2N696 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021) dia. • SCREENING OPTIONS AVAILABLE 5.08 (0.200) typ. 2.54 (0.100) 2 1 APPLICATIONS: 3 • General Purpose Amplifier 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) • Switching Circuits 45° TO–39(TO205AD) METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCER VEBO PD PD TJ , TSTG RθJA RθJC Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case 60V 40V 5V 0.6W 2.0W –65 to +200°C 292°C/W 87.5°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6602 Issue 1 2N696 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCBO(BR)* VCER(BR)* VEBO(BR)* ICBO VCE(sat)* VBE(sat)* Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage hFE DC Current Gain Cob Output Capacitance fT Test Conditions Min. Typ. Max. Unit IC = 100μA IB = 0A 60 V IC = 100mA RBE = 10Ω 40 V IE = 100μA IC = 0 5 V VCB = 30V VBE = 0V 1.0 TC = 150°C 100 IC = 150mA IB = 15mA 1.5 V IC = 150mA IB = 15mA 1.3 V VCE = 10V IC = 150mA 60 - VCB = 10V IE = 0 35 pF 20 f= 1.0 MHz Current Gain Bandwidth VCB = 10V Product f= 20 MHz IC = 50mA 40 μA MHz (*) Pulse test: tp ≤ 300μs , δ ≤ 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6602 Issue 1