RF3160 Preliminary 2 DUAL-BAND GSM/DCS POWER AMP MODULE Typical Applications • GPRS Compatible • Commercial and Consumer Systems • GSM, E-GSM and DCS Products 2 • Portable Battery-Powered Equipment Product Description The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx11mm) LCC, minimizing the required board space. Optimum Technology Matching® Applied SiGe HBT üSi CMOS VAPC ü 0.450 ±0.075 1 1.910 TYP 0.760 TYP 9.09 ±0.10 4.520 FULL RADIUS TYP R0.860 TYP Dimensions in mm. All contact points are gold-plated, lead-free surfaces. Side View 0.920 TYP 11.61 ± 0.10 NOTES: Bottom View 1. Shaded area is pin 1. 2. All dimensions without specific tolerances are for reference only. Package Style: Module (9mm x11mm) GaAs MESFET GND Si Bi-CMOS GaAs HBT BAND SELECT Si BJT 1.40 1.25 7.040 16 15 14 Features • Single 2.8V to 5.0V Supply Voltage • +35.0dBm GSM Output Power at 3.2V • +32.5dBm DCS Output Power at 3.2V 13 GND GND 1 12 DCS OUT DCS IN 2 GND 3 • 55% GSM and 50% DCS Efficiency • Internal Band Select 11 GND 10 GSM OUT GSM IN 4 9 GND 6 7 8 VCC GND VCC GND 5 Functional Block Diagram Rev A4 010420 Ordering Information RF3160 RF3160 PCBA Dual-Band GSM/DCS Power Amp Module Fully Assembled Evaluation Board RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-261 POWER AMPLIFIERS • 3V Dual-Band GSM/DCS Handsets RF3160 Preliminary Absolute Maximum Ratings Parameter POWER AMPLIFIERS 2 Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Parameter Rating Unit -0.5 to +5.0 -0.5 to +3.0 2400 +15 50 6:1 -30 to +85 -30 to +85 VDC V mA dBm % °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Temp=+25°C, VCC =3.2V, VAPCGSM =1.9V, PIN =6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, Pulse Width=1154µs Overall (GSM Mode) Operating Frequency Range Maximum Output Power PAE Efficiency Input Power for Max Output Output Noise Power Forward Isolation Cross-Band Isolation Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR (Stability) Output Load VSWR (Ruggedness) Condition 34.5 50 +6 880 to 915 35.0 55 +8 +10 -72 MHz dBm % dBm dBm -84 dBm -40 -15 -7 -7 -7 dBm dBm dBm dBm dBm Temp = 25°C, VCC =3.2V, VAPCGSM =1.9V At POUT,MAX, VCC =3.2V RBW=100kHz, 925MHz to 935MHz, POUT >34.5dBm RBW=100kHz, 935MHz to 960MHz, POUT >34.5dBm VAPCGSM =0.1V, PIN =-5dBm POUT >34.5dBm 5dBm<POUT <34.5dBm Ω 50 3:1 6:1 10:1 Output Load Impedance Ω 50 Spurious<-36dBm, VAPCGSM =0.1V to 1.9V, RBW=3MHz PIN =6dBm, POUT <34.5dBm, VCC =4.6V, ZS =50Ω Load impedance presented at RF OUT pad Power Control VAPC1 Power Control “ON” Power Control “OFF” Power Control Range Gain Control Slope APC Input Capacitance APC Input Current 1.8 0.1 60 1.9 0.5 2.8 V V Max. POUT Min. POUT VAPC1,2 =0.1V to 1.9V POUT =-10dBm to 34.5dBm DC to 2MHz VAPC =1.9V VAPC =0V VAPC =0V to 1.9V GSM DCS 5.0 4.7 V V Specifications Nominal operating limits, POUT <+34.5dBm 30 A µA DC Current at POUT,MAX VAPC1,2 =0.1V. No RF input power. 