SANKEN 2SC4296

2SC4296
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
µA
400min
V
hFE
VCE=4V, IC=6A
10 to 30
23.0±0.3
100max
IC=25mA
IB
4
A
VCE(sat)
IC=6A, IB=1.2A
0.5max
PC
75(Tc=25°C)
W
VBE(sat)
IC=6A, IB=1.2A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.7A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
85typ
pF
3.3
3.0
V
1.75
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
33
6
10
–5
0.6
–1.2
1max
3max
0.5max
1.4
I B = 100mA
2
0
0
1
2
3
0.1
0.5
1
5
0
10
t on •t stg • t f – I C Characteristics (Typical)
10
25˚C
–55˚C
10
0.1
0.5
1
5
10
5
t s tg
V C C 200V
I C :I B 1 :–I B2 =10:1:2
1
0.5
t on
tf
0.1
0.1
0.5
0µ
5
10
0.5
0.3
P c – T a Derating
100
Collector-Emitter Voltage V C E (V)
500
nk
50
si
10
40
at
0.02
5
he
Collector-Emitter Voltage V C E (V)
500
ite
0.02
fin
0.1
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
60
In
1
0.5
0.05
100
1000
ith
0.05
50
100
80
5
Without Heatsink
Natural Cooling
10
10
Time t(ms)
10
s
1
5
1
µs
s
0.5
0.1
1.2
W
5
m
10
Collect or Cur re nt I C (A)
10
s
1.0
1
Ma xim um Powe r Dissipat io n P C (W)
50
1m
0.8
3
30
10
0.6
θ j-a – t Characteristics
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
30
Collect or Cur ren t I C (A)
1
0.4
Collector Current I C (A)
Collector Current I C (A)
94
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
125˚C
Sw it ching Time
DC C urrent G ain h FE
100
0.2
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
0
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
)
V C E (sat)
0.05
Collector-Emitter Voltage V C E (V)
50
4
2
0
0.02
4
6
mp
V B E (sat)
Te
200m A
4
8
1
se
400mA
6
(V CE =4V)
10
(Ca
600 mA
E
˚C
Collector Current I C (A)
8
C
Weight : Approx 6.5g
a. Type No.
b. Lot No.
125
1A
Collector Current I C (A)
A
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
θ j - a (˚C/W)
1.2
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V )
10
4.4
B
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
)
Tstg
ø3.3±0.2
a
b
emp
A
VEB=10V
V(BR)CEO
3.45 ±0.2
mp)
10(Pulse20)
IC
IEBO
5.5±0.2
e Te
V
15.6±0.2
(Cas
V
10
µA
–55˚C
400
VEBO
100max
0.8±0.2
VCEO
VCB=500V
5.5
ICBO
1.6
V
Unit
se T
500
2SC4296
(Ca
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Symbol
25˚C
Unit
16.2
2SC4296
Symbol
9.5±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
20
3.5
0
Without Heatsink
0
50
100
Ambient Temperature Ta(˚C)
150