SAMHOP STS2308A

S T S 2308A
S amHop Microelectronics C orp.
Dec 27 2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
F E AT UR E S
P R ODUC T S UMMAR Y
V DS S
ID
R DS (ON)
S uper high dense cell design for low R DS (ON ).
( m W ) Max
R ugged and reliable.
80 @ V G S = 4.5V
20V
2.7A
S OT-23 package.
110 @ V G S = 2.5V
D
S OT-23
D
G
S
G
S
AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
10
V
P arameter
Drain C urrent-C ontinuous a @ T c=25 C
b
-P ulsed
ID
2.7
A
IDM
10
A
Drain-S ource Diode Forward C urrent a
IS
1.25
A
Maximum P ower Dissipation a
PD
1.25
W
T J , T S TG
-55 to 150
Operating Junction and S torage
Temperature R ange
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
1
100
C /W
S T S 2308A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
Gate-Body Leakage
IGS S
V GS = 10V, V DS = 0V
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
Drain-S ource On-S tate R esistance
R DS (ON)
Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
20
V
1
uA
100
nA
0.8
1.5
V
V GS = 4.5V, ID =2.7A
65
80
m-ohm
V GS = 2.5V, ID= 2A
90
110
m-ohm
ON CHAR ACTE R IS TICS b
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V DS = 5V, V GS = 4.5V
V DS = 5V, ID =2.7A
0.5
6
A
7
S
215
PF
65
PF
45
PF
7.8
ns
5.1
ns
11.6
ns
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
V DS =10V, V GS = 0V
f =1.0MH Z
c
tD(ON)
tr
V DD = 10V,
ID = 1A,
V GS = 4.5V,
R GE N = 6 ohm
Turn-Off Delay Time
tD(OFF)
Fall Time
Total Gate Charge
tf
9.3
ns
Qg
3.8
nC
Gate-S ource Charge
Q gs
1.2
nC
Gate-Drain Charge
Q gd
0.9
nC
V DS =10V, ID = 2.7A,
V GS =4.5V
2
S T S 2308A
E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
Parameter
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
0.84
V GS = 0V, Is =1.25A
VSD
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15
20
V G S =10V
V G S =4.5V
12
V G S =3V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
25 C
V G S =4V
16
12
8
V G S =2V
4
0
0
0.5
1
1.5
2
2.5
-55 C
6
3
0
0.0
3
0.6
2.2
R DS (ON) , On-R es is tance
Normalized
C is s
200
100
1.8
2.4
3.0
3.6
F igure 2. Trans fer C haracteris tics
500
300
1.2
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
400
T j=125 C
9
V DS , Drain-to-S ource Voltage (V )
C , C apacitance (pF )
5
C
Min Typ Max Unit
Condition
S ymbol
C os s
1.8
V G S =4.5V
I D =2.7A
1.4
1.0
0.6
0.2
C rs s
0
0
5
10
15
20
25
0
30
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
25
50
75
100 125
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
25
50
75 100 125
T j, J unction T emperature ( C )
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
12
20
10
10
8
6
4
2
V DS =5V
0
0
0
T j, J unction T emperature ( C )
Is , S ource-drain current (A)
gF S , T rans conductance (S )
-50 -25
V G S , G ate to S ource V oltage (V )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
1.3
3
6
9
12
1
T J =25 C
0
0.4
15
0.8
1.2
1.6
2.0
2.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
5
V DS =4.5V
I D =2.7A
4
I D , Drain C urrent (A)
V th, Normalized
G ate-S ource T hres hold V oltage
S T S 2308A
3
2
1
10
RD
0
0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6
im
it
10
10
1s
0m
ms
s
DC
0.1
V G S =4.5V
S ingle P ulse
T c=25 C
0.1
Qg, T otal G ate C harge (nC )
)L
11
0.03
0
ON
S(
1
10
20
50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S T S 2308A
V DD
ton
5
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
INVE R TE D
10%
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
Thermal Resistance
Normalized Transient
10
1
0.5
0.2
0.1
P DM
0.1
t1
0.05
0.02
0.01
0.00001
on
1.
2.
3.
4.
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
S T S 2308A
A
L
M
F
G
J
B
C
I
H
E
D (TYP.)
F
2.70
3.10
2.40
2.80
0.106
0.094
0.110
1.40
1.60
0.055
0.063
0.35
0.50
0.014
0.020
0
0.10
0
0.004
0.45
0.55
0.022
0.018
0.075 REF.
1.00
0.10
1.30
0.20
0.039
0.004
G
I
1.90 REF.
0.122
0.051
0.008
J
L
0.40
-
0.016
0.45
1.15
0.033
0.045
M
0°
10°
0°
10°
6
-
S T S 2308A
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜
PACKAGE
SOT-23
A0
3.20
±0.10
B0
3.00
±0.10
K0
D0
1.33
±0.10
∮1.00
+0.25
D1
∮1.50
+0.10
E
8.00
+0.30
-0.10
E1
E2
P0
P1
P2
T
1.75
±0.10
3.50
±0.05
4.00
±0.10
4.00
±0.10
2.00
±0.05
0.20
±0.02
SOT-23 Reel
UNIT:㎜
TAPE SIZE
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
8㎜
∮178
∮178
±1
∮60
±1
9.00
±0.5
12.00
±0.5
∮13.5
±0.5
10.5
2.00
±0.5
∮10.0
5.00
18.00
7