Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier. ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO −80 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.2 –0.1 0.45+0.2 –0.1 (1.27) (1.27) 1 2 3 (3.2) Parameter Collector-base voltage (Emitter open) 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −80 V Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −80 V Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 V − 0.1 µA 220 hFE1 *2 VCE = −10 V, IC = −150 mA 90 hFE2 VCE = −5 V, IC = −500 mA 50 Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V Forward current transfer ratio *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 100 VCB = −10 V, IE = 50 mA, f = 200 MHz 120 VCB = −10 V, IE = 0, f = 1 MHz 11 MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Palse measurement *2: Rank classification Rank Q R hFE1 90 to 155 130 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00004BED 1 2SA0777 IC VCE 1.0 −1.0 Ta = 25°C IB = −10 mA −6 mA −5 mA − 0.6 0.6 −4 mA −3 mA − 0.4 0.4 −2 mA − 0.2 0.2 0 20 40 60 80 100 120 140 160 −2 0 −1 Ta = 75°C 25°C −25°C − 0.01 −100 −100 −1 000 −1 140 120 100 80 60 40 Emitter current IE (mA) 100 Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 160 20 2 Ta = −25°C 75°C − 0.01 −1 −10 −100 50 −6 −8 −10 VCE = −10 V 250 Ta = 75°C 200 25°C 150 −25°C 100 50 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) Cob VCB 10 −4 300 Collector current IC (mA) VCB = −10 V Ta = 25°C 1 −2 hFE IC 25°C fT I E 180 0 Base current IB (mA) IC / IB = 10 −10 Collector current IC (mA) 200 0 ICBO Ta 104 IE = 0 f = 1 MHz Ta = 25°C VCB = −20 V 40 103 ICBO (Ta) ICBO (Ta = 25°C) −10 − 0.2 −10 − 0.1 − 0.001 −1 0 −8 − 0.4 VBE(sat) IC IC / IB = 10 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC − 0.1 −6 − 0.6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10 −4 − 0.8 Forward current transfer ratio hFE 0 −1 mA VCE = −10 V Ta = 25°C −1.0 −9 mA −8 mA −7 mA − 0.8 0.8 0 IC I B −1.2 Collector current IC (A) −1.2 Collector current IC (A) Collector power dissipation PC (W) PC Ta 1.2 30 20 102 10 10 0 −1 −10 −100 Collector-base voltage VCB (V) SJC00004BED 1 0 20 40 60 80 100 120 140 160 180 Ambient temperature Ta (°C) 2SA0777 ICEO Ta 105 Safe operation area −10 VCE = −10 V Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 104 103 102 −1 Single pulse Ta = 25°C t = 10 ms ICP IC t=1s − 0.1 − 0.01 10 1 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJC00004BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL