SANKEN 2SD1796

2SD1796
Built-in Avalanche Diode
for Surge Absorbing
Darlington
Silicon NPN Triple Diffused Planar Transistor
4
A
hFE
mA
60±10
VCE=4V, IC=3A
2000min
V
0.5
A
VCE(sat)
IC=3A, IB=10mA
1.5max
V
PC
25(Tc=25°C)
W
fT
VCE=12V, IE=–0.2A
60typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
45 typ
pF
–55 to +150
°C
13.0min
IB
1.35±0.15
1.35±0.15
A
0 .6 m A
3
0. 5m A
0.4 mA
2
1
0
0.3mA
1
0
2
3
(V CE =2V)
3
4
2
I C=
I C= 2 A
I C =1 A
1
0
0.2
4
0.5
Collector-Emitter Voltage V C E (V)
4A
I C= 3 A
1
5
10
50
0
100
(V C E =4V)
20000
0
1
Typ
5000
1000
500
100
10000
5000
125
˚C
˚C
25
0˚C
–3
1000
500
100
50
1
50
0.05
4
0.1
0.5
Collector Current I C (A)
1
4
5
1
V C B =10V
I E =–2V
0.5
1
10
100
1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
θ j-a – t Characteristics
Transient Thermal Resistance
DC Cur rent åGain h FE
10000
0.5
1
h FE – I C Temperature Characteristics (Typical)
20000
0.1
2
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.05
3
Base Current I B (mA)
h FE – I C Characteristics (Typical)
D C Cur r ent åGai n h FE
I C – V BE Temperature Characteristics (Typical)
p)
A
0 .8 m
1.5typ
e Tem
1.0m
4.0typ
B C E
(Cas
=2
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
IB
0m
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
4
1.0typ
–10
10
tstg
(µs)
125˚C
–5
10
ton
(µs)
IB2
(mA)
IB1
(mA)
Collector Current I C (A)
3
2.4±0.2
2.2±0.2
θ j- a ( ˚ C/W)
10
30
VBB2
(V)
VBB1
(V)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
IC
(A)
ø3.3±0.2
a
b
p)
IC
10max
VEB=6V
IC=10mA
4.2±0.2
2.8 c0.5
p)
V(BR)CEO
10.1±0.2
ase Tem
IEBO
V
µA
ase Tem
V
6
10max
25˚C (C
60±10
VEBO
Unit
VCB=50V
–30˚C (C
VCEO
Conditions
4.0±0.2
ICBO
0.8±0.2
V
External Dimensions FM20(TO220F)
(Ta=25°C)
2SD1796
±0.2
Unit
60±10
RL
(Ω)
(3 k Ω)(1 5 0Ω) E
3.9
Symbol
2SD1796
VCC
(V)
B
8.4±0.2
■Electrical Characteristics
VCBO
Tstg
C
Application : Driver for Solenoid, Relay and Motor and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
Symbol
Equivalent
circuit
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =10V)
10
s
m
10
100
s
Typ
60
40
20
s
Collector Cur rent I C (A)
0m
80
DC
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
1m
10
5
Ma xim um Powe r Dissipat io n P C (W)
120
Cut- off F req uency f T (M H Z )
30
1
0.5
Without Heatsink
Natural Cooling
0.1
20
W
ith
In
150x150x2
1 00x 1 0
10
0x
2
fin
ite
he
at
si
nk
50x50x2
Without Heatsink
2
0
–0.01
0.05
–0.1
–1
Emitter Current I E (A)
138
–4
3
5
10
50
Collector-Emitter Voltage V C E (V)
100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150