SANKEN 2SC3832

2SC3832
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C)
External Dimensions MT-25(TO220)
2SC3832
Unit
ICBO
VCB=500V
100max
µA
VEB=10V
100max
µA
IC=25mA
400min
V
VCE=4V, IC=3A
10 to 30
IB
2
A
VCE(sat)
IC=3A, IB=0.6A
0.5max
PC
50(Tc=25°C)
W
VBE(sat)
IC=3A, IB=0.6A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–0.5A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
V
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
66.7
3
10
–5
0.3
–0.6
1max
3max
0.5max
0
1
2
3
12
0.05
Collector-Emitter Voltage V C E (V)
t on • t s t g• t f ( µ s)
25˚C
–30 ˚C
Sw it ching Time
10
1
1
5
7
1
t on
tf
0.1
0.2
0.5
1
5
0µ
1
0.5
0.3
1
10
P c – T a Derating
100
Collector-Emitter Voltage V C E (V)
500
Collector Curren t I C (A)
nk
50
si
10
30
at
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
40
he
0.1
5
1000
ite
Collector-Emitter Voltage V C E (V)
500
100
fin
100
)
θ j-a – t Characteristics
In
0.1
1
0.5
1.2
ith
Without Heatsink
Natural Cooling
1.0
W
1
0.8
50
10
s
0.6
Time t(ms)
5
50
0.4
4
Reverse Bias Safe Operating Area
5
10
0.2
Collector Current I C (A)
10
5
0
Base-Emittor Voltage V B E (V)
20
0.5
p)
0
5 7
t s tg
0.5
20
10
Tem
C
V C C 200V
I C :I B1 :–I B 2 =10:1:2
Safe Operating Area (Single Pulse)
Collect or Curr ent I C (A)
0.5
5
Collector Current I C (A)
72
0.1
5˚
M aximum Power Dissipa ti on P C (W)
DC Cur rent Gain h F E
125˚ C
0.5
–5
10
50
0.1
5
t on •t stg • t f – I C Characteristics (Typical)
(V C E =4V)
0.05
2
˚C
Collector Current I C (A)
h FE – I C Characteristics (Typical)
5
0.02
)
Temp
V C E (sat)
0
0.02
4
(Case
˚C
125˚C
4
se
mp)
e Te
25˚C (Cas
(Ca
e Temp)
–55˚C (Cas
θ j - a (˚ C/W)
0
1
125
I B =100mA
2
Collector Current I C (A)
200mA
6
V B E (sat)
Transient Thermal Resistance
4
(V C E =4V)
7
as
e
2 5 Tem
p)
˚C
300mA
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
(C
80
400mA
1.4
Weight : Approx 2.6g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V )
Base-Emitter Saturation Voltage V B E(s a t) (V )
0m
A
Collector Current I C (A)
6
2.5
B C E
RL
(Ω)
60 0m A
3.0±0.2
2.5
VCC
(V)
7
1.35
0.65 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
b
mp)
Tstg
ø3.75±0.2
a
e Te
hFE
(Cas
V(BR)CEO
A
–55˚C
V
7(Pulse14)
2.0±0.1
emp
V
10
4.8±0.2
se T
400
VEBO
10.2±0.2
(Ca
VCEO
IEBO
IC
(Ta=25°C)
Conditions
25˚C
V
Symbol
16.0±0.7
500
VCBO
■Electrical Characteristics
8.8±0.2
Unit
4.0max
2SC3832
12.0min
Symbol
20
10
2
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150