RFMD RF2363PCBA

RF2363
Preliminary
4
DUAL-BAND 3V LOW NOISE AMPLIFIER
Typical Applications
• GSM/DCS Dual-Band Handsets
• General Purpose Amplification
• Cellular/PCS Dual-Band Handsets
• Commercial and Consumer Systems
Product Description
4
GENERAL PURPOSE
AMPLIFIERS
0.365
TEXT*
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz GSM/
1850MHz DCS applications and may be used for dualband cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent combination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
0.15
0.05
1.59
1.61
2.80
3.00
0.650
2.60
3.00
1.44
1.04
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.127
3°MAX
0°MIN
0.35
0.55
Optimum Technology Matching® Applied
ü
Si BJT
Si Bi-CMOS
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
Package Style: SOT, 8-Lead
Features
• Low Noise and High Intercept Point
• 18dB Gain at 900MHz
• 21dB Gain at 1900MHz
RF OUT1
1
8
RF IN1
• Low Supply Current
GND
2
7
GND
• Single 2.5V to 5.0V Power Supply
RF OUT2
3
6
RF IN2
• Very Small SOT-23-8 Plastic Package
EN1
4
5
EN2
Ordering Information
RF2363
RF2363 PCBA
Functional Block Diagram
Rev B2 010129
Dual-Band 3V Low Noise Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-199
RF2363
Preliminary
Absolute Maximum Ratings
Parameter
Supply Voltage
Input RF Level
Operating Ambient Temperature
Storage Temperature
Parameter
Rating
Unit
-0.5 to +6.0
+10
-40 to +85
-40 to +150
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Min.
Typ.
Max.
Unit
800 to 1000
1800 to 2000
MHz
MHz
Condition
Overall
GENERAL PURPOSE
AMPLIFIERS
4
RF Frequency Range
T = 25°C, RF=950MHz, VCC =2.8V,
EN1=2.8V, EN2=0V
950MHz Performance
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
16
+17
18
16
34
1.3
+24
-10
20
1.8:1
1.8:1
20
dB
dB
dB
dB
dBm
dBm
dB
2:1
2:1
No external matching
With external match as per GSM/DCS Application Schematic
T = 25°C, RF=1850MHz, VCC =2.8V,
EN2=2.8V, EN1=0V
1850MHz Performance
Gain
Isolation
Gain Step
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
20
+16
21.5
10
31.5
1.4
+22
-12
30
1.7:1
1.7:1
24
EN1=0V
Gain - Isolation
dB
dB
dB
dB
dBm
dBm
dB
2:1
2:1
EN2=0V
Gain - Isolation
No external matching
With external match as per GSM/DCS Application Schematic
LNA Select
“Enable” Voltage
“Disable” Voltage
VCC
0
V
V
2.8
2.5 to 5.0
5
V
V
mA
7.5
mA
Power Supply
Voltage
Current Consumption
1
4-200
µA
T = 25 °C
Specifications
Operating limits
900MHz LNA Enabled, 1900MHz LNA Disabled; total DC current
1900MHz LNA Enabled, 900MHz LNA Disabled; total DC current
EN1=EN2=0V
Rev B2 010129
RF2363
Preliminary
2
3
Function
RF OUT1
GND
RF OUT2
4
EN1
5
EN2
6
RF IN2
7
8
GND
RF IN1
Rev B2 010129
Description
RF output pin for ~900MHz LNA. This pin is an open-collector output. It
must be biased to either VCC or pin 4 through a choke or matching
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to application
schematics.
Ground connection.
NOTE: Ground traces on pins 2 and 7 are equivalent to a small amount
of inductance (~0.75nH). The dimensions of these lines are as follows.
Pin 2: L=56mils, W =15mils, H=31mils
Pin 7: L=56mils, W =15mils, H=31mils
Dielectric is FR-4.
RF output pin for ~1900MHz LNA. This pin is an open-collector output.
It must be biased to either VCC or pin 4 through a choke or matching
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to application
schematics.
Enable pin for ~900MHz LNA. A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~1900MHz LNA is in
use.
Enable pin for ~1900MHz LNA. A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~900MHz LNA is in
use. See package drawing for description of pin orientation.
RF input pin for ~1900MHz. This pin is matched to approximately 50Ω
at DCS/PCS frequencies. An external AC coupling capacitor is required
at this pin.
Same as pin 2.
RF input pin for ~900MHz. This pin is matched to approximately 50Ω at
GSM/Cellular frequencies. An external AC coupling capacitor is
required at this pin.
Interface Schematic
RF OUT1
RF IN1
To Bias
Circuits
LNA1
LNA2
Pin 2
Pin 7
EN2
RF OUT2
4
GENERAL PURPOSE
AMPLIFIERS
Pin
1
RF IN2
See pin 3.
