U S 2301 Green Product S amHop Microelectronics C orp. J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S -20V ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 60 @ V G S = -4.5V 80 @ V G S = -2.5V 105 @ V G S = -1.8V -3.4A S OT-23 package. D S OT-23 D G S G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Drain-S ource Voltage V DS -20 V Gate-S ource Voltage V GS 12 V P arameter Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID -3.4 A IDM -12 A Drain-S ource Diode Forward C urrent a IS -1.25 A Maximum P ower Dissipation a PD 1.25 W T J , T S TG -55 to 150 Operating Junction and S torage Temperature R ange C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA marking A01** 1 100 C /W U S 2301 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -16V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 10V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID =-250uA -0.6 -0.85 -1.5 V R DS (ON) V GS = -4.5V, ID = -4.0A 50 60 m-ohm Drain-S ource On-S tate R esistance V GS = -2.5V, ID = -2.0A 70 80 m-ohm V GS =-1.8V, ID = -1.0A 95 105 m-ohm V -20 ON CHAR ACTE R IS TICS b On-S tate Drain Current ID(ON) V DS = -5V, V GS = -4.5V Forward Transconductance g FS V DS = -5V, ID = -5A Input Capacitance C IS S Output Capacitance C OS S V DS = -15V, V GS = 0V f =1.0MH Z DYNAMIC CHAR ACTE R IS TICS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time Fall Time A 5 S c CRSS R everse Transfer Capacitance Turn-On Delay Time -20 926 PF 183 PF 141 PF 13.9 ns 17.6 ns 87.7 53.9 ns ns 11.9 nC 1.96 nC 3.49 nC c tD(ON) tr tD(OFF) tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = -10V, ID = -1A, V GS = -4.5V, R L = 10 ohm R GE N = 6 ohm V DS = -10V, ID = -3A, V GS = -4.5V 2 U S 2301 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =-1.25A VSD -0.795 -1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 10 25 C -55 C 20 8 -I D , Drain C urrent (A) -ID , Drain C urrent(A) -V G S =10.5~2.5V 6 -V G S =1.5V 4 2 0 1 2 3 4 5 T j=125 C 15 10 5 0 0.0 0 6 0.5 -V DS , Drain-to-S ource Voltage (V ) 1200 C is s 900 600 300 C os s C rs s 0 0 5 10 15 20 25 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics R DS (ON) , On-R es is tance(Ohms ) 1500 1 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 5 C Min Typ Max Unit Condition S ymbol 2.2 1.8 V G S =-4.5V I D =-4A 1.4 1.0 0.6 0.2 0 30 -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 3 V V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 gF S , T rans conductance (S ) B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 0 25 50 75 100 125 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 25 50 75 100 125 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 18 20 15 10 12 9 6 3 V DS =-5V 0 0 5 10 15 20 1 T J =25 C 0 0.4 25 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) -I DS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 V DS =-10V I D =-1A 4 -I D , Drain C urrent (A) -V G S , G ate to S ource V oltage (V ) 0 T j, J unction T emperature ( C ) -Is , S ource-drain current (A) V th, Normalized G ate-S ource T hres hold V oltage U S 2301 3 2 1 10 R 0 2 4 6 8 10 12 14 16 L im it 10 11 0.1 0m ms s 1s DC V G S =-4.5V S ingle P ulse T c=25 C 0.1 Qg, T otal G ate C harge (nC ) N) 10 0.03 0 (O DS 1 10 20 50 -V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 U S 2301 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 U S 2301 A M F G L J B C I H E D (TYP.) F 3/81 4/21 3/51 3/91 1/217 1/1:5 1/221 2/51 2/71 1/166 1/174 1/46 1/61 1/125 1/131 1 1/21 1 1/115 1/56 1/66 1/133 1/129 1/186!SFG/ 2/11 1/21 2/41 1/31 1/14: 1/115 1/51 . 1/127 1/156 21± 2/:1!SFG/ G I J L 1/56 2/26 1/144 M 1± 21± 1± 6 1/233 1/162 1/119 . U S 2301 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT-23 A0 B0 K0 D0 D1 E 8.00 +0.30 -0.10 E1 E2 P0 P1 P2 T 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.20 ²0.02 1.33 ²0.10 О1.00 +0.25 REEL SIZE M N W W1 H K S G R V О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 5.00 18.00 3.20 ²0.10 3.00 ²0.10 О1.50 +0.10 SOT-23 Reel UNIT:р TAPE SIZE 8р 7