SANKEN 2SD2141

Equivalent circuit
2SD2141
Silicon NPN Triple Diffused Planar Transistor
ICBO
VCEO
380±50
V
IEBO
VEBO
6
V
V(BR)CEO
6(Pulse10)
A
hFE
IC
Symbol
Conditions
VCB=330V
10max
µA
VEB=6V
20max
mA
IC=25mA
330 to 430
V
1500min
VCE=2V, IC=3A
1
A
VCE(sat)
IC=4A, IB=20mA
1.5max
V
PC
35(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
150
°C
COB
VCB=10V, f=1MHz
95typ
pF
–55 to +150
°C
Tstg
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
13.0min
IB
Tj
10.1±0.2
4.0±0.2
V
0.8±0.2
380±50
Unit
3.9
Unit
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
2SD2141
±0.2
■Electrical Characteristics
2SD2141
Symbol
(1.5kΩ)(100Ω) E
8.4±0.2
■Absolute maximum ratings (Ta=25°C)
B
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
16.9±0.3
Built-in Avalanche Diode
for Surge Absorbing
Darlington
C
1.35±0.15
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
2
4
0
6
0.2
Collector-Emitter Voltage V C E (V)
0.5
1
5
10
50
10000
(V C E =2V)
5000
1000
500
100
50
12
5˚
1000
C
25
500
Transient Thermal Resistance
DC Cur rent Gain h F E
Typ
˚C
–5
5˚
C
100
50
0.1
0.5
1
5
20
0.02
10
0.1
1.0
0.5
f T – I E Characteristics (Typical)
)
Temp
2.4
5
10
5
1
0.5
0.1
1
10
Collector Current I C (A)
Collector Current I C (A)
2.0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
10000
10
0.02
1.0
Base-Emittor Voltage V B E (V)
(V C E =2V)
5000
0
Base Current I B (mA)
h FE – I C Characteristics (Typical)
100
1000
Time t(ms)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
40
20
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
10
Emitter Current I E (A)
1
5
0.01
1
5
10
50
100
Collector-Emitter Voltage V C E (V)
M aximum Po wer Dissipation P C (W)
500
nk
0.5
150x150x2
10
si
01
at
0.05
he
0
0.01
ite
0.05
20
fin
Without Heatsink
Natural Cooling
In
0.1
ith
1
0.5
30
W
Collector Curre nt I C (A)
1ms
s
10
C
0m
D
ms
10
5
30
20
10
Typ
Cu t-off Fre quen cy f T (M H Z )
DC Cur rent Gain h F E
0
100 200
p)
25˚
12
0
θ j- a ( ˚C/W)
0
(Case
1A
–30˚C
1
5
p)
I C =7A
5A
3A
em
I B =1 mA
Tem
5
2
eT
2mA
ase
4mA
(V C E =4V)
10
3
A
20m mA
18
as
A
(C
m
5˚C
Collector Current I C (A)
0
15
Collector Current I C (A)
10
I C – V BE Temperature Characteristics (Typical)
V CE ( sat ) – I B Characteristics (Typical)
90mA 60mA
Collector Current I C (A)
120mA
C (C
I C – V CE Characteristics (Typical)
100x100x2
50x50x2
2
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
147