SANKEN 2SC4140

2SC4140
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Unit
VCB=500V
100max
µA
VCEO
400
V
IEBO
VEB=10V
100max
µA
10
V
V(BR)CEO
V
18(Pulse36)
A
hFE
IC=25mA
400min
VCE=4V, IC=10A
10 to 30
6
A
VCE(sat)
IC=10A, IB=2A
0.5max
PC
130(Tc=25°C)
W
VBE(sat)
IC=10A, IB=2A
1.3max
V
Tj
150
°C
fT
VCE=12V, IE=–2.0A
10typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
165typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
20
10
10
–5
1
–2
1max
3max
0.5max
0
1
2
3
12
5˚
0.5
1
5
–55˚C
10
5
10 18
5
1
0.5
t on
tf
0.1
0.2
0.5
10
s
0µ
10
18
0.1
1
10
mp)
e Te
(Cas
100
1000
P c – T a Derating
130
50
100
Collector-Emitter Voltage V C E (V)
500
nk
10
si
0.03
5
at
500
he
0.1
0.05
ite
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
fin
1
0.5
100
In
Collector Curr ent I C (A)
5
ith
Without Heatsink
Natural Cooling
Collector-Emitter Voltage V C E (V)
mp)
mp
Te
0.5
W
1
0.5
100
1.2
Time t(ms)
10
50
1.0
s
5
10
0.8
1
Ma xim um Powe r Dissipat io n P C (W)
1m
ms
DC
10
Collector Cur rent I C (A)
5
0.6
θ j-a – t Characteristics
50
10
92
1
0.4
2
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
50
0.2
Collector Current I C (A)
Collector Current I C (A)
0.03
5
t s tg
V C C 200V
I C :I B 1 :–I B2 =10:1:2
Transient Thermal Resistance
t o n• t s t g• t f (µ s)
Sw it ching Time
DC C urrent G ain h FE
25˚C
1
0
Base-Emittor Voltage V B E (V)
10
0.5
)
0
10 18
t on •t stg • t f – I C Characteristics (Typical)
125˚C
0.1
se
–
(V C E =4V)
50
e Te
C
˚
55
Collector Current I C (A)
h FE – I C Characteristics (Typical)
0.05
(Ca
4
C
V C E (sat)
Collector-Emitter Voltage V C E (V)
5
0.02
8
(Cas
)
Temp
˚C
(Case
0
0.02 0.05 0.1
4
Collector Current I C (A)
125˚C
θ j - a (˚C /W)
0
e Temp)
25˚C (Cas
12
–55˚C
I B =100mA
Temp)
–55˚C (Case
eT
em
p)
25
˚C
200mA
4
V B E (sat)
1
as
400m A
8
16
(C
600mA
(V C E =4V)
18
125
Collector-Emitter Saturation Voltage V C E (s a t) (V )
Base-Emitter Saturation Voltage V B E (s at) (V)
Collector Current I C (A)
12
1.4
E
I C – V BE Temperature Characteristics (Typical)
(I C /I B =5)
1.4
800 mA
C
Weight : Approx 6.0g
a. Type No.
b. Lot No.
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
1.2 A
0.65 +0.2
-0.1
5.45±0.1
B
IC
(A)
16
2
3
5.45±0.1
RL
(Ω)
1 .6 A
ø3.2±0.1
1.05 +0.2
-0.1
VCC
(V)
18
2.0±0.1
V
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
b
IB
Tstg
15.6±0.4
9.6
25˚C
IC
4.0
VEBO
Symbol
1.8
2SC4140
ICBO
5.0±0.2
Conditions
V
2.0
Unit
500
19.9±0.3
2SC4140
VCBO
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
4.0max
■Electrical Characteristics
20.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
50
3.5
0
Without Heatsink
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150