2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A 0.7max IC=3A, IB=0.6A 1.3max V 16.9±0.3 100max V 30(Tc=25°C) W VBE(sat) Tj 150 °C fT VCE=12V, IE=–0.5A 10typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 55typ pF 3.9 PC Tstg –5 200m A 3 2 I B =50m A 1 0 1 2 3 I C / I B =5 Const. 6 0.5 125˚C (Case Temp) 25˚C (Case Temp) 0 0.02 4 0.05 0.1 0.5 1 5 0 10 1 5 7 t s tg 1 0.5 tf t on 0.1 0.05 V C C 200V I C :I B1 :I B 2 =5:1:–2 0.02 0.2 0.5 5 1 0.5 0.3 1 10 P c – T a Derating 5 ite he at si nk Co lle ctor Cu rren t I C ( A) fin Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% 20 In Without Heatsink Natural Cooling 1 ith Ma xim um Powe r Dissipat io n P C (W) 10 0.5 1000 30 s 1 100 Time t(ms) W Collector Cur rent I C (A) 0µ 5 0.5 1 4 20 20 1.0 θ j-a – t Characteristics Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 10 0.5 Collector Current I C (A) Collector Current I C (A) 10 0 Base-Emittor Voltage V B E (V) Transient Thermal Resistance t o n• t s t g• t f (µ s) Sw it ching Time DC C urrent G ain h FE 25˚C –30˚C 0.5 2 10 t on •t stg • t f – I C Characteristics (Typical) 2 125˚C 0.1 3 Collector Current I C (A) (V C E =4V) 0.05 4 1 h FE – I C Temperature Characteristics (Typical) 5 0.02 5 –30˚C (Case Temp) Collector-Emitter Voltage V C E (V) 50 (V C E =4V) 7 1.0 p) 4 I C – V BE Temperature Characteristics (Typical) Tem 300 mA 0 0.15max se 40 0m A 5 2max 0.5max (Ca 60 0m A 6 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 800mA 1A 2.4±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I C Characteristics (Typical) I C – V CE Characteristics (Typical) 7 –1.2 0.6 tf (µs) ˚C 10 tstg (µs) ton (µs) 125 3 67 IB2 (A) IB1 (A) Collector Current I C (A) 200 VBB2 (V) VBB1 (V) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 θ j- a ( ˚ C/W) IC (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b ) IC VEB=7V IC=25mA Temp V(BR)CEO 4.2±0.2 2.8 c0.5 (Case IEBO V 10.1±0.2 4.0±0.2 V 7 µA 0.8±0.2 400 VEBO 100max –30˚C VCEO VCB=600V mp) ICBO e Te V Unit (Cas 600 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit 8.4±0.2 ■Electrical Characteristics Ratings Symbol 13.0min ■Absolute maximum ratings (Ta=25°C) 10 Without Heatsink 2 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0.1 10 50 100 Collector-Emitter Voltage V C E (V) 500 700 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 115