RF3117 Preliminary 2 3V 900MHZ LINEAR AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handsets • Compatible with Qualcomm Chipset • 3V CDMA2000/1X Cellular Handsets • Spread-Spectrum Systems POWER AMPLIFIERS 2 Product Description The RF3117 is a high-power, high-efficiency linear amplifier module targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band. The RF3117 has a digital control line for low power application to reduce the current drain. The device is self-contained with 50Ω input and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an ultra-small 6mmx6mm land grid array with backside ground. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS 3.000 0.100 0.800 sq typ 1.700 4.390 6.0 sq 2.500 0.100 NOTE: Nominal thickness, 1.55 mm. 0.600 Dimensions in mm. Package Style: LGM (6mmx6mm) Features • Input/Output Internally Matched@50 Ω VCC1 1 7 GND • Single 3V Supply • 30dBm Linear Output Power • 30dB Linear Gain RF IN 2 6 RF OUT • 33% Linear Efficiency • 55mA Idle Current 3 4 5 VCC2 VMODE VREG Ordering Information RF3117 RF3117 PCBA Functional Block Diagram Rev A0 011016 3V 900MHz Linear Amplifier Module Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-269 RF3117 Preliminary Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤31dBm) Control Voltage (VREG) POWER AMPLIFIERS 2 Input RF Power Mode Voltage (VMODE) Operating Case Temperature Storage Temperature Parameter Rating Unit +8.0 +5.2 +4.2 VDC VDC VDC +10 +3.5 -30 to +110 -30 to +150 dBm VDC °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) High Power State (VMODE Low) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency 824 27 29 Adjacent Channel Power Rejection Input VSWR Output VSWR 30 -35 -40 30 849 MHz dB dBc dBc dBm 33 % -46.5 -45.0 dBc VCC =3.2V, POUT =29dBm (room temperature) ACPR @885kHz, POUT =Max POUT -59 1.8:1 -57 dBc ACPR @1980kHz, POUT =Max POUT 10:1 6:1 Noise Power -135 dBm/Hz Low Power State (VMODE High) Frequency Range Linear Gain Second Harmonic Third Harmonic Maximum Linear Output Power (CDMA Modulation) Adjacent Channel Power Rejection Output VSWR 2-270 Condition 824 17.5 16 No damage. No oscillations. >-70dBc At 45MHz offset. Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) 849 MHz dB dBc dBc dBm -52 -44 dBc ACPR @885kHz, POUT =Max POUT -62 -55 10:1 6:1 dBc ACPR @1980kHz, POUT =Max POUT No damage. No oscillations. >-70dBc 21 -35 -40 20 Rev A0 011016 RF3117 Preliminary Specification Min. Typ. Max. Unit Typical Performance at VCC =3.2V, VREG =3V, TAMB =25°C, Frequency=824MHz to 849MHz (unless otherwise specified) FM Mode Frequency Range Gain Second Harmonic Third Harmonic Max CW Output Power Total Efficiency (AMPS mode) 824 849 30 -32 -40 31.5 42 Input VSWR Output VSWR MHz dB dBc dBc dBm % <2:1 10:1 6:1 3.2 3.7 160 55 VREG Current VMODE Current Turn On/Off Time Total Current (Power Down) VREG “Low” Voltage VREG “High” Voltage VMODE “Low” Voltage VMODE “High” Voltage Rev A0 011016 3 0 2.9 0 2.0 3.0 2 POUT =31.5dBm (room temperature) No damage. No oscillations. >-70dBc TAMB =25°C DC Supply Supply Voltage Range Quiescent Current Condition POWER AMPLIFIERS Parameter 4.2 240 65 10 1 <40 V mA mA mA mA µs 10 0.5 3.1 0.5 3.0 µA V V V V VMODE =Low, VREG =3V, VCC =3.2V VMODE =High, VREG =3V, VCC =3.2V VMODE =High VREG switch from Low to High, ICC to within 90% of the final value, POUT within 1dB of the final value VREG =Low, VMODE =Low 2-271 Pin 1 Function VCC1 2 3 RF IN VREG 2 4 VMODE POWER AMPLIFIERS RF3117 5 VCC2 6 RF OUT 7 GND Pkg Base GND 2-272 Preliminary Description Interface Schematic First stage collector supply. A low frequency decoupling capacitor (e.g., 4.7µF) is required. RF input internally matched to 50Ω. This input is internally AC-coupled. Regulated voltage supply for amplifier bias. In Power Down mode, both VREG and VMODE need to be LOW (<0.5V). For nominal operation (High Power Mode), VMODE is set LOW. When set HIGH, devices are turned off to improve efficiency. Output stage collector supply. A low frequency decoupling capacitor (e.g., 4.7µF) is required. RF output internally matched to 50Ω. This output is internally AC-coupled. Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection. The backside of the package should be soldered to a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane. Rev A0 011016 RF3117 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 1 7 2 6 C2 4.7 µF 50 Ω µstrip 50 Ω µstrip VREG 3 C4 4.7 µF 4 C3 4.7 µF VMODE Rev A0 011016 2 J6 RF OUT POWER AMPLIFIERS J2 RF IN 5 C1 4.7 µF VCC2 2-273 RF3117 Preliminary Evaluation Board Layout Board Size 1.5” x 1.5” Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014” POWER AMPLIFIERS 2 2-274 Rev A0 011016