RF2119 Preliminary 2 HIGH EFFICIENCY 2V POWER AMPLIFIER Typical Applications • Two-Way Pagers • 3V AMPS/ETACS Cellular Handsets • 915MHz ISM Band Equipment • CDPD Portable Data Cards • Spread-Spectrum Systems • Personal Digital Cellular POWER AMPLIFIERS 2 Product Description The RF2119 is a high-power, high-efficiency amplifier IC targeting 2V to 4V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 960MHz band. The device is well suited for either CW or pulsed applications. At 3V, the RF2119 can deliver 29.5dBm of linear output power. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground. -A3.90 ± 0.10 Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 0.05 ± 0.05 3 0.635 4.90 ± 0.10 6.00 ± 0.20 Exposed 3 Heat Sink 2.70 ± 0.10 1.40 ± 0.10 1.70 ± 0.10 8° MAX 0° MIN 0.60 ± 0.15 Optimum Technology Matching® Applied Si BJT 0.25 ± 0.05 0.24 0.20 Package Style: PSSOP-16 Features • Single 2V to 5V Supply 16 BIAS2 GND 1 15 NC LMATCH 2 • 30dBm Output Power at 2.5V • 30dB Small Signal Gain GND 3 14 RF OUT VCC 4 13 RF OUT • On-board Power Down Mode GND1 5 12 RF OUT • 800MHz to 960MHz Operation RF IN 6 11 NC 10 NC GND 7 BIAS1 8 BIAS CIRCUITS 9 VPC PACKAGE BASE GND Functional Block Diagram Rev A8 010720 • 53% Efficiency Ordering Information RF2119 RF2119 PCBA High Efficiency 2V Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-55 RF2119 Preliminary Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage Control Voltage (VPC) POWER AMPLIFIERS 2 Input RF Power CW Dissipated Power Peak Dissipated Power Operating Case Temperature Storage Temperature Parameter Rating Unit +8.0 +5.2 +3.0 VDC VDC VDC +12 1.8 2.5 -30 to +110 -30 to +150 dBm W W °C °C Specification Min. Typ. Max. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =2.5V, VPC =2.2V, Freq=902MHz, PIN =2dBm Overall Usable Frequency Range Small Signal Gain Maximum CW Output Power Maximum Pulsed Output Power Total CW Efficiency Pulsed Efficiency Input Power OFF Isolation Second Harmonic Suppression Third Harmonic Suppression Input VSWR Output Load VSWR 800 29.5 31 32.5 30 31.5 33 45 47 0 902 30 30.5 32 33.5 29.3 31 33 34 51 53 +2 -25 960 31.5 34 35 MHz dB dBm dBm dBm dBm 32 34.5 35.5 +6 45 >60 % % dBm dBm <2:1 824 to 849 Efficiency @ Maximum Output Power Idle Current IPC @ Maximum Output Power 2-56 VPC =0V, Input Power=+6dBm MHz dBm % 30.5 50 250 mA dBc mA T=25°C, VCC =3.5V, VPC =1.6V, Freq=836MHz, PIN =+8dBm (see AMPS application schematic) AMPS Application #2 Frequency Maximum Output Power 12.5% duty cycle With a 50Ω source impedance No damage. T=25°C, VCC =3.4V, VPC =1.8V, Freq=836MHz, PIN =+3dBm 10:1 195 -45 760 Supply Voltage=2.5V Supply Voltage=3.0V Supply Voltage=3.5V Supply Voltage=2.0V Supply Voltage=2.5V, 12.5% duty cycle Supply Voltage=3.0V, 12.5% duty cycle Supply Voltage=3.5V, 12.5% duty cycle dBc dBc AMPS Application #1 Frequency Maximum Output Power Efficiency @ Maximum Output Power Idle Current Second Harmonic Suppression Current Total Condition 29.5 30.8 824 to 849 30.5 31.5 MHz dBm dBm 32 50 33 55 dBm % 120 20 mA mA VCC =2.7V VCC =3.0V VCC =3.5V Rev A8 010720 RF2119 Preliminary Parameter Specification Min. Typ. 0.2 2.0 0.5 2.2 30 Max. Unit Condition Power Down Control 100 10 ns V V mA µA 5.0 1200 V V mA 2.8 VPC =2.2V Standby, VPC =0.5V 2 POWER AMPLIFIERS