See pin 3.
See pin 2.
See pin 1.
4-201
RF2363
Preliminary
RF2363 Theory of Operation and Application Information
GENERAL PURPOSE
AMPLIFIERS
4
The RF2363 contains two independent low noise
amplifiers which have been optimized for dual-band
applications in the GSM (905MHz to 960MHz) and
DCS (1805MHz to 1880MHz) frequency bands. Fabricated using heterojunction bipolar transistor (HBT)
technology, the RF2363 delivers high linear gain at a
very low noise figure and low power consumption.
Internal temperature compensation keeps the gain
tightly controlled over temperature extremes (typically
less than 1dB of gain variation from -40°C to +85°C at
2.8V). A 50Ω input impedance allows the part to be
connected to standard receiver front end filters without
additional matching components.
MODE CONTROL
The RF2363 incorporates two enable pins (EN1 and
EN2) for biasing the desired LNA according to the table
below.
EN1
GND
GND
VCC
EN2
GND
VCC
GND
Mode
Power Down
1900MHz LNA On
900MHz LNA On
900MHz LNA
The 900MHz LNA is a single-stage, common emitter
amplifier. Since the input pin contains a DC bias, an AC
coupling capacitor is required at this pin. An external
bias inductor from the output pin (RF OUT1) to VCC
provides DC biasing for the amplifier transistor and
assists in matching the output impedance to the next
receiver stage. A capacitor having a good RF bypass
characteristic at the frequency of operation should be
placed as close as possible to the supply voltage side
of the bias inductor; a low frequency bypass capacitor
should also be included. The EN1 pin supplies VCC to
the bias circuits of the LNA and should also be effectively bypassed with both low and high frequency
capacitors.
4-202
1900MHz LNA
The 1900MHz LNA is implemented by two common
emitter stages in cascade. The first stage is biased
through an external inductor at the EN2 pin. This
inductor also acts as an interstage match; a resistor in
parallel with the inductor is recommended to 'de-Q' the
inductor, thus providing a broader band interstage
match. An external bias inductor from the output pin
(RF OUT2) to VCC provides DC biasing for the second
stage transistor and assists in matching the output
impedance to the next receiver stage. Low and high
frequency bypass capacitors should be used on the
supply side of both the EN2 and RF OUT2 bias inductors. An AC coupling capacitor is required at the RF
IN2 pin.
LAYOUT CONSIDERATIONS
To provide optimal balance of gain and linearity, a small
amount of inductance is required in the ground traces
of the PCB. The recommended inductance is between
0.5 and 1.0nH, with 0.75nH used on the Evaluation
Board. Depending on the application, more gain with
less linearity or more linearity with less gain may be
desired. Appropriate adjustment of the ground inductance can accomplish these objectives. Minimizing the
ground inductance will maximize the gain at the
expense of linearity while increasing the ground inductance will increase the linearity at the expense of gain.
It is important to remember that the pin 7 ground inductance affects the performance of both LNAs, while the
pin 2 ground inductance affects only the 1900MHz
LNA.
Rev B2 010129
RF2363
Preliminary
Application Schematic (GSM/DCS)
EN1
10 nF
100 pF
EN2
47 pF
10 nF
47 pF
1 kΩ
10 nF
3.9 nH
5
4
RF IN2
6
3
VCC
3.3 nH
22 nF
RF OUT2
1 pF
7
4
2
2 pF
RF IN1
8
1
GENERAL PURPOSE
AMPLIFIERS
22 nF
RF OUT1
12 nH
VCC
Note orientation of
package in this schematic.
100 pF
10 nF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
P2
P2-1
1
VCC
2
GND
P1-1
CON2
P1-3
Note orientation of
package in this schematic.
P1-4
1
EN2
2
GND
3
EN1
4
VCC
CON4
EN1
C9
10 nF
C10
100 pF
EN2
C12
10 nF
J3
RF IN2
C11
47 pF
R1
1 kΩ
50 Ω µstrip
L1
3.9 nH
C1
22 nF
C7
47 pF
U1
VCC
5
4
6
3
7
2
8
1
0.75 nH
J4
RF IN1
L2
3.3 nH
C6
1 pF
50 Ω µstrip
J2
RF OUT2
0.75 nH
50 Ω µstrip
50 Ω µstrip
C2
22 nF
Notes:
Ground traces on pins 2 and 7 are equivalent to a small
amount of inductance (-1 nH). The dimensions of these
lines are as follows.
