SANKEN TM1641S-L

TO-220F 16A Triac
TM1641S-L, TM1661S-L
■ Features
External Dimensions
φ 3.3±0.2
)
●Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
●UL approved type available
3.9±0.2 0.8±0.2
●Gate trigger current: IGT=30mA max (MODE , ,
16.9±
0.3
●RMS on-state current: IT(RMS)=16A
4.2±
2.8
10.0±0.2
0.2
C 0.5
8.4±0.2
4.0±0.2
(Unit: mm)
●Repetitive peak off-state voltage: VDRM=400, 600V
a
b
1.35±
0.15
1.35±0.15
+0.2
0.85 – 0.1
2.54
2.54
0.2
2.2±
2.4±
+0.2
0.45 – 0.1
(1). Terminal 1 (T1)
(2). Terminal 2 (T2)
(3). Gate (G)
(1) (2) (3)
0.2
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
■Absolute Maximum Ratings
Parameter
Symbol
Ratings
TM1641S-L
TM1661S-L
Unit
Conditions
Repetitive peak off-state voltage
VDRM
RMS on-state current
IT(RMS)
16
A
Conduction angle 360°, Tc=74°C
Surge on-state current
ITSM
150
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
Peak gate voltage
VGM
10
V
Peak gate current
IGM
2
A
Peak gate power loss
PGM
5
W
Average gate power loss
400
600
V
PG(AV)
0.5
W
Junction temperature
Tj
– 40 to +125
°C
Storage temperature
Tstg
– 40 to +125
°C
Isolation voltage
VISO
1500
Vrms
50Hz Sine wave, RMS, Terminal to Case, 1 min.
■Electrical Characteristics
Parameter
Symbol
Off-state current
IDRM
On-state voltage
VTM
(Tj=25°C, unless otherwise specified)
Ratings
min
typ
max
0.3
2.0
0.1
1.6
0.8
Gate trigger voltage
VGT
Unit
Conditions
mA
VD=VDRM, RGK=∞, Tj=25°C
V
VD=VDRM, RGK=∞, Tj=125°C
Palse test, ITM=20A
0.7
2.0
0.8
2.0
V
VD=6V, RL=10Ω, TC=25°C
Gate trigger current
16
IGT
25
Holding current
Thermal resistance
44
VGD
IH
Rth
–
–
–
–
+
+
+
T2 , G
T2 , G
T2 , G
30
30
30
mA
VD=6V, RL=10Ω, TC=25°C
+
–
–
–
–
+
T2 , G
T2 , G
T2 , G
70
Gate non-trigger voltage
+
+
T2 , G
1.0
12
+
T2 , G
2.0
V
0.2
mA
25
3.0
°C/W
VD=1/2×VDRM, Tj=125°C
VD=6V
Junction to case
TM1641S-L, TM1661S-L
vT – iT Characteristics (max)
IT(RMS) – Ta Ratings
100
24
Ambient temperature Ta (°C)
5
Tj=25°C
1
0.5
0.1
0.5
75
50
25
0
1.0
1.5
2.0
On-state voltage
2.5
3.0
0
3.5
vT ( V )
0.5
1.0
1.5
2.0
2.5
(Typical)
100
75
50
25
1.0
0.8
0.6
0.4
0.2
10
0
–40 –25
20
RMS on-state current IT(RMS) (A)
0
25
50
75
100
IL temperature Characteristics
(Typical)
(Typical)
20
Transient thermal resistance
40
80
60
40
20
50
75
100
Junction temperature Tj (°C)
125
0
–40 –25
0
25
50
75
100
Junction temperature Tj (°C)
(VD =6V RL =10 Ω)
Mode
50
10
5
0
25
50
75
100
125
Transient thermal resistance
Characteristics
120
Latching current IL (mA)
Holding current IH (mA)
60
20
Junction temperature Tj (°C)
100
80
10
1
–40 –25
125
rth (°C/W)
(RG-K =1kΩ)
25
0
Junction temperature Tj (°C)
IH temperature Characteristics
0
4
100
Mode
1.2
Gate trigger voltage VGT (V)
125
0
–40 –25
8
IGT temperature characteristics
(VD =6V RL =10 Ω)
1.4
Full-cycle sinewave
Conduction angle :360°
100
12
RMS on-state current IT(RMS) (A)
VGT temperature characteristics
150
0
θ2
θ1
16
0
3.0
Full-cycle sinewave
Conduction angle
θ=θ1+ θ2 =360°
20
RMS on-state current IT(RMS) (A)
IT(RMS) – Tc Ratings
Case temperature TC (°C)
100
Gate trigger current IGT (mA)
iT (A)
On-state current
10 Tj=125°C
125
Average on-state power PT(AV) (W)
Full-cycle sinewave
Conduction angle : 360°
Self-supporting
Natural cooling
No wind
50
0
IT(RMS) – PT(AV) Characteristics
150
125
100
Junction to
operating
environment
10
Junction to
case
1
0.1
0.1
1
10
102
103
104
105
t, Time (ms)
45