2N3019 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 8.89 (0.35) 9.40 (0.37) FEATURES 7.75 (0.305) 8.51 (0.335) • NPN High Voltage Planar Transistor 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • Hermetic TO39 Package • Full Screening Options Available 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD PD Tj Tstg Rjc Rja Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Max Junction Temperature Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 140V 80V 7V 1A 0.8W 4.6mW / °C 5W 28.6mW / °C 200°C –55 to 200°C 16.5°C / W 89.5°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3064 Issue 1 2N3019 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 80 V V(BR)CBO* Collector – Base Breakdown Voltage IC = 100µA IE = 0 140 V V(BR)EBO* Emitter – Base Breakdown Voltage IE = 100µA IC = 0 7 V VCB = 90V IE = 0 VCB = 90V IE = 0 ICBO Collector Cut-off Current 0.01 10 Tamb = 150°C IEBO Emitter Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE* DC Current Gain VBE = 5V IC = 0 0.010 IC = 150mA IB = 15mA 0.20 IC = 500mA IB = 50mA 0.50 IC = 150mA IB = 15mA 1.1 IC = 0.1mA VCE = 10V 50 IC = 10mA VCE = 10V 90 IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 IC = 1A VCE = 10V 15 VCE = 0.5V 40 TC = –55°C IC = 150mA 300 µA µA V V — t* Pulse test tp = 300µs , δ ≤ 1% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz Cobo Output Capacitance VCB = 10V IE = 0 Cibo Input Capacitance VBE = 0.5V hfe Small Signal Current Gain IC = 1mA rb’Cc Collector Base Time Constant IE = 10mA NF Noise Figure IC = 100µA Min. Typ. 400 MHz f = 1.0MHz 12 pF IC = 0 f = 1.0MHz 60 pF VCE = 5V f = 1kHz 400 — VCB = 10V f = 79.8MHz 400 ps VCE = 10V f = 1kHz RS = 1KΩ 100 Max. Unit 80 15 4 db Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3064 Issue 1