SANKEN 2SC4138

2SC4138
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
100max
µA
V
IEBO
VEB=10V
100max
µA
10
V
V(BR)CEO
IC=25mA
400min
V
10(Pulse20)
A
hFE
VCE=4V, IC=6A
10 to 30
IC=6A, IB=1.2A
0.5max
4
A
VCE(sat)
PC
80(Tc=25°C)
W
VBE(sat)
IC=6A, IB=1.2A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.7A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
85typ
pF
V
5.45±0.1
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
33.3
6
10
–5
0.6
–1.2
1max
3max
0.5max
0
0
1
2
3
0.1
0.5
1
5
t on •t stg • t f – I C Characteristics (Typical)
10
25˚C
–55˚C
10
0.5
1
5
10
5
t s tg
V C C 200V
I C :I B 1 :–I B2 =10:1:2
1
0.5
t on
tf
0.1
0.1
0.5
s
0µ
5
10
0.3
50
100
Collector-Emitter Voltage V C E (V)
500
Collect or Cur ren t I C (A)
)
emp
mp)
e Te
nk
10
40
si
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
60
at
500
(Cas
P c – T a Derating
he
100
1
0.1
5
1000
ite
50
Collector-Emitter Voltage V C E (V)
5
0.5
100
fin
0.1
10
10
In
Without Heatsink
Natural Cooling
5
1
ith
0.5
)
0.5
W
1
1.2
80
10
5
1.0
Time t(ms)
s
10
0.8
1
Ma xim um Powe r Dissipat io n P C (W)
10
0.6
3
30
30
Collect or Curr ent I C (A)
1
0.4
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
1m
0.2
Collector Current I C (A)
Collector Current I C (A)
90
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
125˚C
Switching Ti me
DC C urrent G ain h FE
100
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
mp
0
10
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
Te
V C E (sat)
0.05
Collector-Emitter Voltage V C E (V)
50
se
2
0
0.02
4
4
–55˚C
I B =100m A
2
6
se T
200m A
4
V B E (sat)
(Ca
400mA
6
8
1
˚C
600 mA
125
Collector Current I C (A)
8
(V C E =4V)
10
Collector Current I C (A)
1A
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
θ j- a ( ˚ C/ W)
A
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E (s a t) (V )
1.2
C
Weight : Approx 2.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
1.4
0.65 +0.2
-0.1
5.45±0.1
B
VCC
(V)
I C – V CE Characteristics (Typical)
2
3
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
10
ø3.2±0.1
b
IB
Tstg
a
2.0±0.1
(Ca
VEBO
4.8±0.2
25˚C
400
19.9±0.3
VCEO
15.6±0.4
9.6
1.8
VCB=500V
V
5.0±0.2
ICBO
500
2.0
Unit
VCBO
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0
Symbol
2SC4138
Unit
IC
■Electrical Characteristics
Conditions
2SC4138
4.0max
Symbol
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
20
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150