2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose ■Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) 2SC3832 Unit ICBO VCB=500V 100max µA VEB=10V 100max µA IC=25mA 400min V VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 50typ pF V IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 200 66.7 3 10 –5 0.3 –0.6 1max 3max 0.5max 0 1 2 3 12 0.05 Collector-Emitter Voltage V C E (V) t on • t s t g• t f ( µ s) 25˚C –30 ˚C Sw it ching Time 10 1 1 5 7 1 t on tf 0.1 0.2 0.5 1 5 0µ 1 0.5 0.3 1 10 P c – T a Derating 100 Collector-Emitter Voltage V C E (V) 500 Collector Curren t I C (A) nk 50 si 10 30 at Without Heatsink Natural Cooling L=3mH –IB2=1A Duty:less than 1% 40 he 0.1 5 1000 ite Collector-Emitter Voltage V C E (V) 500 100 fin 100 ) θ j-a – t Characteristics In 0.1 1 0.5 1.2 ith Without Heatsink Natural Cooling 1.0 W 1 0.8 50 10 s 0.6 Time t(ms) 5 50 0.4 4 Reverse Bias Safe Operating Area 5 10 0.2 Collector Current I C (A) 10 5 0 Base-Emittor Voltage V B E (V) 20 0.5 p) 0 5 7 t s tg 0.5 20 10 Tem C V C C 200V I C :I B1 :–I B 2 =10:1:2 Safe Operating Area (Single Pulse) Collect or Curr ent I C (A) 0.5 5 Collector Current I C (A) 72 0.1 5˚ M aximum Power Dissipa ti on P C (W) DC Cur rent Gain h F E 125˚ C 0.5 –5 10 50 0.1 5 t on •t stg • t f – I C Characteristics (Typical) (V C E =4V) 0.05 2 ˚C Collector Current I C (A) h FE – I C Characteristics (Typical) 5 0.02 ) Temp V C E (sat) 0 0.02 4 (Case ˚C 125˚C 4 se mp) e Te 25˚C (Cas (Ca e Temp) –55˚C (Cas θ j - a (˚ C/W) 0 1 125 I B =100mA 2 Collector Current I C (A) 200mA 6 V B E (sat) Transient Thermal Resistance 4 (V C E =4V) 7 as e 2 5 Tem p) ˚C 300mA I C – V BE Temperature Characteristics (Typical) (I C /I B =5) (C 80 400mA 1.4 Weight : Approx 2.6g a. Type No. b. Lot No. V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E(s a t) (V ) 0m A Collector Current I C (A) 6 2.5 B C E RL (Ω) 60 0m A 3.0±0.2 2.5 VCC (V) 7 1.35 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) b mp) Tstg ø3.75±0.2 a e Te hFE (Cas V(BR)CEO A –55˚C V 7(Pulse14) 2.0±0.1 emp V 10 4.8±0.2 se T 400 VEBO 10.2±0.2 (Ca VCEO IEBO IC (Ta=25°C) Conditions 25˚C V Symbol 16.0±0.7 500 VCBO ■Electrical Characteristics 8.8±0.2 Unit 4.0max 2SC3832 12.0min Symbol 20 10 2 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150