Turn On/Off Time VPC “OFF” Voltage VPC “ON” Voltage IPC “ON” Current IPC “OFF” Current Power Supply Voltage Voltage Current Total Rev A8 010720 2.5 2.0 700 900 Specifications Operating Limits VCC =2.5V, VPC =2.2V, PIN =+3dBm, T=25° C 2-57 RF2119 POWER AMPLIFIERS 2 Pin 1 2 Function GND LMATCH 3 4 GND VCC1 5 GND1 6 RF IN 7 8 GND BIAS1 9 VPC 10 11 12 NC NC RF OUT 13 14 15 16 RF OUT RF OUT NC BIAS2 Pkg Base GND 2-58 Preliminary Description Interface Schematic Ground externally. Interstage tuning. This pin is internally DC blocked and will connect to a shunt inductor or microstrip line used for interstage tuning. Length from pin to via should be approximately 60mils for 915MHz and 75mils for 902MHz and 120mils for 836MHz. The lumped element equivalent is 1.2nH to 2.0nH to ground, depending on frequency band of interest. Ground externally. Power supply for stage 1. VCC should be fed through a 3.9nH inductor with a decoupling capacitor on the VCC side. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. RF input. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground externally. Ground return for the first stage bias. This pin should be connected to a 33nH inductor to ground. Power control voltage. For maximum power, this voltage should be at least 2.2V. To turn off, this voltage should be less than 0.6V. This pin should be bypassed as close to the pin as practical. No connection. No connection. RF output and power supply for the output stage. The bias for the output stage is provided through this pin and pin 13. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 12. Same as pin 12. No connection. Ground return for the second stage bias. This pin should be connected to a 33nH inductor to ground. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Rev A8 010720 RF2119 Preliminary Application Schematic 902MHz to 928MHz (VCC =2.5V) 33 nH 16 VCC VCC 22 nH 60 mils 2 15 3 14 4 13 5 12 6 11 3.3 µF 22 nH 1 nF 2 POWER AMPLIFIERS 1 33 pF 3.9 nH 33 pF 1.8 nH 33 pF 33 pF RF IN 7 33 nH 8 RF OUT 12pF 5.6 pF 10 BIAS CIRCUITS VPC 9 33 pF PACKAGE BASE AMPS Application Schematic 824MHz to 849MHz (VCC =3.5V) 33 nH 1 16 VCC VCC 22 nH 120 mils 2 15 3 14 4 13 5 12 6 11 3.3 µF 22 nH 1 nF 33 pF 15 nH 2 pF 2 pF RF IN 12 nH 7 33 nH 8 RF OUT 10 pF 6 pF 10 BIAS CIRCUITS PACKAGE BASE Rev A8 010720 33 pF 2.2 nH 33 pF VPC 9 33 pF 2-59 RF2119 Preliminary Evaluation Board Schematic 824MHz to 928MHz (VCC =3.5V) (Download Bill of Materials from www.rfmd.com.) P1 P2 2 POWER AMPLIFIERS P1-3 1 VPC 1 GND 2 GND 2 GND 3 GND 3 VCC Drawing 2119400L1 33 nH 1 16 2 15 L5 22nH 60-120 mils L2 P1-1 3 14 4 13 5 12 P1-1 C7 33 pF L6 22 nH C8 1 nF C9 3.3 µF 3.9 nH P1-1 C6 33 pF C1 33 pF RF IN 6 L3 33 nH 11 7 8 2-60 RF OUT C4 12pF C5 5.6 pF C3 33 pF C10 1 nF 10 BIAS CIRCUITS PACKAGE BASE PCB mat'l: FR-4; Two Layer: (31 mils; w/plating) C2 33 pF L4 1.8 nH P1-3 9 Off of Pin 2: 60 mil microstrip line for 902 MHZ to 928 MHz and 75 mil microstrip line for 890 MHZ to 915 MHz and 120 mil for 824 MHz to 849 MHz. Lumped element off of Pin 2 would be 1.2 nH to 2.0 nH to ground depending on frequency band of interest. Rev A8 010720 RF2119 Preliminary Evaluation Board Layout 1.020” x 1.020” POWER AMPLIFIERS 2 Rev A8 010720 2-61 RF2119 Preliminary POWER AMPLIFIERS 2 2-62 Rev A8 010720