SANKEN 2SA1859A

2SA1859/1859A
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4883/A)
V(BR)CEO
IC=–10mA
–180min
–150min
60 to 240
V
–1
A
hFE
VCE=–10V, IC=–0.7A
PC
20(Tc=25°C)
W
VCE(sat)
IC=–0.7A, IB=–70mA
–1.0max
V
Tj
150
°C
fT
VCE=–12V, IE=0.7A
60typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
30typ
pF
Tstg
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–20
20
–1
–10
5
–100
100
0.5typ
1.0typ
0.5typ
–2
0
–4
–6
–8
0
–2
–10
Collector-Emitter Voltage V C E (V)
–5
–10
–50 –100
(V C E =–4V)
300
DC Cur rent Gain h FE
125˚C
Typ
100
–1
25˚C
100
–30˚C
50
–0.01
–2
mp)
–0.5
f T – I E Characteristics (Typical)
–1
θ j-a – t Characteristics
–0.1
–0.5
–1
–2
7
5
1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
20
–5
nk
Collector Cur rent I C (A)
si
Collector-Emitter Voltage V C E (V)
10
at
2
–50 –100 –200
he
–10
ite
1
–5
fin
–0.01
–1
Without Heatsink
Natural Cooling
1.2SA1859
2.2SA1859A
In
–0.5
ith
–0.1
W
2
s
1
s
Emitter Current I E (A)
0.5
0m
0.1
C
–0.5
20
0.05
ms
40
10
60
0
0.01
D
–1
Typ
1m
10
80
M aximum Po wer Dissipat io n P C (W)
100
Cut -off Fre quen cy f T ( MH Z )
DC Curr ent Gain h F E
0
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
300
–0.5
0
–500 –1000
(V C E =–4V)
–0.1
eTe
–1A
Base Current I B (mA)
h FE – I C Characteristics (Typical)
50
–0.01
Cas
I C =–2A
–0.5A
θ j - a (˚ C/W)
0
–1
–1
˚C (
I B =–5mA
–2
125
–1
(V C E =–4V)
–2
–3
Transient Thermal Resistance
–3
–10 mA
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
A
0m
A
A
m
0m
00
–6
–1
Collector Current I C (A)
–1
2.4±0.2
Weight : Approx 6.5g
a. Type No.
b. Lot No.
B C E
V CE ( sat ) – I B Characteristics (Typical)
5mA
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.2±0.2
VCC
(V)
–2
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
4.0±0.2
3.9
IB
ø3.3±0.2
a
b
p)
A
µA
aseTem
–2
V
–10max
–30˚C (C
IC
–180
–150
VEB=–6V
p)
IEBO
0.8±0.2
VCB=
V
eTem
V
–6
4.2±0.2
2.8 c0.5
(Cas
–180
VEBO
10.1±0.2
µA
–10max
ICBO
25˚C
–150
V
External Dimensions FM20(TO220F)
Unit
8.4±0.2
VCEO
–180
2SA1859 2SA1859A
Conditions
16.9±0.3
–150
Symbol
13.0min
VCBO
Unit
(Ta=25°C)
±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol 2SA1859 2SA1859A
Application : Audio Output Driver and TV Velocity-modulation
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
33