Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C fT VCE=12V, IE=–2A 70typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 120typ pF 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 4 10 10 –5 10 –10 0.8typ 4.0typ 1.2typ 5 0 I B =0.3mA 0 2 4 I C =.15A I C =.10A 1 I C =.5A 0 0.2 6 0.5 1 Collector-Emitter Voltage V C E (V) 5 10 50 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 50000 Typ 10000 5000 1000 12 5˚C Transient Thermal Resistance DC Cur r ent Gai n h F E 50000 DC Cur r ent Gai n h F E 0 100 200 10000 5000 25 –30 ˚C ˚C 1000 1 0 1 5 10 15 500 02 0.5 1 f T – I E Characteristics (Typical) 2.2 5 10 15 θ j-a – t Characteristics 3.0 1.0 0.5 0.1 1 10 100 Collector Current I C (A) Collector Current I C (A) 2 Base-Emittor Voltage V B E (V) (V C E =4V) 0.5 5 Base Current I B (mA) h FE – I C Characteristics (Typical) 500 02 10 ) 2 emp 0.5mA (V CE =4V) 15 3 eT Collector Current I C (A) 0. 8m A 10 E Cas 1. 0m A C ˚C ( 1.5 mA 3.35 Weight : Approx 6.5g a. Type No. b. Lot No. 125 A Collector Current I C (A) 2m 0.65 +0.2 -0.1 1.5 I C – V BE Temperature Characteristics (Typical) θ j- a ( ˚ C/ W) 50mA 15 3mA 4.4 B V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) 10mA +0.2 -0.1 5.45±0.1 1.5 VCC (V) 0.8 2.15 1.05 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) I C – V CE Characteristics (Typical) 1.75 mp) Tstg ø3.3±0.2 a b V IB 3.0 IC=30mA VCE=4V, IC=10A mp) hFE e Te V(BR)CEO A (Cas V 15 –30˚C 5 IC 3.3 VEBO 3.45 ±0.2 e Te 150 5.5±0.2 (Cas VCEO 15.6±0.2 25˚C V 0.8±0.2 VCB=150V 150 5.5 ICBO VCBO 1.6 Unit Symbol External Dimensions FM100(TO3PF) (Ta=25°C) 2SD2562 Unit 9.5±0.2 ■Electrical Characteristics Conditions 2SD2562 Symbol E Application : Audio, Series Regulator and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) (7 0Ω ) 16.2 Darlington C B 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 60 nk 160 –10 si Emitter Current I E (A) –5 at –1 he –0.5 ite 0 –0.02 –0.05 –01 60 fin 20 In 40 80 ith Maxim um Power Dissipatio n P C (W) 100 W Cu t-off Fre quen cy f T (M H Z ) 80 40 20 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150