BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 5 5 5 5 V IC Collector current ICM Collector current (peak) 12 A IB Base current 150 mA Ptot Total power dissipation at Tcase= 25°C 90 W Tj Maximum junction temperature 200 °C Tstj Storage junction temperature -65 to 200 °C Rth j-mb Thermal resistance, junction to mounting base. 1.94 °C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 8 î Emitter - base voltage (open collector) ï VEBO ï V ï 140 ï 120 í 100 ï 80 ï Collector - base voltage (open emitter) ï VCBO ï Collector - emitter voltage (open base) ì VCEO V A Prelim. 7/93 BDX63 BDX63A BDX63B BDX63C ELECTRICAL CHARACTERISTICS (Tj = 25°C, Parameter unless otherwise stated) Test Conditions Min. ICBO Collector cut-off current ICEO Collector cut-off current IB = 0, VCE = ½VCEOmax IEBO Emitter cut-off current IC = 0, VEB = 5V D.C. current gain (note 1) IE = 0, VCB = ½VCBOmax, Tj = 200°C IC = 3A, VCE = 3V Max. Unit. 0.2 2 IC = 0.5A, VCE = 3V hFE Typ. IE = 0, VCB = VCEOmax mA 0.5 mA 5 mA 2500 1000 IC = 8A, VCE = 3V 2600 VBE Base - emitter voltage (note 1) IC = 3A, VCE = 3V 2.5 V VCEsat Collector - emitter saturation voltage IC = 3A, IB = 12mA 2 V Cc Collector capacitance IE = Ie = 0, VCB = 10V 100 pF fhfe Cut-off frequency IC = 3A, VCE = 3V 100 kHz E(BR) Turn-off breakdown energy with inductive load –IBoff = 0, ICon = 4.5 A 50 mJ tp = 1ms, T = 100ms hFE1/hFE2 D.C. current gain ratio of I = 3A, VCE = 3V complementary matched pairs C ï hfeï VF 2.5 Small signal current gain IC = 3A, VCE = 3V, f = 1MHz 100 Diode, forward voltage IF = 3A 1.2 V Note 1: Measured under pulse conditions , tp < 300ms, d < 2% R1 typ. 8KW R2 typ. 100W Circuit diagram. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/93