100 Turn On/Off Time Band Select 10 1 10 2 V V dB dB/V pF mA µA µS 0.5 0 2 Overall Power Supply Power Supply Voltage Power Supply Current 2-262 2.8 2.9 3.2 2 Rev A4 010420 RF3160 Preliminary Specification Min. Typ. Max. Unit Temp=25°C, VCC =3.2V, VAPCDCS =1.9V, PIN =6dBm, Freq=1710MHz to 1785MHz, 25% Duty Cycle, pulse width=1154µs Overall (DCS Mode) Operating Frequency Range Maximum Output Power 31.9 1710 to 1785 32.5 MHz dBm PAE Efficiency 42 50 % Recommended Input Power Range Output Noise Power +6 +8 +10 dBm -80 -76 dBm -48 -7 -7 -7 dBm dBm dBm dBm Forward Isolation Second Harmonic Third Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR Output Load VSWR (Stability) Output Load VSWR (Ruggedness) Condition Temp=25°C, VCC =3.2V, VAPCDCS =1.9V, 1710MHz to 1785MHz At POUT,MAX, VCC =3.2V, 1710MHz to 1785MHz RBW =100kHz, 1805MHz to 1880MHz, POUT > 32.5dBm, VCC =3.2V VAPCDCS =0.1V, PIN =-5dBm 0dBm<POUT <32.5dBm Ω 50 3:1 6:1 10:1 Output Load Impedance Ω 50 Spurious <-36dBm, VAPCDCS =0.1V to 1.9V, RBW =3MHz PIN =6dBm, POUT <31.9dBm, VCC =4.6V, ZS =50Ω Load impedance presented at RF OUT pin Power Control VAPC 2 Power Control “ON” Power Control “OFF” Power Control Range Gain Control Slope APC Input Capacitance APC Input Current 1.8 0.1 60 1.9 0.5 100 10 1 10 100 Turn On/Off TIme V V dB dB/V pF mA µA ns Max. POUT Min. POUT VAPC1,2 =0.1V to 1.9V POUT =-10dBm to +32.5dBm DC to 2MHz VAPC =1.9V VAPC=0V VAPC =0to1.9V Overall Power Supply Power Supply Voltage 3.2 2.9 Power Supply Current 4.7 1.3 30 Rev A4 010420 V V A µA Specifications Nominal operating limits, POUT <+32.5dBm DC Current at POUT,MAX VAPC1,2 =0.1V. No RF input power. 2-263 2 POWER AMPLIFIERS Parameter RF3160 POWER AMPLIFIERS 2 Pin 1 2 Function GND DCS IN 3 4 GND GSM IN 5 6 GND VCC 7 8 GND VCC 9 10 GND GSM OUT 11 12 GND DCS OUT 13 14 15 16 GND VAPC GND BAND SELECT GND Pkg Base 2-264 Preliminary Description Interface Schematic Connects to module backside ground. RF input to the DCS band. This is a 50Ω input, external DC-blocking capacitor required. See application schematic. Connects to module backside ground. RF input to the GSM band. This is a 50Ω input. No external DC-blocking capacitor required. See application schematic. Connects to module backside ground. Power supply for stages 1 and 2 of both the GSM and DCS power amplifiers. External low frequency bypassing capacitor required. See application schematic. Connects to module backside ground. Power supply for output stages of both the GSM and DCS power amplifiers. External low frequency bypassing capacitor required. See application schematic. Connects to module backside ground. RF output for the GSM band. This is a 50Ω output. External DC-blocking capacitor required. See application schematic. Connects to module backside ground. RF output for the DCS band. This is a 50Ω output. External DC-blocking capacitor required. See application schematic. Connects to module backside ground. Single input analog power control voltage for the GSM and DCS band. Connects to module backside ground. Logic low (GSM enable) or logic high (DCS enable) provides single IO band selection. Module backside ground. Rev A4 010420 RF3160 Preliminary Pin Out VAPC 2 3 11 GND GSM IN 4 10 GSM OUT GND 5 9 8 GND VCC DCS OUT 7 12 GND 2 6 GND VCC 13 POWER AMPLIFIERS GND 14 DCS IN 15 1 16 Rev A4 010420 GND BAND SELECT Top View GND 2-265 RF3160 Preliminary Application Schematic BAND SELECT VAPC 16 2 POWER AMPLIFIERS 50 Ω µstrip DCS IN 15 14 1 13 2 12 3 11 4 10 5 9 10 pF 10 pF GSM IN DCS OUT 33 pF 50 Ω µstrip 6 7 50 Ω µstrip 50 Ω µstrip GSM OUT 8 3.3 uF VCC 2-266 Rev A4 010420 RF3160 Preliminary Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.032”, Board Material FR-4, Multi-Layer Assembly Top POWER AMPLIFIERS 2 Inner 1 Rev A4 010420 Back 2-267 RF3160 Preliminary POWER AMPLIFIERS 2 2-268 Rev A4 010420