SAMHOP STD1224N

S T U/D1224N
S amHop Microelectronics C orp.
Dec 20,2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m Ω) Max
R ugged and reliable.
80 @ V G S = 4.5V
24V
TO-252 and TO-251 P ackage.
12A
130 @ V G S = 2.5V
D
D
G
S
S TU S E R IE S
TO-252AA(D-P AK)
G
D
S
G
S TD S E R IE S
TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter
(T A =25 C unles s otherwis e noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
24
V
Gate-S ource Voltage
V GS
12
V
Drain C urrent-C ontinuous a @ T J =25 C
b
-P ulsed
ID
12
A
IDM
25
A
Drain-S ource Diode Forward C urrent a
IS
10
A
Maximum P ower Dissipation a
PD
50
W
Operating Junction and S torage
Temperature R ange
T J , T S TG
-55 to 150
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
R JC
3
C /W
Thermal R esistance, Junction-to-Ambient
R JA
50
C /W
1
S T U/D1224N
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 18V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 12V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.2
1.8
V
R DS (ON)
V GS =4.5V, ID = 6.0A
60
80
m-ohm
Drain-S ource On-S tate R esistance
V GS =2.5V, ID = 5.2A
90
130
m-ohm
OFF CHAR ACTE R IS TICS
24
V
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = 5V, V GS = 4.5V
0.7
15
A
10
S
528
PF
139
PF
107
PF
13.7
ns
8.9
ns
25.4
ns
14.1
ns
V DS =10V,ID =6A,V GS =10V
14.5
nC
V DS =10V,ID =6A,V GS =4.5V
7.2
nC
V DS =10V, ID = 6A
V GS =10V
1.3
nC
2.1
nC
V DS = 10V, ID = 6.0A
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =8V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DD = 10V
ID = 1A
V GE N = 4.5V
R L = 10 ohm
R GEN = 6 ohm
2
S T U/D1224N
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
1
V GS = 0V, Is =10A
VSD
1.3
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
10
25 C
V G S =10,9,8,7,6,5,4,3V
20
I D , Drain C urrent (A)
ID , Drain C urrent(A)
8
6
V G S =2V
4
2
0
0
2
4
6
8
10
-55 C
T j=125 C
15
10
5
0
0.0
12
0.6
V DS , Drain-to-S ource Voltage (V )
2.2
600
C is s
300
0
C os s
RDS(ON), On-Resistance
(Normalized)
1.8
900
C rs s
0
2
4
6
8
10
1.8
2.4
3.0
3.6
F igure 2. Trans fer C haracteris tics
1500
1200
1.2
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
1.4
1.0
0.6
0.2
0
12
V G S =4.5V
I D =6A
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
V DS =V G S
I D =250uA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
25
50
75
100 125
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
24
20
20
10
Is , S ource-drain current (A)
gF S , T rans conductance (S )
-50 -25
V G S , G ate to S ource V oltage (V )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.8
16
12
8
4
0
V DS =10V
0
5
10
15
20
1
T J =25 C
0
0.4
25
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
40
10
V DS =10V
I D =6A
8
I D , Drain C urrent (A)
V th, Normalized
G ate-S ource T hres hold V oltage
S T U/D1224N
6
4
2
10
0
2
4
6
8
10 12 14 16
) Li
m it
10
11
0.1
DC
0m
ms
s
1s
V G S =4.5V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
(O N
10
0.03
0
R
DS
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T U/D1224N
V DD
ton
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
10%
INVE R TE D
10%
6
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
1.
2.
3.
4.
0.01
S ING LE P ULS E
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t2
R θJ A (t)=r (t) * R θJ A
R θJ A =S ee Datas heet
T J M-T A = P DM* R θJ A (t)
Duty C ycle, D=t1/t2
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10
S T U/D1224N
6
S T U/D1224N
5
95
7
84
L2
9
6.00
35
05
85
0.94
4
3
0
9
36
2.29
9.70
1.425
0.650
0.600
BSC
1
1.625
0.850
REF.
0.090
82
56
6
0.024
6
9
7
30
3
3
41
3
3
5
1
4
BSC
398
0.064
33
REF.
S T U/D1224N
TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
" A"
TO-252 Carrier Tape
UNIT:㎜
PACKAGE
TO-252
(16 ㎜)
A0
6.80
±0.1
B0
K0
10.3
±0.1
2.50
±0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ψ2
ψ1.5
+ 0.1
- 0
16.0
0.3±
1.75
0.1±
7.5
±0.15
8.0
±0.1
4.0
±0.1
2.0
±0.15
0.3
±0.05
TO-252 Reel
S
UNIT:㎜
TAPE SIZE
16 ㎜
REEL SIZE
M
N
W
T
H
ψ 330
ψ330
± 0.5
ψ97
± 1.0
17.0
+ 1.5
- 0
2.2
ψ13.0
+ 0.5
- 0.2
8
K
S
10.6
2.0
±0.5
G
R
V