2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose ■Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) 600 V ICBO VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 6(Pulse12) A hFE 1max mA 100max µA IC=25mA 500min V VCE=4V, IC=2A 10 to 30 10.2±0.2 16.0±0.7 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 8typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 45typ pF 2.5 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 100 2 10 –5 0.2 –0.4 1max 4.5max 0.5max 1 0 0 1 2 3 12 5˚ Collector-Emitter Voltage V C E (V) 0.05 0.1 –5 0.5 1 5˚ t on •t stg • t f – I C Characteristics (Typical) –55˚C 10 1 5 6 1 0.5 t on tf 0.1 0.2 0.5 5 6 mp) ) 0.3 1 ) e Te (Cas 10 100 1000 P c – T a Derating nk Collector Curren t I C (A) si Collector-Emitter Voltage V C E (V) 500 600 at 100 he 0.02 50 30 ite 500 600 fin 0.1 Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% In 0.5 40 ith 1 0.05 0.05 Collector-Emitter Voltage V C E (V) emp 0.5 W Without Heatsink Natural Cooling 100 1.4 50 s ms C 0.5 50 1. 2 Time t(ms) 5 1 10 1.0 10 s 1m 10 D Collect or Curr ent I C (A) 0µ 0.8 1 M aximum Power Dissipa ti on P C (W) 10 0.6 θ j-a – t Characteristics 20 5 70 1 0.4 4 Reverse Bias Safe Operating Area 20 10 0.2 Collector Current I C (A) Safe Operating Area (Single Pulse) 0.02 7 t s tg V C C 200V I C :I B 1 :I B2 = 10:1:–2 Collector Current I C (A) 0.1 Transient Thermal Resistance t on• t s t g • t f (µ s) 25˚C Switching T im e DC Cur rent Gain h F E 125˚C 0.5 0 Base-Emittor Voltage V B E (V) 7 5 50 0.1 mp 0 5 (V C E =4V) 0.05 Te 1 C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 2 C V C E (sat) 0 0.02 4 p) ase Tem 125˚C (C 3 –55˚C I B =100mA p) –55˚C (Case Tem Temp) 25˚C (Case se 2 1 se T 200mA 4 (Ca 3 V B E (sat) ˚C 300mA 125 400 mA 4 5 Collector Current I C (A) 60 0m A (V CE =4V) 6 2 θ j - a (˚ C/W) Collector Current I C (A) 5 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C as 2 5 e Te m p) ˚C 80 0m A 1.4 Weight : Approx 2.6g a. Type No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (sa t) (V ) 1A 2.5 B C E VCC (V) 6 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 2.0±0.1 b (Ca Tstg V 4.8±0.2 ø3.75±0.2 a 25˚C IC Unit 3.0±0.2 VCBO VEBO 2SC3830 Conditions 8.8±0.2 Symbol Unit 4.0max ■Electrical Characteristics 2SC3830 12.0min Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150