RFMD RF3100-2

RF3100-2
2
3V 900MHZ LINEAR AMPLIFIER MODULE
Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Designed for Compatibility with Qualcomm
Chipsets
2
POWER AMPLIFIERS
• Spread-Spectrum Systems
Product Description
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3V hand-held systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dualmode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, efficiency, and linearity characteristics. The module is an
ultra-small 6mmx6mm land grid array with backside
ground.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
GaAs MESFET
SiGe HBT
Si CMOS
3.000
0.100
0.800 sq
typ
1.700
4.390
6.0 sq
2.500
0.100
NOTE: Nominal thickness, 1.55 mm.
0.600
Dimensions in mm.
Package Style: LGM (6mmx6mm)
Features
• Input/Output Internally Matched@50 Ω
VCC1
1
7
GND
• Single 3V Supply
• 28dBm Linear Output Power
• 29dB Linear Gain
2
VREG
3
4
6
RF OUT
5
VCC2
VMODE
RF IN
• 45mA Idle Current
Ordering Information
RF3100-2
3V 900MHz Linear Amplifier Module
RF3100-2 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
Rev A3 011017
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
2-269
RF3100-2
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (POUT ≤31dBm)
Control Voltage (VREG)
POWER AMPLIFIERS
2
Input RF Power
Mode Voltage (VMODE)
Operating Case Temperature
Storage Temperature
Parameter
Rating
Unit
+8.0
+5.2
+4.2
VDC
VDC
VDC
+10
+3.5
-30 to +110
-30 to +150
dBm
VDC
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
Typical Performance at VCC =3.2V,
VREG =2.85V, TAMB =25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
High Power State
(VMODE Low)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Total Linear Efficiency
824
26
29
-35
-40
849
MHz
dB
dBc
dBc
dBm
35
%
28
Adjacent Channel Power
Rejection
-48
-45
dBc
VCC =3.2V, POUT =28dBm
(room temperature)
ACPR @885kHz, POUT =Max POUT
-57.0
-54.5
<2:1
10:1
6:1
dBc
ACPR @1980kHz, POUT =Max POUT
Input VSWR
Output VSWR
Noise Power
-135
dBm/Hz
Low Power State
(VMODE High)
Frequency Range
Linear Gain
Second Harmonic
Third Harmonic
Maximum Linear Output Power
(CDMA Modulation)
Adjacent Channel Power
Rejection
Input VSWR
Output VSWR
2-270
Condition
824
18
No damage.
No oscillations. >-70dBc
At 45MHz offset.
Typical Performance at VCC =3.2V,
VREG =2.85V, TAMB =25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
849
MHz
dB
dBc
dBc
dBm
-51
-46
dBc
ACPR @885kHz, POUT =Max POUT
-62
-59
2.5:1
10:1
6:1
dBc
ACPR @1980kHz, POUT =Max POUT
21
-35
-40
16
No damage.
No oscillations. >-70dBc
Rev A3 011017
RF3100-2
Specification
Min.
Typ.
Max.
Unit
Typical Performance at VCC =3.2V,
VREG =2.85V, TAMB =25°C,
Frequency=824MHz to 849MHz
(unless otherwise specified)
FM Mode
Frequency Range
Gain
Second Harmonic
Third Harmonic
Max CW Output Power
Total Efficiency (AMPS mode)
824
849
28
-35
-40
31.5
44
Input VSWR
Output VSWR
MHz
dB
dBc
dBc
dBm
%
<2:1
10:1
6:1
3.2
3.7
140
45
VREG Current
VMODE Current
Turn On/Off Time
Total Current (Power Down)
VREG “Low” Voltage
VREG “High” Voltage
VMODE “Low” Voltage
VMODE “High” Voltage
Rev A3 011017
3
0
2.8
0
2.0
2.85
2
VCC =3.7V, VREG =2.85V, POUT =31.5dBm
(room temperature)
No damage.
No oscillations. >-70dBc
TAMB =25°C
DC Supply
Supply Voltage Range
Quiescent Current
Condition
4.2
200
80
10
1
<40
V
mA
mA
mA
mA
µs
5
0.5
2.9
0.5
3.0
µA
V
V
V
V
VMODE =Low, VREG =2.85V
VMODE =High, VREG =2.85V
VMODE =High
VREG switch from Low to High,
ICC to within 90% of the final value,
POUT within 1dB of the final value
VREG =Low, VMODE =Low
2-271
POWER AMPLIFIERS
Parameter
Pin
1
Function
VCC1
2
3
RF IN
VREG
2
4
VMODE
POWER AMPLIFIERS
RF3100-2
5
VCC2
6
RF OUT
7
GND
Pkg
Base
GND
2-272
Description
Interface Schematic
First stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.
RF input internally matched to 50Ω. This input is internally AC-coupled.
Regulated voltage supply for amplifier bias. In Power Down mode, both
VREG and VMODE need to be LOW (<0.5V).
For nominal operation (High Power Mode), VMODE is set LOW. When
set HIGH, devices are turned off to improve efficiency.
Output stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7µF) is required.
RF output internally matched to 50Ω. This output is internally
AC-coupled.
Ground connection. Connect to package base ground. For best performance, keep traces physically short and connect immediately to
ground plane.
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground
plane.
Rev A3 011017
RF3100-2
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC1
1
7
2
6
C2
4.7 µF
50 Ω µstrip
50 Ω µstrip
VREG
3
C4
4.7 µF
4
C3
4.7 µF
VMODE
Rev A3 011017
2
J6
RF OUT
POWER AMPLIFIERS
J2
RF IN
5
C1
4.7 µF
VCC2
2-273
RF3100-2
Evaluation Board Layout
Board Size 1.5” x 1.5”
Board Thickness 0.032”, Board Material FR-4, Multi-Layer, Ground Plane at 0.014”
POWER AMPLIFIERS
2
2-274
Rev A3 011017