RF2163 Preliminary 2 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment • Wireless LAN Systems • Broadband Spread-Spectrum Systems 2 POWER AMPLIFIERS • 2.5GHz ISM Band Applications Product Description 2 The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. The device is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line. 0.45 0.28 3.75 1 0.80 TYP 1 0.75 0.50 3.75 + 1.60 4.00 12° 1.50 SQ INDEX AREA 3 3.20 4.00 0.75 0.65 1.00 0.90 0.05 0.00 NOTES: 1 Shaded Pin is Lead 1. 2 Dimensions in mm. Dimension applies to plated terminal and is measured between 0.10 mm and 0.25 mm from terminal tip. The terminal #1 identifier and terminal numbering convention 3 shall conform to JESD 95-1 SPP-012. Details of terminal #1 identifier are optional, but must be located within the zone indicated. The identifier may be either a mold or marked feature. 4 5 Optimum Technology Matching® Applied ! Si BJT GaAs MESFET SiGe HBT Si CMOS Package Style: LCC, 16-Pin Features VCC VCC1 VCC1 NC • Single 3.3V Power Supply GND Si Bi-CMOS GaAs HBT Pins 1 and 9 are fused. Package Warpage: 0.05 max. 1 16 15 14 13 • +30dBm Saturated Output Power • 19dB Small Signal Gain RF IN 2 12 RF OUT • High Power Added Efficiency BIAS GND2 3 11 RF OUT • Patent Pending Power Sense Technology PWR SEN 4 10 RF OUT Functional Block Diagram Rev A2 001221 • 1800MHz to 2500MHz Frequency Range 9 GND 8 BIAS GND 1 7 VREG2 6 VREG1 PWR REG 5 Bias Ordering Information RF2163 RF2163 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-249 RF2163 Preliminary Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity Parameter Rating Unit -0.5 to +6.0 -0.5 to 3.3 1000 +15 -40 to +85 -40 to +150 JEDEC Level 3 VDC V mA dBm °C °C Specification Min. Typ. Max. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =3.5V, VPC =2.4V, Freq=2450MHz Overall Frequency Range Maximum Saturated Output Power Efficiency at Max Output Power Maximum Linear Output Power Linear Efficiency Small Signal Gain Reverse Isolation Second Harmonic Adjacent Channel Power Isolation Input Impedance Input VSWR Condition +29 17 1800 to 2500 +30 +32 MHz dBm 37 25 % dBm 25 19 30 30 -35 % dB dB dB dBc -35 -52 TBD 50 2:1 dBc dBm Ω PIN =+13dBm With 802.11 modulation (11Mbit/s) and meeting 802.11 spectral mask. In “ON” state In “OFF” state Including second harmonic trap, see application circuit POUT =25dBm POUT =25dBm In “OFF” state, PIN =TBD Power Down VREG “ON” 2.4 VREG “OFF” 0 V 0.5 V Voltage supplied to control input; device is “ON” Voltage supplied to control input; device is “OFF” Power Supply Operating Voltage Current Consumption 2-250 3.0 to 5.0 650 350 150 V mA mA mA Power Down “ON”, at max output power Power Down “ON”, POUT =25dBm Idle current Rev A2 001221 RF2163 Pin 1 Function GND 2 RF IN 3 BIAS GND2 4 PWR SEN 5 6 PWR REF VREG1 7 8 VREG2 BIAS GND1 9 10 GND RF OUT 11 12 13 14 RF OUT RF OUT NC VCC1 Description Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input. This input is AC coupled, so an external blocking capacitor is not required if this pin is connected to a DC path. Ground for second stage bias circuit. For best performance, keep traces physically short and connect immediately to ground plane. The PWR SEN and PWR REF pins can be used in conjunction with an external feedback path to provide an RF power control function for the RF2163. The power control function is based on sampling the RF drive to the final stage of the RF2163. Same as pin 4. Interface Schematic See pin 14. 2 POWER AMPLIFIERS Preliminary This pin requires a regulated supply to maintain the correct bias current. Same as pin 6. Ground for first stage bias circuit. For best performance connect to ground with a 10nH inductor. Same as pin 1. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Same as pin 10. See pin 10. Same as pin 10. RF OUT See pin 10. Not connected. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. VCC RF IN BIAS 15 16 Pkg Base VCC1 VCC GND Rev A2 001221 Same as pin 14. See pin 14. Same as pin 14. See pin 14. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. See pin 1 and 2. 2-251 RF2163 Preliminary Application Schematic 2400MHz to 2483MHz VCC 10 uF Part is Backside Grounded. 1000 pF 2 POWER AMPLIFIERS 1000 pF 1000 pF 1 6.2 pF 16 15 14 13 15 nH 10 pF 1.5 pF RF IN 2 12 3.0 pF 10 pF 1.5 nH 3 11 Bias 4 5 6 RF OUT TL1 3.0 pF TL2 1.5 pF 10 7 8 9 390 Ω VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V 1000 pF 10 nH 390 Ω 1000 pF 1000 pF 1000 pF PWR SEN 1000 pF 10 uF Transmission Line Length TL1 TL2 WLAN 25 mil 175 mil 10 uF PWR REF VREG1 2-252 VREG2 Rev A2 001221 RF2163 Preliminary Evaluation Board Schematic 2400MHz to 2483MHz (Download Bill of Materials from www.rfmd.com.) P2-4 C4 1000 pF C1 1.5 pF 50 Ω µstrip J1 RF IN L3 1.5 nH 1 16 15 C12 1000 pF C22 10 uF C11 6.2 pF C10 1000 pF 14 13 2 12 3 11 C5 3.0 pF Bias 5 C2 1000 pF R2 390 Ω C15 1000 pF P1-3 6 7 8 9 50 Ω µstrip VREG1 = 2.4 V VREG2 = 2.4 V VCC = 3.5 V L2 10 nH R1 390 Ω C16 1000 pF C3 1000 pF C21 10 uF P1-1 C20 10 uF P2-2 P2 P1 C13 1000 pF P1-3 1 PS REF 2 GND 3 PWR SENSE P2-1 1 VREG2 P2-2 2 VREG1 3 GND 4 VCC P2-4 P2-1 Transmission Line Length TL1 TL2 WLAN 25 mil 175 mil J2 RF OUT C7 1.5 pF C6 3.0 pF P1-1 Rev A2 001221 TL2 10 2163400- C9 10 pF C8 10 pF TL1 4 L1 15 nH 2 POWER AMPLIFIERS Part is Backside Grounded. 2-253 RF2163 Preliminary Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.028”, Board Material FR-4 POWER AMPLIFIERS 2 2-254 Rev A2 001221