Pin 2: L = 56 mils, W = 15 mils, H = 31 mils
Pin 7: L = 56 mils, W = 15 mils, H = 31 mils
Dielectric is FR-4
Rev B2 010129
C8
10 nF
L3
12 nH
C5
2 pF VCC
C3
100 pF
J1
RF OUT1
C4
10 nF
4-203
RF2363
Preliminary
Evaluation Board Layout
Board Size 1.0" x 1.0"
Board Thickness 0.031”, Board Material FR-4
GENERAL PURPOSE
AMPLIFIERS
4
4-204
Rev B2 010129
RF2363
Preliminary
Gain versus Frequency
900 MHz LNA
Gain versus Frequency
1900 MHz LNA
19.0
23.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
18.8
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
22.5
18.6
Gain (dB)
Gain (dB)
22.0
18.4
18.2
21.5
21.0
18.0
17.6
925.0
930.0
935.0
940.0
945.0
950.0
955.0
20.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
960.0
Frequency (MHz)
Frequency (MHz)
Noise Figure versus Frequency
900 MHz LNA
Noise Figure versus Frequency
1900 MHz LNA
1.5
2.0
2.8V
1.9
3.2V
1.4
2.8V
3.2V
1.8
Noise Figure (dB)
Noise Figure (dB)
1.7
1.3
1.2
1.6
1.5
1.4
1.3
1.1
1.2
1.1
1.0
925.0
930.0
935.0
940.0
945.0
950.0
955.0
1.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
960.0
Frequency (MHz)
Frequency (MHz)
Input 1 dB Compression Point versus Frequency
900 MHz LNA
Input 1 dB Compression Point versus Frequency
1900 MHz LNA
-6.0
0.0
-2.0
-3.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
-7.0
Input Power at 1 dB Compression (dBm)
Input Power at 1 dB Compression (dBm)
-1.0
-4.0
-5.0
-6.0
-7.0
-8.0
-9.0
-10.0
-11.0
-12.0
-13.0
-9.0
-10.0
-11.0
-12.0
-13.0
-14.0
-15.0
-16.0
-17.0
-14.0
-15.0
925.0
-8.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
930.0
935.0
940.0
945.0
Frequency (MHz)
Rev B2 010129
950.0
955.0
960.0
-18.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
4-205
GENERAL PURPOSE
AMPLIFIERS
4
20.5
17.8
RF2363
Preliminary
Output 3rd Order Intercept Point versus Frequency
900 MHz LNA
Output 3rd Order Intercept Point versus Frequency
1900 MHz LNA
32.0
30.0
31.0
29.0
30.0
28.0
29.0
27.0
28.0
26.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
GENERAL PURPOSE
AMPLIFIERS
4
26.0
25.0
25.0
OIP3 (dBm)
OIP3 (dBm)
27.0
24.0
24.0
23.0
22.0
23.0
21.0
22.0
20.0
21.0
19.0
20.0
18.0
19.0
17.0
18.0
925.0
930.0
935.0
940.0
945.0
950.0
955.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
16.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
960.0
Frequency (MHz)
Frequency (MHz)
Current versus Supply Voltage
900 MHz LNA
Current versus Supply Voltage
1900 MHz LNA
12.0
14.0
900 LNA, -40°C
900 LNA, +25°C
11.0
1900 LNA, -40°C
13.0
1900 LNA, +25°C
900 LNA, +85°C
9.0
11.0
Current (mA)
12.0
Current (mA)
10.0
8.0
7.0
6.0
9.0
8.0
7.0
4.0
6.0
3.0
5.0
4.0
2.5
2.7
2.9
3.1
Supply Voltage (VDC)
4-206
10.0
5.0
2.0
1900 LNA, +85°C
3.3
3.5
2.5
2.7
2.9
3.1
3.3
3.5
Supply Voltage (VDC)
Rev B2 010129
RF2363
Preliminary
0.8
1.0
900MHz LNA
Swp Max
2.5GHz
2.0
0.6
Input impedance
0.
4
Output impedance
3.0
4. 0
5.0
0.2
950 MHz
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
4
950 MHz
GENERAL PURPOSE
AMPLIFIERS
-10.0
-5.0
0
Swp Min
0.5GHz
-1.0
-0.8
-0.
6
.0
-2
-3
.0
0.5 MHz
.4
-0
-4.
-0.2
0.8
1.0
1900MHz LNA
Swp Max
2.5GHz
2.0
0.6
Input impedance
0.
4
Output impedance
3.0
4.0
5.0
0.2
10.0
1850 MHz
5.0
4.0
3.0
1850 MHz
2.0
1.0
0.8
0.6
0.4
0
0.2
10.0
-10.0
0.5 MHz
-5.0
-0.2
-4.
0
-3
.0
.0
-2
4
Rev B2 010129
-1.0
-0.8
-0.
6
.
-0
Swp Min
0.5GHz
4-207
RF2363
Preliminary
GENERAL PURPOSE
AMPLIFIERS
4
4-208
Rev B2 010129