SANREX TMG25CQ60J

TRIAC(Through Hole / Isolated)
TMG25CQ60J
(Tj=150 )
5.5 ±0.2
4.5 ±0.3
Triac TMG25CQ60J is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
15.5 ±0.3
3.0 ±0.2
Typical Applications
IT(RMS)=25A
High Surge Current
Low Voltage Drop
Lead-Free Package
3.5 ±0.2
2.0 ±0.2
4.0 ±0.2
3.3 ±0.2
2.0 ±0.2
0.9 ±0.2
0.75 ±0.25
1
2
2
1 T1
2 T2
3 Gate
3
5.45 ±0.3
10.9 ±0.5
Identifying Code T25CQ6J
Maximum Ratings
Symbol
VDRM
IT RMS
ITSM
I2t
PGM
PG AV
IGM
VGM
VISO
Tj
Tstg
3
2.0 ±0.2
17.3 ±0.3
26.5 ±0.3
17.4 ±0.5
Features
1
φ3
.2±
0.2
2.5 ±0.3
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
Wave Ovens, Hair Dryers, other control applications
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
Tj=25
Item
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
I2t for fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage R.M.S.
Operating Junction Temperature
Storage Temperature
Mass
Unit mm
unless otherwise specified
Reference
Ratings
600
25
225/250
260
5
0.5
2
10
1500
40
150
40
150
5.6
Tc 108
One cycle, 50Hz/60Hz, Peak value non-repetitive
A.C. 1minute
Unit
V
A
A
A2S
W
W
A
V
V
g
Electrical Characteristics
Symbol
IDRM
VTM
I GT1
I GT1
I GT3
I GT3
V GT1
V GT1
V GT3
V GT3
VGD
dv/dt c
IH
Rth
Item
Repetitive Peak Off-State Current
Peak On-State Voltage
1
2
Gate Trigger Current
3
4
1
2
Gate Trigger Voltage
3
4
Non-Trigger Gate Voltage
Reference
VD=VDRM, Single phase, half wave, Tj 150
IT 35A, Inst. measurement
VD
Holding Current
Thermal Resistance
Junction to case
+
)
Unit
mA
V
mA
V
1.5
Tj 150
Tj 150
1( 30
1.5
1.5
VD 6V RL 10
Critical Rate of Rise of Off-State
Voltage at Commutation
Ratings
Min. Typ. Max.
5
1.4
30
30
1
2VDRM
di/dt c
A/ms VD
2
3VDRM
0.1
V
5
V/ s
35
2( )
−
1.4
3( III
+
)
4( III )
−
mA
/W
TMG25CQ60J
Gate Characteristics
On-State Characteristics(MAX)
1000
VGM(10V)
On-State Peak Current(A)
10
PGM(5W)
PG(AV)
(0.5W)
1
25℃
1+GT1
1−GT1
1−GT3
0.
1
VGD(0.1V)
0.
01
10
100
T
j=25℃
T
j=150℃
100
IGM(2A)
Gate Voltage(V)
100
1000
10
1
0.5
10000
1
1.5
Gate Current(mA)
RMS On-State Current vs
Maximum Power Dissipation
30
π
0
θ=180゜
θ=150゜
2π
θ=120゜
360゜
θ=90゜
θ
:Conduction Angle
20
θ=60゜
15
θ=30゜
10
130
θ=60゜
5
10
20
15
π
0
200
100
50HZ
50
0
1
10
100
Transient Thermal Impedance(℃/W)
Surge On-State Current(A)
250
60HZ
θ=120゜
θ=150゜
θ=180゜
θ
:Conduction Angle
5
10
IGT −Tj(Typical)
1
0.1
0.01
0.1
1
10
VGT −Tj(Typical)
1000
VGT(t℃)
×100(%)
VGT(25℃)
IGT(t℃)
×100(%)
IGT(25℃)
100
I−GT3
(#−)
50
75
100
Junction Temp. Tj(℃)
125
V+GT1(!+)
V−GT1(!−)
V−GT3(#−)
100
I+GT1
(!+)
I−GT1
(!−)
25
25
Time(Sec.)
1000
0
20
Transient Thermal Impedance
10
Time(Cycles)
−25
15
RMS On-State Current(A)
Surge On-State Current Rating
(Non-Repetitive)
150
2π
360゜
100
0
25
θ=90゜
θ
θ
RMS On-State Current(A)
10
−50
4
θ=30゜
110
5
300
3.5
140
120
0
0
3
150
θ
θ
25
2.5
RMS On-State vs
Allowable Case Temperature
Allowable Case Temperature(℃)
Power Dissipation(W)
35
2
On-State Voltage(V)
150
10
−50
−25
0
25
50
75
100
Junction Temp. Tj(℃)
125
150