RF3120 Preliminary 2 3V 1800MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA Korean-PCS Handsets • Spread-Spectrum Systems POWER AMPLIFIERS 2 Product Description The RF3120 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spreadspectrum systems, and other applications in the 1750MHz to 1780MHz band. The RF3120 has a digital bias control voltage for low current in standby mode. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 3.000 0.100 0.800 sq typ 1.700 4.390 6.0 sq 2.500 0.100 NOTE: Nominal thickness, 1.55 mm. 0.600 Dimensions in mm. Package Style: LGM (6mmx6mm) Features • Input/Output Internally Matched @ 50 Ω VCC1 1 7 GND • Single 3V Supply • 29dBm Linear Output Power • 26dB Linear Gain 2 VREG 3 4 6 RF OUT 5 VCC2 VMODE RF IN • 32% Linear Efficiency Ordering Information RF3120 RF3120 PCBA Functional Block Diagram Rev A0 010906 3V 1800MHz Linear Amplifier Module Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-257 RF3120 Preliminary Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Rating Unit Supply Voltage (RF off) Supply Voltage (POUT ≤29dBm) Control Voltage (VREG) +8.0 +4.5 +4.2 VDC VDC VDC Mode Voltage (VMODE) Input RF Power Operating Ambient Temperature Storage Temperature +3.5 +10 -30 to +85 -30 to +150 VDC dBm °C °C Parameter Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25°C, VCC =3.4V, VREG =2.8V, VMODE =2.8V, Freq=1750MHz to 1780MHz unless otherwise specified Overall Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output VSWR Condition 1750 22 1780 26 -35 -40 29 30 32 -44 MHz dB dBc dBc dBm % dBc ACPR @ 1250kHz <2:1 10:1 6:1 8 -95 Noise Figure Noise Power No damage. No oscillations. dB dBm/30kHz At 90MHz offset. Power Supply Power Supply Voltage Quiescent Current VREG Current Turn On/Off Time Total Current (Power down) VREG “Low” Voltage VREG “High” Voltage 2-258 3.2 2.7 3.4 100 0 2.8 4.5 6 40 10 0.2 2.9 V mA mA µs µA V V Pin 3, VREG =2.8V VREG =low Rev A0 010906 RF3120 Preliminary Function VCC1 2 3 4 RF IN VREG VMODE 5 VCC2 6 RF OUT 7 GND Pkg Base GND Rev A0 010906 Description Interface Schematic First stage collector supply. A low frequency decoupling capacitor (e.g., 4.7µF) is required. RF input internally matched to 50Ω. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. For nominal operation, VMODE is set to HIGH. When set LOW: VMODE will increase the bias current by approximately 50%; and, large signal gain is increased by approximately 1.5dB. Output stage collector supply. A low frequency decoupling capacitor (e.g., 4.7µF) is required. RF output internally matched to 50Ω. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. 2 POWER AMPLIFIERS Pin 1 2-259 RF3120 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) C19 + 4.7 µF 2 POWER AMPLIFIERS VCC1 J1 RF IN VREG 1 7 2 6 50 Ω µstrip 50 Ω µstrip 3 4 C20 1 µF J2 RF OUT 5 C1 4.7 µF 3120400- + VMODE 2-260 VCC2 Rev A0 010906 RF3120 Preliminary Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.028”, Board Material FR-4 POWER AMPLIFIERS 2 Rev A0 010906 2-261 RF3120 Preliminary POWER AMPLIFIERS 2 2-262 Rev A0 010906