2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=1A, IB=1.5mA 2.0max V °C fT VCE=12V, IE=–0.1A 90typ MHz °C COB VCB=10V, f=1MHz 40typ pF 150 Tstg –55 to +150 4.2±0.2 2.8 c0.5 ø3.3±0.2 a b V IB Tj 10.1±0.2 4.0±0.2 ICBO 0.8±0.2 V ±0.2 Unit 200 Unit 3.9 2SD2016 External Dimensions FM20(TO220F) (Ta=25°C) 2SD2016 8.4±0.2 ■Electrical Characteristics VCBO Symbol (2kΩ) (200Ω) E Application : Igniter, Relay and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B 13.0min Darlington C Equivalent circuit 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 2.4±0.2 2.2±0.2 Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) 0 1 0 2 3 4 0 0.2 1 Collector-Emitter Voltage V C E (V) (V C E =4V) 10000 DC Curr ent Gain h F E 1000 500 125 ˚C Transient Thermal Resistance 5000 5000 C 1000 25˚ 500 ˚C –55 100 50 100 0.5 1 3 10 0.03 0.1 0.5 f T – I E Characteristics (Typical) p) mp) 2 1 3 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) Collector Current I C (A) ase Tem 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 10000 0.1 0 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 Ma xim um Powe r Dissipat io n P C (W) 80 Cut- off F req uency f T ( MH Z ) DC Cur rent Gain h FE 0 3 Base Current I B (mA) h FE – I C Characteristics (Typical) 50 0.03 1 12 5˚C –55˚C (C 25˚C e Te –5 5˚C 1 (Cas 1 p) A 25˚C .3m 2 Tem I B= 0 2 se A (Ca 0.5m 2 (V CE =4V) 3 3 ˚C 1mA 125 1.5 mA θ j - a ( ˚ C/W) Collector Current I C (A) 3m A Collector-Emitter Saturation Voltage V C E (s at) (V ) 3 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) I C – V CE Characteristics (Typical) 60 40 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 Without Heatsink 2 0 –0.01 –0.05 –0.1 –0.5 Emitter Current I E (A) –1 –3 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 141