ETC 55N03L

55N03L
S eptember , 2002
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
V DS S
ID
R DS (on)
F E AT UR E S
( m W ) TYP
High power and current handling capability.
12.5 @ V G S = 10V
30V
S uper high dense cell design for extremely low R DS (ON).
55A
TO-220 & TO-263 package.
20 @ V G S = 4.5V
D
D
G
G
D
S
S
G
S DP S E R IE S
TO-220
S DB S E R IE S
TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
30
V
Gate-S ource Voltage
V GS
20
V
ID
55
A
IDM
140
A
Drain-S ource Diode Forward C urrent
IS
55
A
Maximum P ower Dissipation @ Tc=25 C
Derate above 25 C
PD
75
0.5
W
W/ C
T J , T S TG
-65 to 175
C
P arameter
Drain C urrent-C ontinuous
-P ulsed
@ TJ=125 C
a
Operating and S torage Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
R JC
2.5
C /W
Thermal R esistance, Junction-to-Ambient
R JA
62.5
C /W
1
55N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
4
Parameter
Min Typ Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 24V, V GS =0V
10
uA
Gate-Body Leakage
IGS S
V GS = 16V, V DS = 0V
100
nA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
1.5
3
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = 10V, ID = 27A
12.5
14
m ohm
V GS = 4.5V, ID = 22A
20
23
m ohm
OFF CHAR ACTE R IS TICS
30
V
ON CHAR ACTE R IS TICS a
ID(ON)
gFS
On-S tate Drain Current
Forward Transconductance
V GS = 10V, V DS = 10V
V DS = 10V, ID = 27A
1
A
60
32
S
930
PF
340
PF
120
PF
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
V DS =15V, V GS = 0V
f =1.0MH Z
b
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
17
16
ns
23
250
ns
37
90
ns
20
200
ns
V DS =15V, ID=27.5A,V GS =10V
26.1
35
nC
V DS =15V, ID=27.5A,V GS =4.5V
13.7 16.5
nC
5.4
nC
4.6
nC
V DD = 15V,
ID = 1A,
V GS = 10V,
R GE N =60 ohm
V DS =15V, ID = 27.5A,
V GS =10V
2
55N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
S ymbol
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Diode Forward Voltage
V GS = 0V, Is =26A
VSD
0.9
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
25
V G S =10,9,8,7,6,5,4V
-55 C
I D , Drain C urrent (A)
ID , Drain C urrent(A)
50
40
30
20
V G S =3V
10
15
10
25 C
5
0
0
0
0.5
1.0
1.5
2.0
2.5
1
3.0
2.2
R DS (ON) , Normalized
Drain-S ource On-R es is tance
C , C apacitance (pF )
2000
1600
1200
C is s
800
C os s
C rs s
0
5
10
15
20
25
3
4
5
6
F igure 2. Trans fer C haracteris tics
2400
0
2
V G S , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
400
T J =125 C
20
1.4
1.0
0.6
0.2
0
30
V G S =10V
I D =27A
1.8
-50
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
F igure 4. On-R es is tance Variation with
Temperature
F igure 3. C apacitance
3
V
4
1.3
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
S DP /B 55N03L
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
50
40
Is , S ource-drain current (A)
gF S , T rans conductance (S )
I D =250uA
1.10
100 125
50
30
20
10
V DS =10V
10
1
0.1
0
0
10
20
30
0.4
40
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
300
200
V DS =15V
I D =27.5A
8
100
I D , Drain C urrent (A)
V G S , G ate to S ource V oltage (V )
1.15
6
4
2
0
R
4
8
12
16
20
24
Qg, T otal G ate C harge (nC )
it
10
1m
0μ
s
s
10
ms
10
0m
DC s
V G S =10V
S ingle P ulse
T c=25 C
1
0.1
28 32
L im
10
0.5
0
(
DS
)
ON
1
10
30 60
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
4
S DP /B 55N03L
V DD
ton
RL
V IN
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
10%
INVE R TE D
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.01
0.1
1
10
100
t2
R θJ C (t)=r (t) * R θJ C
R θJ C =S ee Datas heet
T J M-T C = P * R θJ C (t)
Duty C ycle, D=t1/t2
1000
S quare Wave P uls e Duration (ms ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
10000