2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=0.7A, IB=0.14A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.3A 6typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 40typ Tstg 10.2±0.2 0.65 +0.2 -0.1 VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 250 357 0.7 10 –5 0.1 –0.35 1max 5max 1max 60mA I B =20mA 0 0 1 2 3 V B E (sat) 0.1 Collector-Emitter Voltage V C E (V) 0.5 1 0 5 t on •t stg • t f – I C Characteristics (Typical) 6 5 t o n• t s t g• t f (µ s) 50 25˚C –30˚C Switching Ti me 10 5 0.5 1 3 t s tg VCC 250V IC:IB1:– IB2=2:0.3:1 Const. 1 tf 0.5 t on 0.2 0.1 0.5 5 0.3 P c – T a Derating Collector-Emitter Voltage V C E (V) 1000 Collecto r Cur rent I C (A) nk 500 si 100 30 at 0.1 50 Without Heatsink Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 40 he Collector-Emitter Voltage V C E (V) 1000 1000 2000 50 1 0.5 100 ite 500 10 fin Without Heatsink Natural Cooling 100 1 In 0.5 1.2 ith 1 1.0 W s 0.8 Time t(ms) 5 0µ 0.6 0.5 10 10 Collecto r Cur rent I C (A) 3 1 Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0.1 50 1 5 Collector Current I C (A) Collector Current I C (A) 10 0.4 θ j-a – t Characteristics Ma xim um Powe r Dissipat io n P C (W) DC C urrent G ain h FE 125˚C 0.1 0.2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.05 0 Collector Current I C (A) h FE – I C Characteristics (Typical) 2 0.02 mp) V C E (sat) 0 0.03 0.05 4 1 θ j- a ( ˚ C/ W) 1 1 e Te 100mA 2 (Cas 140mA 125˚C 200 mA 2 (V C E =4V) 3 Transient Thermal Resistance Collector Current I C (A) 300m A I C – V BE Temperature Characteristics (Typical) (I C /I B =5) 2 Collector Current I C (A) 40 0m A 1.4 Weight : Approx 2.6g a. Type No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) 5 2.5 B C E IC (A) A 1.35 2.5 RL (Ω) m 00 b pF VCC (V) I C – V CE Characteristics (Typical) 2.0±0.1 ø3.75±0.2 a V ■Typical Switching Characteristics (Common Emitter) 3 4.8±0.2 3.0±0.2 V IEBO 100max mp) ase Tem p) VCEO 800 VCB=800V –30˚C (C ICBO Unit ase Te V 2SC4020 25˚C (C 900 External Dimensions MT-25(TO220) (Ta=25°C) Conditions 16.0±0.7 VCBO Symbol 8.8±0.2 Unit 4.0max ■Electrical Characteristics (Ta=25°C) 2SC4020 Symbol 12.0min ■Absolute maximum ratings Application : Switching Regulator and General Purpose 20 10 2 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 83