RF3118 Preliminary 2 3V 1900MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA US-PCS Handsets • Compatible with Qualcomm Chipset • 3V CDMA2000/1X PCS Handsets • Spread-Spectrum Systems POWER AMPLIFIERS 2 Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA hand-held digital cellular equipment, spreadspectrum systems, and other applications in the 1850MHz to 1910MHz band. The RF3118 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 3.000 0.100 0.800 sq typ 1.700 4.390 6.0 sq 2.500 0.100 NOTE: Nominal thickness, 1.55 mm. 0.600 Dimensions in mm. Package Style: LGM (6mmx6mm) Features • Input/Output Internally Matched@50 Ω VCC1 1 7 GND • Single 3V Supply • 29dBm Linear Output Power • 27dB Linear Gain RF IN 2 6 RF OUT • 34% Linear Efficiency • 50mA Idle Current 3 4 5 VCC2 VMODE VREG Ordering Information RF3118 RF3118 PCBA Functional Block Diagram Rev A0 011016 3V 1900MHz Linear Amplifier Module Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-273 RF3118 Preliminary Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤29dBm) Control Voltage (VREG) POWER AMPLIFIERS 2 Mode Voltage (VMODE) Input RF Power Operating Case Temperature Storage Temperature Parameter Rating Unit +8.0 +5.2 +4.2 VDC VDC VDC +3.5 +10 -30 to +110 -30 to +150 VDC dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition Typical Performance at VCC =3.2V, High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection VREG =3.0V TAMB =25oC, Frequency=1850MHz to 1910MHz (unless otherwise specified) 1850 25 28 1910 27 -40 -50 29 34 -48 -60 2:1 Input VSWR Output VSWR MHz dB dBc dBc dBm -46 % dBc POUT =28dBm ACPR @1.25MHz, POUT =28dBm -57 dBc ACPR @2.25MHz, POUT =28dBm 10:1 6:1 Noise Power -141 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Input VSWR Output VSWR 2-274 No damage. No oscillations. >-70dBc At 80MHz offset. Typical Performance at VCC =3.2V, VREG =3.0V TAMB =25oC, Frequency=1850MHz to 1910MHz (unless otherwise specified) 1850 15 16 1910 MHz dB dBc dBc dBm -55 -46 dBc ACPR @1.25MHz, POUT =16dBm -72 2:1 -60 dBc ACPR @1.25MHz, POUT =16dBm 19 -40 -50 20 10:1 6:1 No damage. No oscillations. >-70dBc Rev A0 011016 RF3118 Preliminary Specification Min. Typ. Max. Unit TAMB =25oC DC Supply Supply Voltage Quiescent Current 3.2 3.7 160 50 VREG Current VMODE Current Turn On/Off Time (RF) Total Current (Power Down) VREG “Low” Voltage VREG “High” Voltage VMODE “Low” Voltage VMODE “High” Voltage Rev A0 011016 Condition 0 2.9 0 2.0 3.0 4.2 200 60 8 1 6 10 5 0.5 3.1 0.5 3.0 V mA mA mA mA µs µA µA V V V V VMODE =Low VREG =3.0V, VCC =3.2V VMODE =High, VREG =3.0V, VCC =3.2V 2 POWER AMPLIFIERS Parameter VREG =Low, VMODE =Low 2-275 Pin 1 Function VCC1 2 3 RF IN VREG 2 4 VMODE POWER AMPLIFIERS RF3118 5 VCC2 6 RF OUT 7 GND Pkg Base GND 2-276 Preliminary Description Interface Schematic First stage collector supply. A low frequency decoupling capacitor (e.g., 1µF) is required. RF input internally matched to 50Ω. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V). For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are turned off to improve efficiency. Output stage collector supply. A low frequency decoupling capacitor (e.g., 1µF) is required. RF output internally matched to 50Ω. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Rev A0 011016 RF3118 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 1 7 2 6 C2 4.7 µF 50 Ω µstrip 50 Ω µstrip VREG 3 C4 4.7 µF 4 C3 4.7 µF VMODE Rev A0 011016 2 J6 RF OUT POWER AMPLIFIERS J2 RF IN 5 C2 4.7 µF VCC2 2-277 RF3118 Preliminary Evaluation Board Layout Board Size 1.5” x 1.5” Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” POWER AMPLIFIERS 2 2-278 Rev A0 011016