SANKEN 2SD2641

Equivalent circuit
2SD2641
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685)
Unit
V
ICBO
VCB=110V
100max
µA
VCEO
110
V
IEBO
VEB=5V
100max
µA
VEBO
5
IC
6
V
V(BR)CEO
IC=30mA
110min
V
A
hFE
VCE=4V, IC=5A
5000min∗
IB
1
A
VCE(sat)
IC=5A, IB=5mA
2.5max
PC
60(Tc=25°C)
W
VBE(sat)
IC=5A, IB=5mA
3.0max
V
Tj
150
°C
fT
VCE=12V, IE=–2A
60typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
55typ
pF
Tstg
15.6±0.4
9.6
1.8
Ratings
a
4.8±0.2
5.0±0.2
110
E
External Dimensions MT-100(TO3P)
(Ta=25°C)
Conditions
Symbol
2.0
VCBO
■Electrical Characteristics
4.0
Unit
19.9±0.3
Ratings
Symbol
2.0±0.1
ø3.2±0.1
b
V
2
4.0max
■Absolute maximum ratings (Ta=25°C)
(7 0 Ω )
Application : Audio, Series Regulator and General Purpose
20.0min
Darlington
C
B
3
1.05 +0.2
-0.1
0.65 +0.2
-0.1
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
30
6
5
10
–5
5
–5
0.8typ
6.2typ
1.1typ
C
1.4
E
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
I B =0.1mA
0
2
0
4
I C =3A
0
6
0.1
0.5
Collector-Emitter Voltage V C E (V)
1
5
10
50
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
Typ
1000
500
0.5
1
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE
50000
5000
10000
25˚C
5000
–30˚C
1000
500
100
0.01
56
0.1
Collector Current I C (A)
p)
em
eT
as
(C
)
Temp
1
0.5
2
2.5
1
θ j-a – t Characteristics
5
1
0.5
1
56
5
10
50 100
500 1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
80
60
20
Typ
Collector Curre nt I C (A)
nk
160
–6
si
–1
Emitter Current I E (A)
at
–0.1
he
0
–0.02
ite
0.1
fin
Without Heatsink
Natural Cooling
40
In
0.5
ith
s
1
W
0m
s
20
C
10
40
D
m
5
60
Maximu m Power Dissipa tion P C (W)
10
10
Cut-o ff F requ ency f T (MH Z )
DC Curr ent Gain h F E
50000
0.1
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
100
0.01
0
100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
10000
2
(Case
1
–30˚C
2
I C =5A
4
)
0.2mA
2
Temp
4
5˚C
Collector Current I C (A)
0.3 mA
(V CE =4V)
6
3
12
0. 4m A
(Case
A
25˚C
5m
Collector Current I C (A)
0.
θ j - a (˚C /W)
5mA
6
Collector-Emitter Saturation Voltage V C E (s a t) (V )
1m
A
I C – V CE Characteristics (Typical)
5.45±0.1
B
20
Without Heatsink
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150