RF2145 2 DCS1800/1900 POWER AMPLIFIER Typical Applications • Commercial and Consumer Systems • 3V DECT Handsets and Base Stations • Portable Battery Powered Equipment 2 POWER AMPLIFIERS • 4.8V DCS1800/1900 Handsets Product Description The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in a 4-cell DCS1800 or DCS1900 handset. The device is packaged in a 16-lead plastic package with wide ground leads, and is self-contained with the exception of the output matching network and power supply feed line. Only a single positive voltage is required to operate with full power and efficiency, and on-board power control and power-down functions are provided. .158 .150 Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS .020 .014 .069 .064 1 .392 .386 .050 .244 .230 .059 .054 8°MAX 0°MIN .035 .016 Optimum Technology Matching® Applied .009 .004 .010 .008 Package Style: SOP-16 QBW1 Features • Single 4.8V Power Supply PC 1 16 NC • +32dBm Output Power GND 2 15 GND • 28dB Small Signal Gain GND 3 14 GND • 55% Power Added Efficiency VCC1 4 13 RF OUT • Power Control RF IN 5 12 RF OUT • 1700MHz to 1900MHz Frequency Range GND 6 11 GND GND 7 10 GND NC 8 9 NC Functional Block Diagram Rev B5 010329 Ordering Information RF2145 RF2145 PCBA DCS1800/1900 Power Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-141 RF2145 Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Rating Unit -0.5 to +7.5 -0.5 to +3.0 675 +12 5:1 -40 to +85 -40 to +150 VDC V mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit T=25 °C, VCC =4.8V, VPC =2.5V, PIN =+8dBm, Freq=1750MHz Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Input Power for Max Output Input Intermodulation Distortion Output Noise Power in Receive Band Isolation Second Harmonic Third Harmonic Input Impedance Input VSWR Output Load VSWR Condition 1710 to 1785 1850 to 1910 1700 to 1990 +32 55 +8 -57 MHz MHz dBm % dBm dBc -48 dBc -137 dBm/Hz -25 -48 <-60 50 dBm dBc dBc Ω 3.8:1 1/8 Duty cycle with 600µs pulse width At maximum output power Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -42dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -32dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Any gain setting In “OFF” state, PIN =+8dBm Worst-case across the band. Using evaluation board; can be different with other layouts Spurious<-60dBc 3:1 Power Control Power Control “ON” Power Control “OFF” Current into PC Input 0.2 2.5 0.5 15 3.0 10 Power Control Range Turn On/Off TIme 45 100 V V mA µA dB ns Threshold voltage Threshold voltage In “ON” state In “OFF” state V V mA µA Specifications Operating limits DC Current at maximum output power VPC =0.5V Power Supply Power Supply Voltage 4.8 2.7 Power Supply Current 6.5 550 10 2-142 Rev B5 010329 RF2145 Function PC 2 GND 3 4 GND VCC1 Description Power control pin. This also provides power down when VPC is less than +0.5V. Full power is achieved at 2.5V, and >45dB of gain control is obtainable over the full range. Approximately 15mA current is drawn into this pin at full power. Interface Schematic To RF Stages PC Ground connection. This pin should be connected to the ground plane through a short path and may be combined with the ground plane from Pins 3, 6, 7, 10, 11, 14, and 15. All four of these wide leads are tied together internally to provide a low-inductance and low thermal resistance path to external ground. Ground vias should be placed as close as possible to each ground lead. Same as pin 2. 2 Power supply pin for the first stage. Also provides tuning for interstage match. POWER AMPLIFIERS Pin 1 VCC1 RF IN From Bias Stages 5 RF IN 6 7 8 9 10 11 12 GND GND NC NC GND GND RF OUT RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. Same as pin 2. See pin 4 schematic. Same as pin 2. No connection. No connection. Same as pin 2. Same as pin 2. RF output pin. Bias is also fed to the final stage through this wide lead. External matching is most easily achieved with a series transmission line and shunt capacitors, as shown in the application schematic. RF OUT From Bias Stages 13 14 15 16 RF OUT GND GND NC Rev B5 010329 Same as pin 12. Same as pin 2. Same as pin 2. No connection. 2-143 RF2145 Application Schematic DCS 1800 POWER AMPLIFIERS 2 470 pF PC 470 Ω 33 pF 1 16 2 15 3Ω 2.0 pF 14 3 µstrip 22 nH VCC 33 pF VCC2 50 Ω µstrip 3.3 pF 4 13 5 12 6 11 7 10 8 9 100 pF 270 Ω 33 pF 33 pF 18 Ω RF IN 50 Ω µstrip 50 Ω µstrip 33 pF RF OUT 3.0 pF 1.1 pF 2.7 nH Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) C6 470 pF PC J1 R2 470 Ω C2 1 µF C10 1 nF C13 33 pF R4 3Ω C5 2.0 pF L2 22 nH 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC2 C1 33 pF RF IN J1 C8 33 pF R3 270 Ω R1 18 Ω C7 100 pF L1 2.7 nH P1 NC P1-3 2-144 P2 1 NC 2 GND 3 VCC P2-3 VCC C12 33 pF C23 10 µF C29 3.3 pF C25 1 nF C4 33 pF C26 3.0 pF RF OUT J2 C9 1.1 pF 1 2 GND 3 VCC2 2145400- Rev B5 010329 RF2145 Evaluation Board Layout 2” x 2” POWER AMPLIFIERS 2 Rev B5 010329 2-145 RF2145 POWER AMPLIFIERS 2 2-146 Rev B5 010329