2SC4418 Application : Switching Regulator and General Purpose µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A 20typ MHz °C COB VCB=10V, f=1MHz 30typ pF Tstg –55 to +150 3.9 V 0.15 1A Collector Current I C (A) 4 60 0m A 400 mA 3 200 mA 2 100 mA I B =50mA 1 0 0 1 2 2.5max 0.5max 3 –55˚C (Case Temp) 2 25˚C (Case Temp) 125˚C (Case Temp) V B E (sat) 1 –55˚C (Case Temp) Temp) 25˚C (Case p) ase Tem (C C 5˚ 12 0.05 Collector-Emitter Voltage V C E (V) 0.1 0.5 1 0 5 1 5 5 V C C 200V I C :I B1 :I B2 =10:1:–2 1 tf t on 0.1 0.1 0.5 1 3 1 0.5 0.4 m s 0µ 50 s 1000 P c – T a Derating 30 10 µs 5 s si nk Without Heatsink Natural Cooling L=3mH IB2=–0.5A Duty:less than 1% at 0.1 0.05 he Without Heatsink Natural Cooling ite 0.1 0.5 20 fin 0.5 1 In 1 ith M aximum Power Dissipa ti on P C ( W) 10 10 100 W DC 1m 10 Reverse Bias Safe Operating Area Collect or Cur re nt I C (A) 5 1 Time t(ms) 20 20 1.6 5 Collector Current I C (A) Safe Operating Area (Single Pulse) Collector Cur rent I C (A) t s tg 0.5 Collector Current I C (A) 0.05 Transient Thermal Resistance 5 10 1.0 θ j-a – t Characteristics θ j - a (˚C /W) t o n• t s t g• t f (µ s) Sw it ching Time DC C urrent G ain h FE 10 0.5 0 Base-Emittor Voltage V B E (V) 8 Typ 0.1 2 t on •t stg • t f – I C Characteristics (Typical) 100 0.05 3 1 (V C E =4V) 2 0.01 4 Collector Current I C (A) h FE – I C Characteristics (Typical) 50 (V CE =4V) 5 V C E (sat) 0 0.01 4 I C – V BE Temperature Characteristics (Typical) (I C /I B =5) as 1.4 A 2.4±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. B C E (C A Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.8 1max –0.3 tf (µs) tstg (µs) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V CE Characteristics (Typical) 5 ton (µs) IB2 (A) 5˚C –5 10 1.5 IB1 (A) 12 133 200 VBB2 (V) VBB1 (V) IC (A) 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 Collector Current I C (A) RL (Ω) 1.35±0.15 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b eT em Tem p) Cas p e Te ) mp) A se 5(Pulse10) IC ˚C ( V Ca V 10 4.2±0.2 2.8 c0.5 –55 400 VEBO C( VCEO 10.1±0.2 25˚ ICBO 4.0±0.2 Unit 100max V 0.8±0.2 2SC4418 VCB=500V Unit 500 16.9±0.3 Conditions Symbol 2SC4418 VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 ■Electrical Characteristics 13.0min ■Absolute maximum ratings (Ta=25°C) 8.4±0.2 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) 10 Without Heatsink 2 0.01 2 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0.01 5 10 50 100 Collector-Emitter Voltage V C E (V) 500 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 103