325 x 0.325 mm2 Die height H 0.19 mm Diameter of bondpad d 0.11 mm ADDITIONAL INFORMATION mm (1) Frontside metallization, anode Aluminum Backside metallization, cathode Gold alloy Dicing Sawing Die bonding technology Epoxy bonding Note (1) All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870. The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip backside is performed with stereo microscope with incident light and 40x to 80x magnification. The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure by QM is not installed. HANDLING AND STORAGE CONDITIONS • The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only. It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment. • Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263. • Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used. PACKING Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for packing material that is returned unsorted or which we are not obliged to accept. Document Number: 81132 Rev. 1.2, 23-Mar-11 For technical questions, contact: [email protected] www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1