TRIAC(Through Hole / Isolated) TMG25CQ60J (Tj=150 ) 5.5 ±0.2 4.5 ±0.3 Triac TMG25CQ60J is designed for full wave AC control applications. It can be used as an ON/OFF function or for phase control operation. 15.5 ±0.3 3.0 ±0.2 Typical Applications IT(RMS)=25A High Surge Current Low Voltage Drop Lead-Free Package 3.5 ±0.2 2.0 ±0.2 4.0 ±0.2 3.3 ±0.2 2.0 ±0.2 0.9 ±0.2 0.75 ±0.25 1 2 2 1 T1 2 T2 3 Gate 3 5.45 ±0.3 10.9 ±0.5 Identifying Code T25CQ6J Maximum Ratings Symbol VDRM IT RMS ITSM I2t PGM PG AV IGM VGM VISO Tj Tstg 3 2.0 ±0.2 17.3 ±0.3 26.5 ±0.3 17.4 ±0.5 Features 1 φ3 .2± 0.2 2.5 ±0.3 Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro Wave Ovens, Hair Dryers, other control applications Industrial Use : SMPS, Copier Machines, Motor Controls, Dimmer, SSR, Heater Controls, Vending Machines, other control applications Tj=25 Item Repetitive Peak Off-State Voltage R.M.S. On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage R.M.S. Operating Junction Temperature Storage Temperature Mass Unit mm unless otherwise specified Reference Ratings 600 25 225/250 260 5 0.5 2 10 1500 40 150 40 150 5.6 Tc 108 One cycle, 50Hz/60Hz, Peak value non-repetitive A.C. 1minute Unit V A A A2S W W A V V g Electrical Characteristics Symbol IDRM VTM I GT1 I GT1 I GT3 I GT3 V GT1 V GT1 V GT3 V GT3 VGD dv/dt c IH Rth Item Repetitive Peak Off-State Current Peak On-State Voltage 1 2 Gate Trigger Current 3 4 1 2 Gate Trigger Voltage 3 4 Non-Trigger Gate Voltage Reference VD=VDRM, Single phase, half wave, Tj 150 IT 35A, Inst. measurement VD Holding Current Thermal Resistance Junction to case + ) Unit mA V mA V 1.5 Tj 150 Tj 150 1( 30 1.5 1.5 VD 6V RL 10 Critical Rate of Rise of Off-State Voltage at Commutation Ratings Min. Typ. Max. 5 1.4 30 30 1 2VDRM di/dt c A/ms VD 2 3VDRM 0.1 V 5 V/ s 35 2( ) − 1.4 3( III + ) 4( III ) − mA /W TMG25CQ60J Gate Characteristics On-State Characteristics(MAX) 1000 VGM(10V) On-State Peak Current(A) 10 PGM(5W) PG(AV) (0.5W) 1 25℃ 1+GT1 1−GT1 1−GT3 0. 1 VGD(0.1V) 0. 01 10 100 T j=25℃ T j=150℃ 100 IGM(2A) Gate Voltage(V) 100 1000 10 1 0.5 10000 1 1.5 Gate Current(mA) RMS On-State Current vs Maximum Power Dissipation 30 π 0 θ=180゜ θ=150゜ 2π θ=120゜ 360゜ θ=90゜ θ :Conduction Angle 20 θ=60゜ 15 θ=30゜ 10 130 θ=60゜ 5 10 20 15 π 0 200 100 50HZ 50 0 1 10 100 Transient Thermal Impedance(℃/W) Surge On-State Current(A) 250 60HZ θ=120゜ θ=150゜ θ=180゜ θ :Conduction Angle 5 10 IGT −Tj(Typical) 1 0.1 0.01 0.1 1 10 VGT −Tj(Typical) 1000 VGT(t℃) ×100(%) VGT(25℃) IGT(t℃) ×100(%) IGT(25℃) 100 I−GT3 (#−) 50 75 100 Junction Temp. Tj(℃) 125 V+GT1(!+) V−GT1(!−) V−GT3(#−) 100 I+GT1 (!+) I−GT1 (!−) 25 25 Time(Sec.) 1000 0 20 Transient Thermal Impedance 10 Time(Cycles) −25 15 RMS On-State Current(A) Surge On-State Current Rating (Non-Repetitive) 150 2π 360゜ 100 0 25 θ=90゜ θ θ RMS On-State Current(A) 10 −50 4 θ=30゜ 110 5 300 3.5 140 120 0 0 3 150 θ θ 25 2.5 RMS On-State vs Allowable Case Temperature Allowable Case Temperature(℃) Power Dissipation(W) 35 2 On-State Voltage(V) 150 10 −50 −25 0 25 50 75 100 Junction Temp. Tj(℃) 125 150