Equivalent circuit SAH02 2 1 Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode µA IEBO VEB=–10V –10max µA V(BR)CEO IC=–10mA –30min V ICBO VCEO –30 V VEBO –10 V IC –3 A hFE1 VCE=–2V, IC=–1A 100min IB –0.5 A hFE2 VCE=–2V, IC=–0.5A 150min PC 800(Ta=25°C) mW VCE(sat) IC=–0.5A, IB=–20mA –0.3max °C fT VCE=–12V, IE=0.3A 100typ –40 to +125 °C COB VCB=–10V, f=1MHz 45typ pF VR IR=100µA IF=0.5A trr IF=±100mA –3 1.4±0.2 V V 3.6±0.2 6.8max 4.0max 6.3±0.2 0~0.1 1.0±0.3 Weight : Approx 0.23g a. Type No. b. Lot No. 3.0±0.2 9.8±0.3 I C – V CE Characteristics (Typical) –100mA 30 min 0.55 max 1 8.0±0.5 125 VF b 0.25 Tstg a 4 V MHz Tj 2 3 4.32±0.2 Unit –10max V 4.8max SAH02 VCB=–30V Unit –30 2.54±0.25 Conditions SAH02 VCBO Symbol External Dimensions PS Pack (Ta=25°C) 0.3 +0.15 -0.05 ■Electrical Characteristics 0.89±0.15 Symbol 15 typ ns Di ode I F – V F Characteristics –20mA 3 Application : Chopper Regulator 0.75 +0.15 -0.05 ■Absolute maximum ratings (Ta=25°C) 4 I C – V BE Temperature Characteristics (Typical) 3 (V C E =–2V) –3 –1 0 –2 –3 –4 –5 0 –6 0 0.5 Collector-Emitter Voltage V C E (V) 0.8 t stg t on tf 0.2 0 –0.1 –0.5 –1 –3 125˚C 500 25˚C –30˚C 100 –0.01 –0.05 –0.1 –0.5 (I C =–0.5A) (Case Temp ) mp) –30˚C –1.5 –1 –3 100 10 1 0.3 0.001 0.01 0.1 1 10 100 1000 Time t(ms) Safe Operating Area (Single Pulse) V CE (sat) – I B Temperature Characteristics (Typical) –1.0 300 Collector Current I C (A) Collector Current I C (A) –1.5 Transient Thermal Resistance DC Curr ent Gain h FE V C C 12V –I B1 =I B2 =30mA 0.4 –0.5 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 1000 1.0 0.6 0 Base-Emittor Voltage V B E (V) (V C E =–2V) P c – T a Derating 1.0 –5 25˚C –1.0 125˚C –0.5 10 –1 –5 –10 –50 Base Current I B (mA) 162 –100 –300 s s –0.5 –0.1 –0.05 0 –1 m Ma xim um Powe r Dissipat io n P C (W) 100µs 1m –30˚C Collector Curr ent I C (A) t on • t st g• t f ( µ s) ) 0 1.0 Forward Voltage V F (V) t on •t stg •t f – I C Characteristics (Typical) Swit ching Time emp ˚C ( 125 C ˚C 0˚ 25 C θ j- a (˚C /W) 0 5˚ –3 12 Collecto r-Emitte r Satu ration Voltage V C E( s a t ) ( V) –1 Cas 1 eT I B =–3mA –1 –2 e Te –5m A 2 (Cas –5m A 25˚C –2 Collector Current I C (A) –1 0m A Forward Current I F (A) Collector Current I C (A) –15mA –0.03 –3 Without Heatsink Natural Cooling –5 –10 Collector-Emitter Voltage V C E (V) –50 0.5 Glass epoxy substrate (95 x 69 x 1.2mm) Natural Cooling 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125