2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1A, IB=0.2A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.25A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 35typ pF Tstg External Dimensions FM20(TO220F) Unit 3.9 V 1.35±0.15 1.35±0.15 1 250 0m 300mA Collector Current I C (A) 200 mA 150 mA 2 100m A 1 0 I B =40mA 0 1 2 3 4max 0.7max tf (µs) 0.5max 1.0 V B E (sat) 0.5 0.1 0.5 1 0 5 7 5 t o n• t s t g• t f (µ s) –55˚C 10 1 3 t s tg V C C 250V I C :I B 1 :I B2 =1:0.15:–0.45 1 tf 0.5 t on 0.1 0.2 0.5 µs 1 3 0.5 0.3 P c – T a Derating 0.05 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 500 1000 0.01 50 100 500 Collector-Emitter Voltage V C E (V) 2SC4517A 1000 nk 0.1 20 si Co lle ctor Cu rre nt I C (A) 1 0.5 at Ma xim um Powe r Dissipat io n P C (W) 5 he 100 1000 ite 50 Collector-Emitter Voltage V C E (V) 100 30 2SC4517 10 10 fin Without Heatsink Natural Cooling 5 1 In 0.1 112 1 ith 1 1.0 Time t(ms) s 0.5 0.8 W Collector Curr ent I C (A) 0µ 0.6 4 10 50 0.01 2 0.4 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 10 0.2 Collector Current I C (A) Collector Current I C (A) 0.05 Transient Thermal Resistance 25˚C Sw it ching Time DC C urrent G ain h FE 125˚C 5 0 Base-Emittor Voltage V B E (V) t on •t stg • t f – I C Characteristics (Typical) 50 0.5 1 V C E (sat) (V C E =4V) 0.1 2 Collector Current I C (A) h FE – I C Temperature Characteristics (Typical) 0.05 (V C E =4V) 3 I C /I B =5 Const. Collector-Emitter Voltage V C E (V) 5 0.02 I C – V BE Temperature Characteristics (Typical) 1.5 0 0.03 0.05 4 Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) A Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 40 tstg (µs) ton (µs) –0.45 0.15 I C – V CE Characteristics (Typical) 3 IB2 (A) IB1 (A) –5 10 2.4±0.2 2.2±0.2 Collector Current I C (A) 250 VBB2 (V) VBB1 (V) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 θ j - a ( ˚ C/W) IC (A) RL (Ω) ø3.3±0.2 a b ■Typical Switching Characteristics (Common Emitter) VCC (V) 4.2±0.2 2.8 c0.5 0.8±0.2 1000 2SC4517 2SC4517A 4.0±0.2 Conditions ±0.2 Symbol Unit 8.4±0.2 900 VCBO (Ta=25°C) 16.9±0.3 Symbol 2SC4517 2SC4517A Application : Switching Regulator and General Purpose ■Electrical Characteristics (Ta=25°C) 13.0min ■Absolute maximum ratings 10 Without Heatsink 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150