SANKEN 2SA1294

2SA1294
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)
ICBO
VCB=–230V
–100max
µA
V
IEBO
VEB=–5V
–100max
µA
IC=–25mA
–230min
V
–5
V
V(BR)CEO
IC
–15
A
hFE
VCE=–4V, IC=–5A
50min∗
IB
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–2.0max
V
PC
130(Tc=25°C)
W
fT
VCE=–12V, IE=2A
35typ
MHz
Tj
150
°C
COB
VCB=–10V, f=1MHz
500typ
pF
–55 to +150
°C
∗hFE Rank O(50 to 100), Y(70 to 140)
19.9±0.3
VEBO
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
–10
5
–500
500
0.35typ
1.50typ
0.30typ
I B =–20mA
0
0
–1
–2
–3
–1
–5A
0
–4
0
Collector-Emitter Voltage V C E (V)
–0.5
–1.0
–1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
200
200
–0.5
–1
25˚C
100
–30˚C
50
10
–0.02
–5 –10 –15
Transient Thermal Resistance
DC C urrent G ain h FE
Typ
50
Collector Current I C (A)
–0.1
–0.5
–1
–5
–10 –15
0.5
0.1
1
10
s
he
at
si
nk
Collector Curr ent I C (A)
ite
Without Heatsink
Natural Cooling
fin
–0.5
In
–1
100
ith
DC
–5
W
Ma ximum Po we r Dissipa ti on P C (W)
m
50
–0.1
0
0.02
0.1
1
Emitter Current I E (A)
10
–0.05
–3
1000 2000
P c – T a Derating
–10
20
100
Time t(ms)
130
10
p
mp)
1
–40
Ty
–2.5
3
Safe Operating Area (Single Pulse)
60
–2
θ j-a – t Characteristics
(V C E =–12V)
40
–1
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut-o ff F requ ency f T (MH Z )
DC C urrent G ain h FE
125˚C
–0.1
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
10
–0.02
0
–2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
100
–5
I C =–10A
eTe
–50mA
Cas
–5
–10
mp
)
emp
)
–1 00 mA
–2
(V C E =–4V)
eTe
A
mA
200
–15
Cas
–
0m
– 3
˚C (
–30
–10
1.4
E
I C – V BE Temperature Characteristics (Typical)
125
mA
5.45±0.1
C
V CE ( sat ) – I B Characteristics (Typical)
θ j- a ( ˚ C/W)
00
0.65 +0.2
-0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Collector Current I C (A)
A
–5
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (sa t) (V )
–3
.0A
–2
.0
A
.0
–1
2
3
B
IC
(A)
5A
ø3.2±0.1
5.45±0.1
RL
(Ω)
.
–1
2.0±0.1
1.05 +0.2
-0.1
VCC
(V)
–15
4.8±0.2
b
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
seT
Tstg
15.6±0.4
9.6
1.8
V
5.0±0.2
Unit
(Ca
–230
2SA1294
˚C (
VCEO
Conditions
–30
–230
External Dimensions MT-100(TO3P)
(Ta=25°C)
Symbol
2.0
VCBO
■Electrical Characteristics
4.0
Unit
25˚C
2SA1294
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20.0min
LAPT
Without Heatsink
–10
–100
Collector-Emitter Voltage V C E (V)
–300
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
15