2SA1859/1859A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A) V(BR)CEO IC=–10mA –180min –150min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A 60typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 30typ pF Tstg RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 20 –1 –10 5 –100 100 0.5typ 1.0typ 0.5typ –2 0 –4 –6 –8 0 –2 –10 Collector-Emitter Voltage V C E (V) –5 –10 –50 –100 (V C E =–4V) 300 DC Cur rent Gain h FE 125˚C Typ 100 –1 25˚C 100 –30˚C 50 –0.01 –2 mp) –0.5 f T – I E Characteristics (Typical) –1 θ j-a – t Characteristics –0.1 –0.5 –1 –2 7 5 1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 20 –5 nk Collector Cur rent I C (A) si Collector-Emitter Voltage V C E (V) 10 at 2 –50 –100 –200 he –10 ite 1 –5 fin –0.01 –1 Without Heatsink Natural Cooling 1.2SA1859 2.2SA1859A In –0.5 ith –0.1 W 2 s 1 s Emitter Current I E (A) 0.5 0m 0.1 C –0.5 20 0.05 ms 40 10 60 0 0.01 D –1 Typ 1m 10 80 M aximum Po wer Dissipat io n P C (W) 100 Cut -off Fre quen cy f T ( MH Z ) DC Curr ent Gain h F E 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 300 –0.5 0 –500 –1000 (V C E =–4V) –0.1 eTe –1A Base Current I B (mA) h FE – I C Characteristics (Typical) 50 –0.01 Cas I C =–2A –0.5A θ j - a (˚ C/W) 0 –1 –1 ˚C ( I B =–5mA –2 125 –1 (V C E =–4V) –2 –3 Transient Thermal Resistance –3 –10 mA I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) A 0m A A m 0m 00 –6 –1 Collector Current I C (A) –1 2.4±0.2 Weight : Approx 6.5g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 5mA 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 VCC (V) –2 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 4.0±0.2 3.9 IB ø3.3±0.2 a b p) A µA aseTem –2 V –10max –30˚C (C IC –180 –150 VEB=–6V p) IEBO 0.8±0.2 VCB= V eTem V –6 4.2±0.2 2.8 c0.5 (Cas –180 VEBO 10.1±0.2 µA –10max ICBO 25˚C –150 V External Dimensions FM20(TO220F) Unit 8.4±0.2 VCEO –180 2SA1859 2SA1859A Conditions 16.9±0.3 –150 Symbol 13.0min VCBO Unit (Ta=25°C) ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol 2SA1859 2SA1859A Application : Audio Output Driver and TV Velocity-modulation 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 33